STP60NF06
N-channel 60V - 0.014
Ω
- 60A TO-220
STripFET II™ Power MOSFET
General features
Type
STP60NF06
V
DSS
60V
R
DS(on)
I
D
<0.016
Ω 60A
■
■
■
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
TO-220
1
2
3
Internal schematic diagram
Applications
■ Switching application
Order code
Part number
STP60NF06
Marking
P60NF06
Package
TO-220
Packaging
Tube
March 2007 Rev 6 1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STP60NF06
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP60NF06 Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
Gate- source voltage
GS
= 0)
Drain current (continuos) at T
C
Drain current (continuos) at T
C
Drain current (pulsed)
= 25°C
= 100°C
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope dv/dt
(2)
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤ 60A, di/dt ≤ 400 A/ µ s, V
DD
≤ ≤ T jmax
Table 2.
Symbol
Thermal data
Parameter
R thj-case
R thj-a
T l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=30V)
Value
1.36
62.5
300
Value
30
370
Value
60
±20
60
42
240
110
0.74
7.5
– 55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
°C
Unit
A mJ
3/12
Electrical characteristics STP60NF06
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source
Breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
=Max rating, T
C
=125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
Min.
Typ.
Max.
Unit
60
2
1
10
V
µA
µA
±100 nA
4 V
0.014
0.016
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
C iss
C oss
C rss
Forward transconductance V
DS
= 15V
,
I
D
=30A
Input capacitance
Output capacitance V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Reverse transfer capacitance
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 30V, I
D
= 10V
= 60A,
(see Figure 12)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter Test conditions t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 30V, I
D
= 30A
R
G
= 4.7
Ω V
GS
= 10V
(see Figure 11)
V
DD
= 30V, I
D
= 30A,
R
G
= 4.7
Ω,
V
GS
=10V
(see Figure 11)
Min.
Typ.
Max.
Unit
50
1660
400
S pF pF
140
54
9
23
73 pF nC nC nC
Min.
Typ.
Max.
Unit
15
65
45
20 ns ns ns ns
4/12
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 60A, V
GS
= 0
I
SD
= 60A, V
DD
=30V di/dt = 100A/µs, Tj = 150°C
(see Figure 13)
Min Typ.
Max Unit
70
185
5
60 A
240 A
1.3
V ns nC
A
5/12
Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STP60NF06
Figure 3.
Output characteristics Figure 4.
Transfer characteristics
Figure 5.
Source-drain diode forward characteristics
Figure 6.
Static drain-source on resistance
6/12
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
7/12
Test circuit
3 Test circuit
Figure 11. Switching times test circuit for resistive load
Figure 12. Gate charge test circuit
STP60NF06
Figure 13. Test circuit for inductive load switching and diode recovery times
Figure 14. Unclamped Inductive load test circuit
Figure 15. Unclamped inductive waveform Figure 16. Switching time waveform
8/12
STP60NF06
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
Dim e1
F
H1
J1
L
L1
L20
L 3 0
θ P
Q
D
D1
E e
A b b 1 c
STP60NF06
TO-220 mechanical data
Min
4.40
0.61
1.14
0.4
9
15.25
10
2.40
4.
9 5
1.2
3
6.20
2.40
1 3
3 .50
3 .75
2.65
mm
Typ
1.27
16.40
2 8 .
9 0
Max
4.60
0.
88
1.70
0.70
15.75
10.40
2.70
5.15
1.
3 2
6.60
2.72
14
3 .
93
3 .
8 5
2.
9 5
Min
0.17
3
0.024
0.044
0.01
9
0.6
0.
393
0.0
9 4
0.1
9 4
0.04
8
0.244
0.0
9 4
0.511
0.1
3 7
0.147
0.104
inch
Typ
0.050
0.645
1.1
3 7
Max
0.1
8 1
0.0
3 4
0.066
0.027
0.62
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
10/12
STP60NF06
Table 8.
Date
09-Sep-2004
17-Aug-2006
04-Oct-2006
02-Mar-2007
Revision history
Revision
3
4
5
6
Changes
Complete version
The document has been reformatted
Changes in
Dynamic
Safe operating area has been updated
Revision history
11/12
STP60NF06
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