TAB
1
3
D
2
PAK
TAB
TO-220
1
2
3
STGB30V60F,
STGP30V60F
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet
-
production data
Features
• Maximum junction temperature: T
J
= 175 °C
• Tail-less switching off
• V
CE(sat)
= 1.85 V (typ.) @ I
C
= 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Figure 1. Internal schematic diagram
C (2, TAB)
Applications
•
Photovoltaic inverters
•
Uninterruptible power supply
•
Welding
•
Power factor correction
•
Very high frequency converters
G (1)
E (3)
Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of
IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V
CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order codes
STGB30V60F
STGP30V60F
Table 1. Device summary
Marking
GB30V60F
GP30V60F
Package
D
2
PAK
TO-220
Packaging
Tape and reel
Tube
April 2014
This is information on a product in full production.
DocID025049 Rev 4 1/19 www.st.com
19
3
4
5
6
1
2
Contents
Contents
STGB30V60F, STGP30V60F
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1
D²PAK, STGB30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-220, STGP30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
CES
I
C
I
C
I
CP
(1)
V
GE
P
TOT
T
STG
T
J
Collector-emitter voltage (V
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
Storage temperature range
GE
= 25 °C
= 0)
Continuous collector current at T
Continuous collector current at T
Operating junction temperature
C
C
= 25 °C
= 100 °C
1.
Pulse width limited by maximum junction temperature.
Value
600
60
30
120
±20
260
- 55 to 150
- 55 to 175
Unit
A
A
V
V
A
W
°C
°C
Symbol
R thJC
R thJA
Table 3. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
0.58
62.5
Unit
°C/W
°C/W
DocID025049 Rev 4 3/19
Electrical characteristics STGB30V60F, STGP30V60F
T
J
= 25 °C unless otherwise specified.
Symbol Parameter
Table 4. Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
(V
GE
= 0)
V
V
CE(sat)
I
I
GE(th)
CES
GES
I
C
= 2 mA
V
GE
= 15 V, I
C
= 30 A
Collector-emitter saturation voltage
Gate threshold voltage
V
GE
= 15 V, I
C
= 30 A
T
J
= 125 °C
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage current (V
CE
= 0)
V
V
CE
GE
= 600 V
= ± 20 V
Min.
Typ.
Max.
Unit
600
1.85
2.3
2.15
5
2.35
6 7
25
V
V
V
µA
250 nA
4/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F Electrical characteristics
Symbol
C ies
C oes
C res
Q
Q
Q g ge gc
Parameter
Table 5. Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CC
= 480 V, I
C
= 30 A,
V
GE
= 15 V, see Figure 22
-
-
-
Min.
Typ.
Max.
Unit
-
-
3750
120
-
pF pF
77
163
28
72
-
-
-
pF nC nC nC
Symbol
Table 6. IGBT switching characteristics (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t d
( off
) Turn-off delay time t f
E on
(1)
E off
(2)
Current fall time
Turn-on switching losses
Turn-off switching losses
E ts t d(on)
Total switching losses
Turn-on delay time
V
CE
= 400 V, I
R
G see
Figure 21
C
= 30 A,
= 10 Ω , V
GE
= 15 V,
-
-
-
-
-
-
-
-
45
16
1500
189
19
383
233
616
42 -
-
-
-
-
-
-
-
ns ns
A/µs ns ns
µJ
µJ
µJ ns t r
(di/dt) on
Current rise time
Turn-on current slope t d
( off
) Turn-off delay time t f
E on
(1)
E off
(2)
Current fall time
Turn-on switching losses
Turn-off switching losses
V
CE
R
G
T
J
= 400 V, I
C
= 10 Ω , V
GE
= 30 A,
= 15 V,
= 175 °C, see
Figure 21
-
-
-
-
-
17
1337
193
32
794
378 -
-
-
-
-
-
E ts
Total switching losses 1172 -
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the copacked
STGW30V60DF.
2.
