STP7N52DK3
Datasheet
N-channel 525 V, 0.95 Ω typ., 6 A, SuperFREDmesh3™ Power MOSFET in a TO-220 package
TAB
G(1)
TO-220
1
2
3
D(2, TAB)
S(3)
AM01475V1
Features
Order codes
STP7N52DK3
V
DS
525 V
R
DS(on)
max.
1.15 Ω
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
I
D
6 A
P
TOT
90 W
Applications
• Switching applications
Description
This device is developed using the revolutionary N-channel SuperFREDmesh3™ technology. It associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the FDmesh™ advanced technology.
Product status link
STP7N52DK3
Product summary
Order code STP7N52DK3
Marking 7N52DK3
Package
Packing
TO-220 Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STP7N52DK3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Gate-source voltage
Parameter
I
D
I
DM
(1)
P
TOT
I
AR
(2)
E
AS
(3)
dv/dt
(4)
di/dt
(4)
T stg
T
J
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Avalanche current, repetitive or non-repetitive
Single pulse avalanche energy
Peak diode recovery voltage slope
Diode reverse recovery current slope
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Pulse width is limited by T
Jmax
.
3. Starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V
4. I
SD
≤ 6 A, V
DS(peak)
≤ V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1.39
62.5
Obsolete Product(s) - Obsolete Product(s)
24
90
3
110
20
400
Value
525
±30
6
4
-55 to 150
A
W
A mJ
V/ns
A/ns
Unit
V
V
A
A
°C
Unit
°C/W
°C/W
DS12771 - Rev 1 page 2/14
STP7N52DK3
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
I
D
Test conditions
= 1 mA, V
GS
= 0 V
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source onresistance
V
GS
= 0 V, V
DS
= 525 V
V
GS
= 0 V, V
DS
= 525 V, T
C
= 125 °C
(1)
V
V
1. Defined by design, not subject to production test.
GS
V
DS
GS
= ±20 V, V
= V
GS
, I
D
= 10 V, I
D
DS
= 0 V
= 50 µA
= 3 A
Min.
525
3
Typ.
Max.
3.75
0.95
1
50
±10
4.5
1.15
Unit
V
µA
µA
µA
V
Ω
Table 4. Dynamic
Symbol
C iss
C oss
C rss
Parameter
Input capacitance
Output capacitance
Test conditions
V
DS
= 50 V, f = 1 MHz, V
GS
= 0 V
Min.
-
Typ.
870
70
Max.
-
Unit pF
C oss(tr)
(1)
C oss(er)
(2)
Reverse transfer capacitance
Time-related equivalent output capacitance
Energy-related equivalent output capacitance
V
DS
= 0 to 420 V, V
GS
= 0 V
-
-
13
53
74 -
pF pF
Intrinsic gate resistance f = 1 MHz open drain 3.5
Ω R
G
Total gate charge 33 Q g
V
DD
= 420 V, I
D
= 6 A,
Q gs
Gate-source charge V
GS
= 0 to 10 V 5
nC
(see
Figure 15. Test circuit for gate
Q gd
Gate-drain charge
charge behavior
)
19
Obsolete Product(s) - Obsolete Product(s)
1. C oss(tr)
is defined as the constant equivalent capacitance giving the same charging time as C oss
when V to 420 V.
DS
increases from 0
2. C oss(er).
is defined as the constant equivalent capacitance giving the same stored energy as C oss
when V
0 to 420 V.
DS
increases from
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
V
DD
= 260 V, I
D
= 3 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 14. Test circuit for resistive load switching times and
Figure 19. Switching time waveform
)
Min.
-
Typ.
12
12
37
19
Max.
Unit
ns
DS12771 - Rev 1 page 3/14
STP7N52DK3
Electrical characteristics
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 6. Source-drain diode
Test conditions
I
SD
= 6 A, V
GS
= 0 V
I
SD
= 6 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see
Figure 16. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 6 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C
(see
Figure 16. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min.
-
-
-
-
8
140
0.68
10
Typ.
