STP150N10F7AG
Datasheet
Automotive N-channel 100 V, 4.2 mΩ typ., 110 A, STripFET F7
Power MOSFET in a TO-220 package
TAB
G(1)
Features
Order code
STP150N10F7AG
V
DS
100 V
R
DS(on)
max.
4.2 mΩ
I
D
110 A
TO-220
1
2
3
D(2, TAB)
S(3)
• Designed for automotive application
• Standard level V
GS(TH)
• 175°C junction temperature
• 100% avalanche rated
Applications
• Switching applications
AM01475v1_noZen
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status link
STP150N10F7AG
Product summary
Order code STP150N10F7AG
Marking
Package
Packing
150N10F7AG
TO-220
Tube
DS13798 - Rev 1 - July 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STP150N10F7AG
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Gate-source voltage
Parameter
I
D
(1)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(2)
P
I
E
TOT
AV
AS
Total power dissipation at T
C
= 25 °C
Single pulse avalanche current (pulse width limited by maximum junction temperature)
Single pulse avalanche energy
(T
J
= 25 °C, I
D
= I
AV
, V
DD
= 25 V)
Operating junction temperature range T
J
T stg
Storage temperature range
1. Current limited by package.
2. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol
R thJC
R thJB
(1)
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-board
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
100
±20
110
440
250
30
650
-55 to 175
Unit
V
V
A
A
W
A mJ
°C
Value
0.6
62.5
Unit
°C/W
°C/W
DS13798 - Rev 1 page 2/12
2
STP150N10F7AG
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off-state
Parameter Test conditions
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 250 µA
Zero gate voltage drain current V
GS
= 0 V, V
DS
= max ratings
Gate body leakage current V
DS
= 0 V, V
GS
= ±20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source onresistance
V
GS
= 10 V, I
D
= 55 A
Min.
100
2.5
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 4. Dynamic
Test conditions
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 50 V, I
D
= 110 A, V
GS
= 10 V
(see Figure 13. Test circuit for gate charge behavior
)
Min.
-
-
-
-
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
V
DD
= 50 V, I
D
= 55 A,
R
G
= 4.7 mΩ, V
GS
= 10 V
(see Figure 12. Test circuit for resistive load switching times
and
Figure 16. Unclamped inductive waveform
)
Min.
-
-
-
-
Typ.
Max.
3.5
3.6
Typ.
9000
2000
80
127
56
32
Max.
-
-
-
-
Typ.
37
54
68
33
Max.
-
-
-
-
1
100
4.5
4.2
Unit ns ns ns ns
Unit
V
µA nA
V mΩ
Unit pF pF pF nC nC nC
DS13798 - Rev 1 page 3/12
STP150N10F7AG
Electrical characteristics
Table 6. Source-drain diode
Symbol
V
SD
I t
Q rr rr
(1)
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
= 110 A, V
SD
= 110 A,
Test conditions
GS
= 0 di/dt = 100 A/µs,
V
DD
= 80 V, T j
= 25°C (see
Figure 14. Test circuit for inductive load switching and diode recovery times
)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min.
-
-
-
-
Typ.
60
83
Max.
1.2
-
-
Unit
V ns nC
2.75
A
DS13798 - Rev 1 page 4/12
STP150N10F7AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I D
(A)
Figure 1. Safe operating area
AM18051v1
100
10
DS(on)
in
this area is
Operation
Limited
by max R
1
100 µs
0.1
0.1
1
Tj=175 °C
Tc=25 °C
Single pulse
10 V
DS
(V)
1 ms
10 ms
Figure 3. Typical output characteristics
I
D
(A)
110
100
90
80
70
V
GS
GADG270720211229OCH
= 7, 10 V
60
50
40
30
20
6 V
10
0
V
GS
= 4, 5 V
0 0.5
1 1.5
2 2.5
3 3.5
V
DS
(V)
Figure 5. Typical gate charge characteristics
V
GS
(V)
12
GADG270720210940QVG
V
DS
=50V
I
D
=110A
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 Q g
(nC)
K
Figure 2. Thermal impedance
GADG270720210943ZTH
0.2
0.1
10 -1
0.02
0.05
0.01
Single pulse
Z = k*R
δ = t p thj-c
/ Ƭ t p
10 -2
Ƭ
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Typical transfer characteristics
I
D
(A)
GADG270720210946TCH
T
C
=175°C
200
150
100
T
C
=25°C
50
0
T
C
=-55°C
0 1 2 3 4 5 6 7 V
GS
(V)
Figure 6. Typical drain-source on-resistance
R
DS(on)
(mΩ)
9
8
5
4
7
6
V
GS
GADG270720210945RID
=10V
3
2
1
0
0 20 40 60 80 100 120 140 160 I
D
(A)
DS13798 - Rev 1 page 5/12
STP150N10F7AG
Electrical characteristics (curves)
Figure 7. Typical capacitance characteristics
C
(pF)
GADG270720210942CVR
10 4 C
ISS
10 3
C
OSS
10 2
10 1
0 20 40 60 80 100
C
RSS
V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.0
1.8
GADG270720210943RON
1.6
1.4
1.2
1.0
0.8
0.6
-75 -25 25
V
GS
I
D
= 10 V
= 55 A
75 125 175 T j
(°C)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.15
GADG270720210944VTH
1.05
0.95
0.85
0.75
0.65
0.55
0.45
-75 -25
I
D
= 250 µA
25 75 125 175 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
-75 -25
I
D
= 250 µA
25
GADG270720210944BDV
75 125 175 T j
(°C)
Figure 11. Source-drain diode forward characteristics
V
SD
(V)
1.0
T
J
=-55°C
ADG270720210900MT
T
J
=25°C
0.8
0.6
0.4
T
J
=175°C
0.2
0
0 20 40 60 80 100 120 140 I
SD
(A)
DS13798 - Rev 1 page 6/12
STP150N10F7AG
Test circuits
3
Test circuits
Figure 12. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 13. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 15. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 16. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 17. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS13798 - Rev 1 page 7/12
4
4.1
STP150N10F7AG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220 type A package information
Figure 18. TO-220 type A package outline
DS13798 - Rev 1
0015988_typeA_Rev_23 page 8/12
DS13798 - Rev 1
Dim.
H1
J1
L
L1
L20
L30
øP
Q
Slug flatness
D1
E e e1
F
A b b1 c
D
STP150N10F7AG
TO-220 type A package information
Table 7. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
0.03
3.85
2.95
0.10
Max.
4.60
0.88
1.55
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
page 9/12
Revision history
Date
27-Jul-2021
Version
1
Table 8. Document revision history
Changes
First release
STP150N10F7AG
DS13798 - Rev 1 page 10/12
STP150N10F7AG
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS13798 - Rev 1 page 11/12
STP150N10F7AG
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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DS13798 - Rev 1 page 12/12
