STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26
Ω
- 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type V
DSS
R
DS(on)
I
D
Pw
STF20NM60D
STP20NM60FD
600V <0.29
Ω 20A 192W
600V <0.29
Ω 20A 45W
STW20NM60FD 600V <0.29
Ω 20A 214W
■
■
■
■
■
High dv/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistancE
Tight process control and high manufacturing yields
Description
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Applications
■ Switching application
TO-247
TO-220FP
1
2
3
TO-220
1
2
3
Internal schematic diagram
Order codes
Part number
STF20NM60D
STP20NM60FD
STW20NM60FD
Marking
F20NM60D
P20NM60FD
W20NM60FD
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
August 2006 Rev 4 1/15 www.st.com
15
3
4
5
1
2
Contents
Contents
STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STF20NM60D - STP20NM60FD - STW20NM60FD Electrical ratings
Table 1.
Absolute maximum ratings
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(2)
P
TOT
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate- source voltage
= 0)
= 20 k Ω )
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
= 100°C
Total dissipation at T
C
= 25°C
Derating factor dv/dt
(3)
Peak diode recovery voltage slope
V
ISO
T j
T stg
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
1.
Limited only by maximum temperature allowed
2.
Pulse width limited by safe operating area
3.
I
SD
< 20A, di/dt < 400A/µs, V
DD
= 80%V
(BR)DSS
Table 2.
Thermal resistance
TO-220
20
12.6
80
192
1.20
-
Value
Unit
TO-220FP TO-247
600
600
± 30
20
(1)
12.6
(1)
80
(1)
45
0.36
20
2500
20
12.6
80
214
1.42
-
– 65 to 150
A
A
W
W/°C
V/ns
V
°C
°C
V
A
V
V
Value
Symbol Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T l
Maximum lead temperature for soldering purpose
Table 3.
Symbol
I
AR
E
AS
Avalanche data
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
TO-220 TO-220FP TO-247
0.65
62.5
2.8
0.585
30
300
Value
10
700
Unit
°C/W
°C/W
°C
Unit
A mJ
3/15
Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125 °C
V
GS
= ±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
Min Typ Max Unit
600
3 4
1
10
±10
0
5
V
µA
µA
µA
V
0.26 0.29
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min Typ Max Unit g fs
(1)
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
C iss
C oss
C rss
C oss eq.
(2)
Input capacitance
Output capacitance
Reverse transfer capacitance
R
G
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Equivalent output capacitance V
GS
= 0V, V
DS
= 0V to 480V
Gate input resistance f=1 MHz Gate DC Bias = 0
Test signal level = 20mV open drain
9
1300
500
35
190
2.7
S
Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 480V, I
D
= 10V
(see Figure 17)
= 20A, 37
10
17
52
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss when V
DS increases from 0 to 80% nC nC nC pF pF pF pF
4/15
STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics
Table 6.
Symbol t d(on) t r t r(Voff) t f t c
Switching times
Parameter
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V
DD
= 300V, I
D
= 10A
R
G
= 4.7
Ω V
GS
= 10V
(see Figure 16)
V
DD
= 480 V, I
D
= 20A,
R
G
= 4.7
Ω, V
GS
= 10V
(see Figure 16)
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
I
SD
(1)
SDM
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, V
I
SD
= 20 A, T j
GS
= 0
= 25°C di/dt =100A/µs,V
DD
=60V
(see Figure 21)
t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, T j
= 150°C di/dt =100A/µs,V
DD
=60V
(see Figure 21)
1.
Pulse width limited by safe operating area
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
Max.
Unit
25
12
8
22
30 ns ns ns ns ns
Min Typ.
Max Unit
20
80
1.5
240
1800
16
396
2960
20 ns nC
A ns nC
A
A
A
V
5/15
Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD
Figure 1.
Safe operating area for TO-220 Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating areafor TO-220FP Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Safe operating area for TO-247 Figure 6.
Thermal impedance for TO-247
6/15
STF20NM60D - STP20NM60FD - STW20NM60FD
Figure 7.
Output characterisics
Electrical characteristics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
7/15
Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD
Figure 13. Normalized gate threshold voltage vs temperature
Figure 14. Normalized on resistance vs temperature
Figure 15. Source-drain diode forward characteristics
8/15
STF20NM60D - STP20NM60FD - STW20NM60FD
3 Test circuit
Figure 16. Switching times test circuit for resistive load
Figure 17. Gate charge test circuit
Test circuit
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
9/15
Package mechanical data
4
STF20NM60D - STP20NM60FD - STW20NM60FD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
10/15
STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data
DIM.
e1
F
H1
J1
L
L1
L20
L30
øP
Q
D
E e
A b b1 c
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA mm.
TYP MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/15
Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD
DIM.
e
L
L1
L2 b2 c
D
E
øP
øR
S
A
A1 b b1
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA mm.
TYP
5.45
18.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
5.50
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
12/15
STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data
DIM.
G1
H
L2
L3
F
F1
F2
G
A
B
D
E
L4
L5
L6
L7
Ø
0.75
1.15
1.15
4.95
2.4
10
MIN.
4.4
2.5
2.5
0.45
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA mm.
TYP
16
1
1.7
1.7
5.2
2.7
10.4
MAX.
4.6
2.7
2.75
0.7
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L6
L7
L3
L2
L5
L4
1 2 3
13/15
Revision history STF20NM60D - STP20NM60FD - STW20NM60FD
Table 8.
Date
09-Sep-2004
21-Apr-2006
25-Jul-2006
01-Aug-2006
Revision history
Revision
1
2
3
4
Changes
First release
New template
Modified part number
Corrected unit on
Table 5.: Dynamic
14/15
STF20NM60D - STP20NM60FD - STW20NM60FD
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