STF110N10F7,
STP110N10F7
N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™
Power MOSFETs in TO-220FP and TO-220 packages
Datasheet - production data
Features
Order codes
VDS
RDS(on) max
100 V
0.007 Ω
STF110N10F7
TAB
STP110N10F7
1
2
3
1
TO-220FP
2
ID
PTOT
45 A
30 W
110 A
150 W
• Ultra low on-resistance
3
• 100% avalanche tested
TO-220
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
These devices utilize the 7th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
'7$%
*
6
$0Y
Table 1. Device summary
Order codes
Marking
STF110N10F7
Package
Packaging
TO-220FP
110N10F7
STP110N10F7
July 2013
This is information on a product in full production.
Tube
TO-220
DocID024058 Rev 2
1/16
www.st.com
16
Contents
STF110N10F7, STP110N10F7
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 9
DocID024058 Rev 2
STF110N10F7, STP110N10F7
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Unit
Parameter
TO-220FP
TO-220
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
ID(1)
Drain current (continuous) at TC = 25 °C
45
110
A
Drain current (continuous) at TC = 100 °C
32
76
A
Drain current (pulsed)
180
415
A
Total dissipation at Tc = 25 °C
30
150
W
ID
(1)
IDM(2)
PTOT
(1)
EAS(3)
Single pulse avalanche energy
TJ
Operating junction temperature
Tstg
Storage temperature
490
mJ
°C
-55 to 175
°C
1. This value is rated according to Rthj-c.
2. Limited by safe operating area.
3. Starting TJ=25 °C, ID=18, VDD=50 V.
Table 3. Thermal resistance
Value
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-amb
DocID024058 Rev 2
Unit
TO-220FP
TO-220
5.00
1.00
62.50
°C/W
°C/W
3/16
Electrical characteristics
2
STF110N10F7, STP110N10F7
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage (VGS= 0)
Max.
Unit
-
V
VDS = 100 V
1
µA
VDS = 100 V; TC=125 °C
10
µA
100
nA
4.5
V
5.1
7
mΩ
Min.
Typ.
Max.
Unit
-
5117
-
pF
-
992
-
pF
-
39
-
pF
-
72
-
nC
-
31
-
nC
-
16
-
nC
Min.
Typ.
Max.
Unit
-
25
-
ns
-
36
-
ns
-
52
-
ns
-
21
-
ns
ID = 250 µA
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
Gate threshold voltage
VDS= VGS, ID = 250 µA
VGS(th)
RDS(on)
Static drain-source onresistance
Min.
Typ.
100
2.5
For TO-220FP:
VGS= 10 V, ID= 22.5 A
For TO-220:
VGS= 10 V, ID= 55 A
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS =50 V, f=1 MHz,
VGS=0
VDD=50 V, ID = 110 A
VGS =10 V
Figure 17
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
4/16
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD=50 V, ID= 55 A,
RG=4.7 Ω, VGS= 10 V
Figure 16
Fall time
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
ISDM(1)
VSD(2)
Parameter
Test conditions
Min
Typ.
Max.
