1
2
3
TO-247
TO-247 long leads
G (1)
TAB
E (3)
STGW80H65FB, STGWA80H65FB,
STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet
-
production data
TO-3P
1
2
3
Features
• Maximum junction temperature: T
J
= 175 °C
• High speed switching series
•
Minimized tail current
• V
CE(sat)
= 1.6 V (typ.) @ I
C
= 80 A
• Tight parameter distribution
•
Safe paralleling
• Low thermal resistance
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
•
Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V
CE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code
STGW80H65FB
STGWA80H65FB
STGWT80H65FB
Table 1. Device summary
Marking Package
GW80H65FB
GWA80H65FB
GWT80H65FB
TO-247
TO-247 long leads
TO-3P
Packaging
Tube
Tube
Tube
June 2014
This is information on a product in full production.
DocID026401 Rev 1 1/18 www.st.com
18
3
4
1
2
Contents
Contents
5
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1
TO-247, STGW80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-247 long leads, STGWA80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-3P, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
CES
I
C
I
C
I
CP
(2)
V
GE
P
TOT
T
STG
T
J
Collector-emitter voltage (V
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
Storage temperature range
GE
= 25 °C
= 0)
Continuous collector current at T
Continuous collector current at T
Operating junction temperature
C
C
= 25 °C
= 100 °C
1.
Current level is limited by bond wires.
2.
Pulse width limited by maximum junction temperature.
Value
650
120
(1)
80
240
±20
469
- 55 to 150
- 55 to 175
Symbol
R thJC
R thJA
Table 3. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
0.32
50
Unit
°C/W
°C/W
Unit
A
A
V
V
A
W
°C
°C
DocID026401 Rev 1 3/18
Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
T
J
= 25 °C unless otherwise specified.
Symbol Parameter
Table 4. Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
(V
GE
= 0)
V
V
CE(sat)
I
I
GE(th)
CES
GES
I
C
= 2 mA
V
GE
= 15 V, I
C
= 80 A
Collector-emitter saturation voltage
Gate threshold voltage
V
GE
= 15 V, I
C
= 80 A
T
J
= 125 °C
V
GE
= 15 V, I
C
= 80 A
T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage current (V
CE
= 0)
V
V
CE
GE
= 650 V
= ± 20 V
Min.
Typ.
Max.
Unit
650
5
V
1.6
1.8
2
V
1.9
6 7 V
100 µA
250 nA
Parameter
Table 5. Dynamic characteristics
Test conditions Min.
Typ.
Max.
Unit Symbol
C ies
C oes
C
Q
Q
Q res g ge gc
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CC
V
GE
= 520 V, I
C
= 80 A,
= 15 V, see
Figure 23
-
-
-
-
-
-
10524 -
385 -
215
414
78
170
-
-
-
pF pF pF nC nC nC
4/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Symbol
Table 6. IGBT switching characteristics (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit t d(on) t r
(di/dt) on t d(off) t f
E on
(1)
E off
(2)
E ts t d(on) t r
(di/dt) on t d(off) t f
E on
(1)
E off
(2)
E ts
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CE
= 400 V, I
R
G see
V
CE
R
G
T
J
Figure 22
= 400 V, I
C
= 80 A,
= 10 Ω , V
GE
C
= 10 Ω , V
GE
= 15 V,
= 80 A,
= 15 V,
= 175 °C, see
Figure 22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
84
52
1270
280
31
2.1
1.5
3.6
77
51
1270
328
30
4.4
2.1
6.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80H65DFB
2.
Turn-off losses include also the tail of the collector current.
ns ns
A/µs ns ns mJ mJ mJ ns ns
A/µs ns ns mJ mJ mJ
DocID026401 Rev 1 5/18
Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Figure 2. Output characteristics (T
J
= 25°C)
GIPD130920131606FSR
I
C
(A)
V
GE
=15V
11V
140
120
9V
100
80
60
40
20
0
0 1 2 3 4 V
CE
(V)
Figure 3. Output characteristics (T
J
= 175°C)
GIPD160920130919FSR
I
C
(A)
V
GE
=15V 11V
140
9V
120
100
80
60
40
7V
20
0
0 1 2 3 4 V
CE
(V)
Figure 4. Transfer characteristics
I
C
(A)
140
V
CE
=10V
GIPD160920130924FSR
Figure 5. Collector current vs. case temperature
GIPD160920130941FSR
I
C
(A)
120
V
GE
= 15 V, T
J
= 175 °C
120
25°C
100
100
80
T
J
=175°C
80 -40°C
60
60
40
40
20
20
0
6 7 8 9 10 11 V
GE
(V)
0
0 25 50 75 100 125 150 T
J
(°C)
Figure 6. Power dissipation vs. case temperature
P tot
(W)
450
400
350
300
250
200
150
100
50
0
0 25
GIPD160920130948FSR
V
GE
= 15 V, T
J
= 175 °C
50 75 100 125 150 T
J
(°C)
Figure 7. V
V
CE(sat)
(V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
-50
CE(sat)
0
vs. junction temperature
V
GE
= 15V
50 100
GIPD160920130952FSR
I
C
= 160A
I
C
= 80A
I
C
= 40A
150 T
J
(°C)
6/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Figure 8. V
CE(sat)
vs. collector current
GIPD160920131029FSR
V
CE(sat)
(V)
2.6
V
GE
= 15V
2.4
T
J
= 175°C
2.2
T
J
= 25°C
2
1.8
1.6
1.4
1.2
1
