STW78N65M5
Automotive-grade N-channel 650 V, 0.024 Ω typ., 69 A,
MDmesh™ V Power MOSFET in a TO-247 package
Datasheet
-
production data
Features
TO-247
Figure 1. Internal schematic diagram
Order code V
DS
@T jmax.
STW78N65M5 710 V
R
DS(on)
max.
I
D
0.032 Ω 69 A
• Designed for automotive applications and
AEC-Q101 qualified
• Higher V
DSS
rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
Applications
•
Switching applications
'
1
2
3
*
6
$0Y
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Order code
STW78N65M5
Table 1. Device summary
Marking Package
78N65M5 TO-247
Packaging
Tube
August 2013
This is information on a product in full production.
DocID023457 Rev 4 1/14 www.st.com
3
4
5
1
2
Contents
Contents
STW78N65M5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID023457 Rev 4
STW78N65M5 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2) dv/dt
(3)
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤
69 A, di/dt = 400 A/µs, V
DS peak
< V
(BR)DSS
, V
DD
= 400 V
3.
V
DS
≤ 520 V
Value
±
25
69
41.5
276
450
15
50
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
0.28
50
Symbol
I
AR
E
AS
Table 4. Avalanche characteristics
Parameter
Max current during repetitive or single pulse avalanche
(pulse width limited by T
JMAX
)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
15
2000
Unit
°C/W
°C/W
Unit
A mJ
Unit
A
A
W
V
A
V/ns
V/ns
°C
°C
DocID023457 Rev 4 3/14
14
Electrical characteristics STW78N65M5
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5. On /off states
Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
(V
GS
= 0)
I
D
= 1 mA
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, T
C
=125 °C
Gate-body leakage current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 34.5 A
Min.
Typ.
Max.
Unit
650 V
3
1
100
µA
µA
±100 nA
4 5 V
0.024
0.032
Ω
Table 6. Dynamic
Test conditions Symbol Parameter Min.
Typ.
Max.
Unit
C
C
C
C iss oss rss o(tr)
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
V
V
V
DS
GS
GS
= 100 V, f = 1 MHz,
= 0
= 0, V
DS
= 0 to 520 V
-
-
-
-
9000
210
9
768
-
-
-
pF pF pF pF
C o(er)
(2)
R
G
Equivalent capacitance energy related
Intrinsic gate resistance
V
GS
= 0, V
DS
= 0 to 520 V f = 1 MHz open drain -
205
1.5
-
pF
Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 520 V, I
= 10 V
(see
Figure 16
D
)
= 34.5 A,
-
-
203
50
84 -
-
nC nC nC
1.
C o(tr)
is a constant capacitance value that gives the same charging time as C oss to 80% V
DSS
.
while V
DS
is rising from 0
2.
C o(er)
is a constant capacitance value that gives the same stored energy as C oss to 80% V
DSS
.
while V
DS
is rising from 0
4/14 DocID023457 Rev 4
STW78N65M5 Electrical characteristics
Symbol t d(V) t r(V) t f(i) t c(off)
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 7. Switching times
Test conditions
V
DD
= 400 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 17
)
(see Figure 20
)
Min.
Typ.
Max.