Turn-off losses include also the tail of the collector current.
ns
A/µs ns ns
µJ
µJ
µJ
DocID025049 Rev 4 5/19
Electrical characteristics STGB30V60F, STGP30V60F
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case temperature
Figure 3. Collector current vs. case temperature
AM17409v1 AM17410v1
P tot
(W)
I
C
(A)
V
GE
=15 V, T
J
= 175 °C
250
60
50
200
40
150
30
100
20
50
0
0 25 50 75 100 125 150 175 T
C
(°C)
10
0
0 25 50 75 100 125 150 175 T
C
(°C)
Figure 4. Output characteristics (T
J
=25°C)
AM17411v1
I
C
(A)
120 V
GE
=15V
13V
Figure 5. Output characteristics (T
J
=175°C)
AM17412v1
I
C
(A)
120 V
GE
=15V
100 11V 100 13V
80 80 11V
60
40
9V
60
40
9V
20
0
0 1 2 3 4 V
CE
(V)
20
0
0 1 2 3 4
7V
V
CE
(V)
Figure 6. V
CE(sat)
vs. junction temperature
AM17413v1
V
CE(sat) (V)
3.2
V
GE
=15V
I
C
=60A
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
-50 0 50 100
I
C
=30A
I
C
=15A
150 T
C
(°C)
Figure 7. V
CE(sat)
vs. collector current
AM17414v1
V
CE(sat)
(V)
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V
GE
=15V
10 20 30 40
T j
=175°C
T j
=25°C
T j
=-40°C
50 60 I
C
(A)
6/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F Electrical characteristics
Figure 8. Normalized V
GE(th)
vs junction temperature
AM17419v1
V
GE(th)
(norm)
V
CE
=V
GE
I
C
=1mA
1.0
Figure 9. Normalized V
(BR)CES
vs. junction temperature
AM17420v1
V
(BR)CES
(norm) I
C
=2mA
1.1
0.9
0.8
1.0
0.7
0.6
-50 0 50 100 150 T
C
(°C)
0.9
-50 0 50 100 150 T
C
(°C)
Figure 10. Capacitance variations
C(pF)
10000
Cies
AM17421v1
Figure 11. Gate charge vs. gate-emitter voltage
AM17422v1
V
GE
(V)
16
V
CC
= 480 V
I
C
= 30 A
14
12
1000
10
8
Coes
6
100
Cres
4
10
0.1
1 10 V
CE
(V)
2
0
0 25 50 75 100 125 150 175 Q g
(nC)
Figure 12. Switching losses vs. collector current
Figure 13. Switching losses vs. gate resistance
Eon
AM17423v1
E(μJ)
AM17424v1
E(μJ)
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
V
CC
=400V, V
GE
=15V
Rg=10Ω, Tj=175°C
10 20 30 40 50 60
Eoff
I
C
(A)
1200
1000
800
600
400
200
0
V
CC
=400V, V
GE
=15V
I
C
=30A, Tj=175°C
10 20 30 40
Eon
Eoff
R g
(Ω)
DocID025049 Rev 4 7/19
Electrical characteristics STGB30V60F, STGP30V60F
Figure 14. Switching losses vs. junction temperature
AM17425v1
E(μJ)
800
V
CC
=400V, V
GE
=15V
I
C
=30A, Rg=10Ω
Eon
700
Figure 15. Switching losses vs. collector emitter voltage
E(μJ)
1100 V
GE
=15V, Tj=175°C
I
C
=30A, Rg=10Ω
Eon
AM17426v1
900
600
500
700
Eoff
400
500
Eoff
300
200
100
0 25 50 75 100 125 150 T
J
(°C)
300
100
150 200 250 300 350 400 450 V
CE
(V)
Figure 16. Switching times vs. collector current Figure 17. Switching times vs. gate resistance
AM17427v1 AM17428v1 t(ns) t(ns)
V
CC
=400V, V
GE
=15V
Tj=175°C, Rg=10Ω 1000 t doff
V
CC
=400V,
Tj=175°C,
V
GE
=15V
I
C
=30A t doff
100 t don t f
100 t don t r t f t r
10
0 10 20 30 40
Figure 19. Safe operating area
R g
(Ω)
AM17416v1
I
C
(A)
10
0 10 20 30 40 50 60 I
C
(A)
Figure 18. Transfer characteristics
I
C
(A)
AM17417v1
Tj=-40°C
100 Tj=175°C
Tj=25°C
80
60
40
20
0
7 8 9 10
V
CE
= 10 V
11 V
GE
(V)
100
10
1
0.1
Single pulse, Tc=25°C
Tj<175°C, V
GE
=15V
0.01
1 10 100
10μs