Unit
Source-drain current:
For TO-220FP
-
45
A
For TO-220
-
110
A
Source-drain current (pulsed):
For TO-220FP
-
180
A
For TO-220
-
415
A
-
1.2
V
For TO-220FP:
ISD = 22.5 A, VGS=0
Forward on voltage
For TO-220:
ISD = 55 A, VGS=0
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 110 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150 °C
-
77
ns
-
150
nC
-
4.3
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
DocID024058 Rev 2
5/16
Electrical characteristics
2.1
STF110N10F7, STP110N10F7
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
AM15957v1
ID
(A)
Figure 3. Thermal impedance for TO-220FP
Zth_TOFPDEF
K
δ=0.5
Tj=175°C
Tc=25°C
Single pulse
0.05
0.02
0.01
100
10 -2
s
ai
are n)
his RDS(o
t
n
n i max
tio
ra d by
e
Op ite
Lim
10
100µs
1ms
1
10 -3
Single pulse
10ms
0.1
10
1
0.1
VDS(V)
Figure 4. Safe operating area for TO-220
AM15958v1
ID
(A)
Tj=175°C
Tc=25°C
Single pulse
10 -4
10 -6
10 -5
10 -3
10 -4
10 -2
10 -1 tp(s)
Figure 5. Thermal impedance for TO-220
Zth_280TOL
K
δ=0.5
100
s
ai
are n)
his RDS(o
t
n
n i max
tio
ra d by
e
Op ite
Lim
10
100µs
0.05
0.02
0.01
10 -2
1ms
1
Single pulse
10ms
0.1
10
1
0.1
VDS(V)
Figure 6. Output characteristics
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 tp(s)
Figure 7. Transfer characteristics
AM15948v1
ID (A)
AM15949v1
ID (A)
VGS=8, 9, 10V
350
VDS=2V
300
300
250
7V
250
200
200
6V
150
150
100
100
5V
50
4V
0
0
6/16
1
2
3
4
5
6
7
8
VDS(V)
50
0
0
DocID024058 Rev 2
2
4
6
8
VGS(V)
STF110N10F7, STP110N10F7
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM15950v1
VGS
(V)
VDD=50V
ID=110A
12
Figure 9. Static drain-source on-resistance for
TO-220FP
AM15959v1
RDS(on)
(mΩ)
5.25
10
5.20
8
5.15
6
5.10
4
5.05
2
5.00
VGS=10V
4.95
0
0
40
20
60
80
Qg(nC)
Figure 10. Static drain-source on-resistance for
TO-220
AM15960v1
RDS(on)
(mΩ)
15
25
35
ID(A)
Figure 11. Capacitance variations
AM15952v1
C
(pF)
6000
VGS=10V
5.3
5
Ciss
5000
5.2
4000
3000
5.1
2000
5.0
1000
0
0
4.9
0
20
40
60
80
100
ID(A)
Figure 12. Normalized gate threshold voltage vs
temperature
AM015953v1
VGS(th)
(norm)
Figure 13. Normalized on-resistance vs
temperature
2
1.1
1.8
1
1.6
0.9
1.4
0.8
1.2
0.7
1
0.6
0.8
0.5
0.6
25 50 75 100 125 150
AM15954v1
RDS(on)
(norm)
ID=250µA
1.2
0.4
-75 -50 -25 0
10 20 30 40 50 60 70 80
Coss
Crss
VDS(V)
TJ(°C)
0.4
-75 -50 -25 0
DocID024058 Rev 2
ID=55A
25 50 75 100 125 150 TJ(°C)
7/16
Electrical characteristics
STF110N10F7, STP110N10F7
Figure 14. Normalized BVDSS vs temperature
AM15955v1
V(BR)DSS
(norm)
Figure 15. Source-drain diode forward vs
temperature
AM15956v1
VSD (V)
ID=250µA
TJ=-55°C
1.1
1.04
1
1.02
0.9
1.00
TJ=25°C
0.8
0.98
0.7
TJ=175°C
0.96
0.94
-75 -50 -25 0
8/16
0.6
25 50 75 100 125 150 TJ(°C)
0.5
0
DocID024058 Rev 2
20
40
60
80
100
ISD(A)
STF110N10F7, STP110N10F7
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 19. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID024058 Rev 2
10%
AM01473v1
9/16
Package mechanical data
4
STF110N10F7, STP110N10F7
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Package mechanical data
Table 8. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024058 Rev 2
11/16
Package mechanical data
STF110N10F7, STP110N10F7
Figure 22. TO-220FP drawing
7012510_Rev_K_B
12/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Package mechanical data
Table 9. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID024058 Rev 2
13/16
Package mechanical data
STF110N10F7, STP110N10F7
Figure 23. TO-220 type A drawing
BW\SH$B5HYB7
14/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
03-Dec-2012
1
Initial release.
2
– Part numbers (STF45N10F7 and STH110N10F7-2) have been
moved to two separate datasheets
– Modified: title, IDM value for TO-220
– Added: EAS
– Modified: the entire typical values in Table 5 and 6
– Modified: typical and max values in Table 7
– Modified: Figure 16, 17, 18, 19, Table 9 and Figure 23
– Minor text changes
16-Jul-2013
Changes
DocID024058 Rev 2
15/16
STF110N10F7, STP110N10F7
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