Max.
6
24
1.5
Unit
A
110
0.44
V ns
μC
A ns
μC
A
Symbol
V
(BR)GSO
Table 7. Gate-source Zener diode
Parameter
Gate-source breakdown voltage
Test conditions
I
GS
= ±1 mA, I
D
= 0 A
Min.
30
Typ.
-
Max.
-
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 4/14
STP7N52DK3
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
AM07187v1
10
1
0.1
0.1
O pe is ra tio n in
th ite d
Li m by m are a is
D
S(o ax
R n)
1
10µs
100µs
1ms
10ms
10
Tj=150°C
Tc=25°C
S ingle puls e
100 V DS (V)
Figure 2. Thermal impedance
8
6
4
2
0
0
I D
(A)
14
12
10
Figure 3. Output characteristics
AM07188v1
V GS =10V
7V
5 10 15
6V
20
5V
25 V
DS
(V)
Figure 4. Transfer characteristics
AM07189v1
I
D
(A)
14 V
DS
=20V
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 V
GS
(V)
Obsolete Product(s) - Obsolete Product(s)
V GS
(V)
12
AM07190v1
V
DS
(V)
450
400
Figure 6. Static drain-source on-resistance
R
DS (on)
(Ω)
1.06
1.04
V
GS
=10V
AM07191v1
V
DS
V DD =420V
I
D
=6A
350
1.02
10
300
1.00
8
250
0.98
200
6 0.96
150 0.94
4
100 0.92
2
0
0 10 20 30
50
0
Q g
(nC)
0.90
0.88
0 1 2 3 4 5 6 I
D
(A)
DS12771 - Rev 1 page 5/14
STP7N52DK3
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
AM07192v1
1000 Cis s
100
Cos s
Crs s
10
1
0.1 1 10 100 V DS (V)
Figure 9. Normalized gate threshold voltage vs temperature
AM07194v1 V GS (th)
(norm)
1.10
1.00
0.90
0.80
0.70
-75 -25 25 75 125 T
J
(°C)
Figure 11. Source-drain diode forward characteristics
AM07198v1
(V)
1.0
T
J
=-50°C
0.9
0.8
0.7
T
J
=25°C
0.6
0.5
0.4
0 10 20
T
J
=150°C
30 40 50 I
S D
(A)
Figure 8. Output capacitance stored energy
AM07193v1
E os s (µJ )
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 100 200 300 400 500 V
DS
(V)
Figure 10. Normalized on-resistance vs temperature
AM07195v1
R
DS (on)
(norm)
2.5
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T
J
(°C)
Figure 12. Normalized V
(BR)DSS
vs temperature
AM07196v1
(norm)
1.10
1.05
1.00
0.95
0.90
-75 -25 25 75 125 T
J
(°C)
DS12771 - Rev 1 page 6/14
Figure 13. Maximum avalanche energy vs starting T
J
AM07197v1
E
AS
(mJ )
I
D
=3 A
V DD =50 V 110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 T
J
(°C)
STP7N52DK3
Electrical characteristics (curves)
Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 7/14
STP7N52DK3
Test circuits
3
Test circuits
Figure 14. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 15. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 17. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 18. Unclamped inductive waveform
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 19. Switching time waveform t d(on) t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12771 - Rev 1 page 8/14
4
STP7N52DK3
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 9/14
4.1
TO-220 type A package information
Figure 20. TO-220 type A package outline
STP7N52DK3
TO-220 type A package information
Obsolete Product(s) - Obsolete Product(s)
0015988_typeA_Rev_21 page 10/14 DS12771 - Rev 1
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STP7N52DK3
TO-220 type A package information
Table 8. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 11/14
STP7N52DK3
Revision history
Date
04-Oct-2018 1
Table 9. Document revision history
Version Changes
Initial release. This part number was previously included in datasheet
DS6515.
Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 12/14
STP7N52DK3
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 13/14
STP7N52DK3
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Obsolete Product(s) - Obsolete Product(s)
DS12771 - Rev 1 page 14/14