0.8
0 20 40 60
T
J
= -40°C
80 100 120 140 I
C
(A)
Figure 10. Capacitance variations
C
(pF)
Figure 9. Forward bias safe operating area
I
C
(A)
100
10
1
0.1
1
Single pulse
Tc= 25°C, T
J
≤ 175°C
V
GE
= 15V
10 100
GIPD160920131115FSR
10μs
100μs
1ms
V
CE
(V)
GIPD160920131200FSR
Figure 11. Normalized V
(BR)CES
vs. junction temperature
GIPD160920131144FSR
V
(BR)CES
(norm)
1.1
10000 C ies
1000
1
I
C
= 2mA
100
C oes
C res
10
0.1
1 10 100 V
CE
(V)
0.9
-50 0 50 100 150 T
J
(°C)
Figure 12. Normalized V
GE(th)
vs. junction temperature
GIPD160920131151FSR
V
GE
(norm)
1.1
I
C
= 1mA
Figure 13. Gate charge vs. gate-emitter voltage
V
GE
(V)
16
I
C
= 80A
V
CC
= 520V
GIPD160920131156FSR
1
14
12
0.9
10
8
0.8
6
4
0.7
2
0.6
-50 0 50 100 150 T
J
(°C)
0
0 100 200 300 400 Q g
(nC)
DocID026401 Rev 1 7/18
Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Figure 14. Switching loss vs temperature
GIPD160920131504FSR
E
(μJ)
4500
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, R g
= 10Ω
E
ON
4000
Figure 15. Switching loss vs gate resistance
GIPD160920131208FSR
E
(μJ)
5000
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, T
J
= 175°C
3500
3000
2500
E
OFF
2000
1500
1000
0 25 50 75 100 125 150 175 T
J
(°C)
4200
3400
2600
1800
E
ON
E
OFF
1000
2 6 10 14 18 R
G
(Ω)
Figure 16. Switching loss vs collector current Figure 17. Switching loss vs collector emitter voltage
GIPD160920131436FSR GIPD160920131524FSR
E
(μJ)
9000
V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, T
J
= 175°C
E
(μJ)
6000
T
J
= 175°C, V
GE
= 15V
I
C
= 80A, R g
= 10Ω
E
ON
8000 5000
7000
6000
5000
4000
3000
2000
E
ON
E
OFF
4000
3000
2000
E
OFF
1000
0
0 20 40 60 80 100 120 140 I
C
(A)
1000
150 200 250 300 350 400 450 V
CE
(V)
Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
GIPD160920131533FSR GIPD160920131539FSR t
(ns) t doff t
(ns) T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, I
C
= 80A t doff
100 t don t r
10 t f
100 t don t r t f
T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, R g
= 10Ω
1
20 40 60 80 100 120 140 I
C
(A)
10
4 8 12 16 20 R g
(Ω)
8/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Figure 20. Collector current vs. switching frequency
GIPD260520141426FSR
Ic [A]
160
140
120 Tc=100 °C
Tc=80°C
100
80
60 rectangular current shape,
(duty cycle=0.5, V
CC
V
GE
= 0/15 V, T
J
=175°C)
40
1 10
Ω , f [kHz]
Figure 21. Thermal impedance
ZthTO2T_A
K d=0.5
0.2
10
-1
0.1
0.02
0.05
0.01
10
-2
10 -5
Single pulse
10 -4
10
-3 10 -2
10 -1 t p
(s)
DocID026401 Rev 1 9/18
Test circuits STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Figure 22. Test circuit for inductive load switching
Figure 23. Gate charge test circuit k k k k k k
V
CE
Figure 24. Switching waveform
AM01504v1
V
G
I C
Td(on)
Ton
Tr(Ion)
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
AM01505v1
AM01506v1
10/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 25. TO-247 drawing
DocID026401 Rev 1
0075325_G
11/18
Package mechanical data
Dim.
A
A1 b b1 b2 c
D
L1
L2
∅ P
∅
R
S
E e
L
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
Table 7. TO-247 mechanical data mm.
Typ.
5.45
18.50
3.55
4.50
5.30
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
12/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4.2 TO-247 long leads, STGWA80H65FB
Package mechanical data
Figure 26. TO-247 long leads drawing
DocID026401 Rev 1
8463846_A_F
13/18
Package mechanical data
Dim.
b2 b3 c
D
E
E2
A
A1
A2 b
L1
P
Q
S
E3 e
L
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Table 8. TO-247 long leads mechanical data mm
Min.
4.90
2.31
1.90
1.16
Typ.
5.00
2.41
2.00
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
14/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Figure 27. TO-3P drawing
Package mechanical data
DocID026401 Rev 1
8045950_B
15/18
Dim.
E1
E2 e
L
L1
L2
øP
øP1
Q
Q1 b1 b2 c
D
D1
E
A
A1
A2 b
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Table 9. TO-3P mechanical data mm
Min.
13.40
9.40
5.15
19.80
3.30
18.20
3.30
3.10
4.80
3.60
4.60
1.45
1.20
0.80
1.80
2.80
0.55
19.70
13.70
15.40
Typ.
13.60
9.60
5.45
20
3.50
18.40
3.40
3.20
5
3.80
4.80
1.50
1.40
1.00
2.00
3.00
0.60
19.90
13.90
15.60
Max.
13.80
9.90
5.75
20.20
3.70
18.60
3.50
3.30
5.20
4
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
14.10
15.80
16/18 DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Date
13-Jun-2014
Revision
Table 10. Document revision history
Changes
1 Initial release.
Revision history
DocID026401 Rev 1 17/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
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