100μs
1ms
V
CE
(V)
8/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F Electrical characteristics
K
δ
=0.5
Figure 20. Thermal data
ZthTO2T_B
10
-1
0.2
0.1
0.05
0.01
10
-2
10
-5
Single pulse
10
-4
10
-3
0.02
Zth=k Rthj-c
δ
=tp/t
10
-2 tp t
10
-1 t p
(s)
DocID025049 Rev 4 9/19
Test circuits
3 Test circuits
STGB30V60F, STGP30V60F
Figure 21. Test circuit for inductive load switching
Figure 22. Gate charge test circuit
AM01505v1
V
CE
Figure 23. Switching waveform
AM01504v1
V
G
I C
Td(on)
Ton
Tr(Ion)
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
AM01506v1
10/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 24. D²PAK (TO-263) drawing
0079457_T
DocID025049 Rev 4 11/19
Dim.
e e1
H
J1
L
L1
L2
R
V2 c c2
D
D1
E
E1
A
A1 b b2
Package mechanical data STGB30V60F, STGP30V60F
4.88
15
2.49
2.29
1.27
1.30
Table 7. D²PAK (TO-263) mechanical data mm
Typ.
Min.
0.45
1.23
8.95
7.50
10
8.50
4.40
0.03
0.70
1.14
2.54
0.4
0°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
12/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F
Figure 25. D²PAK footprint
(a)
16.90
Package mechanical data
12.20
9.75
3.50
1.60
5.08
Footprint a.
All dimension are in millimeters.
DocID025049 Rev 4 13/19
Package mechanical data STGB30V60F, STGP30V60F
Figure 26. TO-220 type A drawing
14/19 DocID025049 Rev 4
BW\SH$B5HYB7
STGB30V60F, STGP30V60F
Dim.
D
D1
E e e1
F
H1
J1
L
A b b1 c
L1
L20
L30
∅
P
Q
Package mechanical data
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Table 8. TO-220 type A mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
16.40
28.90
3.75
2.65
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
DocID025049 Rev 4 15/19
Packaging mechanical data
5 Packaging mechanical data
T
Top cover tape
Figure 27. Tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
STGB30V60F, STGP30V60F
F
E
W
B1
K0
B0
For machine ref. only including draft and radii concentric around B0
A0 P1
User direction of feed
D1
User direction of feed
R
Bending radius
AM08852v1
16/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F
A
REEL DIMENSIONS
D
B
Figure 28. Reel
40mm min.
Access hole
At slot location
C
Packaging mechanical data
T
N
Dim.
P0
P1
P2
R
T
W
D1
E
F
K0
A0
B0
D
Full radius Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
Min.
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
Table 9. D²PAK (TO-263) tape and reel mechanical data
Tape Reel mm mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Max.
330
13.2
26.4
30.4
1000
1000
DocID025049 Rev 4 17/19
Revision history STGB30V60F, STGP30V60F
Date
26-Jul-2013
29-Jul-2013
08-Oct-2013
08-Apr-2014
Revision
Table 10. Document revision history
Changes
1
2
3
4
Initial release.
Updated Table 3: Thermal data and added
Figure 19: Safe operating area .
Updated title, description and features in cover page.
Updated Table 4: Static characteristics ,
Figure 3: Collector current vs. case temperature ,
Figure 16: Switching times vs. collector current , Figure 18: Transfer characteristics .
18/19 DocID025049 Rev 4
STGB30V60F, STGP30V60F
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