STP60NS04ZB
N-channel clamped - 10m
Ω
- 60A - TO-220
Fully protected Mesh Overlay™ Power MOSFET
General features
Type V
DSS
STP60NS04ZB Clamped
R
DS(on)
< 0.015
Ω
■
■
■
100% avalanche tested
Low capacitance and gate charge
175 °C maximum junction temperature
I
D
60A
Description
This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh
Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
Applications
■ Switching application
TO-220
1
2
3
Internal schematic diagram
Part number
STP60NS04ZB
Marking
P60NS04ZB
Package
TO-220
Packaging
Tube
October 2006 Rev 2 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STP60NS04ZB
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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2/13
STP60NS04ZB Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DG
I
GS
I
DM
(1)
P tot
Drain-source voltage (V
Gate- source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain gate current (continuous)
C
= 25°C
C
= 100°C
Gate source current (continuous)
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
V
V
ESD(G-S)
ESD(G-D)
Gate-source ESD
(HBM - C = 100pF, R=1.5 k
Ω
)
Gate-drain ESD
(HBM - C = 100pF, R=1.5 k
Ω
)
V
ESD(D-S)
Drain-source ESD
(HBM - C = 100pF, R=1.5 k
Ω
)
Storage temperature T stg
T j
Max. operating junction temperature
1.
Pulse width limited by safe operating area.
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
T
J
Maximum lead temperature for soldering purpose
-65 to 175
Value
Clamped
Clamped
60
42
±50
±50
240
150
1
6
4
4
1
62.5
300
Unit
A mA mA
A
V
V
A
W
W/°C
KV
KV
KV
°C
°C/W
°C/W
°C
I
AR
E
AS
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 30 V)
Max Value
60
400
Unit
A mJ
3/13
Electrical characteristics STP60NS04ZB
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
V
(BR)DSS
I
I
V
DSS
GSS
GSS
Drain-source breakdown voltage
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate-source breakdown voltage
Test conditions
I
D
= 1mA, V
GS
=0
-40 < T j
< 175°C
V
DS
= 16V; T
J
=150°C
V
DS
= 16V; T
J
=175°C
V
GS
= ±10V;T j
=175°C
V
GS
= ±16V;T j
=175°C
I
GS
= 100µA
V
GS(th)
R
DS(on)
Gate threshold voltage
Static drain-source on resistance
V
DS
= V
GS
, I
D
= 1mA
-40 < T
J
< 150°C
V
GS
= 10V, I
D
= 30A
V
GS
= 16V, I
D
= 30A
Min.
33
18
1.7
Typ.
Max.
Unit
50
100
50
150
V
µA
µA
µA
µA
V
3
11
10
4.2
15
14
V m
Ω m Ω
Table 4.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit g fs
(1)
C iss
C oss
C rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 15V, I
D
=30A
V
DS
= 25V, f = 1MHz,
V
GS
= 0
20 40
1700
800
190
2100
1000
240 t r(Voff) t f t c
Turn-on delay time
Fall time
Cross-over time
V clamp
= 30V, I
D
= 60A
R
G
= 4.7
Ω V
GS
= 10V
(see Figure 14
)
60
45
100
75
60
130
Total gate charge 48 42 Q g
V
DD
= 18V, I
D
= 60A,
Q gs
Q gd
Gate-source charge V
GS
= 10V, R
G
= 4.7
Ω
13
Obsolete Product(s) - Obsolete Product(s)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
nC nC nC ns ns ns
S pF pF pF
4/13
STP60NS04ZB Electrical characteristics
Table 5.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
Source-drain current
Source-drain current
(pulsed)
V
SD
(2) t rr
Q rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 60A, V
GS
= 0
I
SD
= 60A, di/dt = 100A/µs,
V
DD
= 15V, T j
= 150°C
(see
Figure 16 )
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
Typ.
Max.
Unit
50
62
2.6
60
240
1.5
A
A
V ns nC
A
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Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STP60NS04ZB
Figure 3.
Output characterisics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
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STP60NS04ZB Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12.
Zero gate voltage drain current vs temperature
Obsolete Product(s) - Obsolete Product(s)
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Electrical characteristics
Figure 13. Normalized BV
DSS
vs temperature
STP60NS04ZB
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STP60NS04ZB
3 Test circuit
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped Inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
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Package mechanical data
4 Package mechanical data
STP60NS04ZB
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STP60NS04ZB Package mechanical data
DIM.
e1
F
H1
J1
L
L1
L20
L30
øP
Q
D
E e
A b b1 c
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA mm.
TYP MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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Revision history
Table 6.
Date
Revision history
Revision
21-Jun-2004
04-Oct-2006
1
2
Changes
Complete document
New template, no content change
STP60NS04ZB
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STP60NS04ZB
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