Unit
-
-
-
-
163
14
14
26
-
-
-
ns ns ns ns
Symbol Parameter
Table 8. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
I
SD
SD
= 69 A, V
(see
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
GS di/dt = 100 A/µs
V
SD
= 69 A,
DD
= 0
= 100 V (see
= 69 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
Figure 17
)
Figure 17
= 150 °C
)
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
-
-
-
504
13
49
635
19
59
69
276
1.5
A
A
A
V ns
µC
A ns
µC
DocID023457 Rev 4 5/14
14
Electrical characteristics STW78N65M5
2.1
I
D
(A)
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
AM15574v1
100
10
Oper
Limited b
DS(on)
10µs
100µs
1ms
10ms
1
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
Figure 4. Output characteristics
I
D
(A)
AM10393v1
250
V
GS
=10V
200
1 10
8V
100 V
DS
(V)
150
100
50
0
0 5 10 15
7V
20 25
6V
V
DS
(V)
Figure 5. Transfer characteristics
AM10394v1
I
D
(A)
225
200
175
150
125
100
75
50
25
0
3 4
V
DS
=30V
5 6 7 8 9 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM15575v1
V
GS
(V)
12
V
DD
=520V
I
D
=34.5A
Figure 7. Static drain-source on-resistance
R
DS(on)
(
Ω
)
V
GS
=10V
AM10396v1
0.026
10
8
6
4
0.024
0.022
2
0
0 50 100 150 200 250 Q g
(nC)
0.020
0 10 20 30 40 50 60 70 80 I
D
(A)
6/14 DocID023457 Rev 4
STW78N65M5 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM15577v1
Figure 9. Output capacitance stored energy
AM10398v1 E oss
(µJ)
40
100000
35
10000
Ciss 30
25
1000
20
Coss
100 15
10
10 Crss
1
0.1
1 10 100 1000 V
DS
(V)
5
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM04972v1 V
GS(th)
(norm)
1.10
I
D
=250µA
V
DS
=V
GS
1.00
Figure 11. Normalized on-resistance vs temperature
R
DS(on)
(norm)
2.5
2
V
DS
=10 V
I
D
=34.5 A
AM15573v1
1.5
0.90
1
0.80
0.5
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
0
-55 -25 5 35 65 95 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM04974v1
V
SD
(V)
T
J
=-50°C
1.2
Figure 13. Normalized V
DS
vs temperature
V
DS
(norm)
1.08
I
D
= 1mA
AM10399v1
1.06
1.0
1.04
0.8
1.02
T
J
=25°C
0.6
1.00
T
J
=150°C
0.98
0.4
0.96
0.2
0
0 10 20 30 40 50 I
SD
(A)
0.94
0.92
-50 -25 0 25 50 75 100 T
J
(°C)
DocID023457 Rev 4 7/14
14
Electrical characteristics
Figure 14. Switching losses vs gate resistance
(1)
AM15576v1
E ( µ J)
2500
V
DD
=400V
V
GS
=10V
I
D
=40A
Eon
2000
1500
1000
500
0
0 10 20 30 40
1.
Eon including reverse recovery of a SiC diode
Eoff
R
G
(
Ω
)
STW78N65M5
8/14 DocID023457 Rev 4
STW78N65M5
3 Test circuits
Test circuits
Figure 15. Switching times test circuit for resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ
F
I
G
=CONST
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 17. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 18. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ
F
1000
μ
F
V
DD
V i
V
D
I
D
L
2200
μ
F
3.3
μ
F
V
DD
D.U.T.
P w
AM01470v1
Figure 19. Unclamped inductive waveform
V
(BR)DSS
V
D
,G
9GV
AM01471v1
Figure 20. Switching time waveform
&RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII
,G
I
DM
V
DD
I
D
V
DD
9JV
9JV
9JV,W
9GV
9GV
AM01472v1
7FU RVV RYHU
,G
$0Y
DocID023457 Rev 4 9/14
14
Package mechanical data
4 Package mechanical data
STW78N65M5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK is an ST trademark.
10/14 DocID023457 Rev 4
STW78N65M5
Dim.
A
A1 b b1 b2 c
D
L1
L2
∅ P
∅
R
S
E e
L
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
Table 9. TO-247 mechanical data mm.
Typ.
5.45
18.50
3.55
4.50
5.30
5.50
Package mechanical data
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID023457 Rev 4 11/14
14
Package mechanical data
Figure 21. TO-247 drawing
STW78N65M5
0075325_G
12/14 DocID023457 Rev 4
STW78N65M5 Revision history
Date
16-Jul-2012
22-Jan-2013
07-Aug-2013
08-Aug-2013
Revision
Table 10. Document revision history
Changes
1
2
3
4
First release.
Modified: R
DS(on)
on first page, I
D
, I
DM
on Table 2 , note
2 on
Table 2 ,
typical values on Table 6 ,
7 , max and typical values on Table 8 ,
Figure 2
,
6
,
8
,
9
,
11 and
14
– Minor text changes
– Modified:
Applications in first page
– Added: MOSFET dv/dt ruggedness parameter in Table 2
– Added: Table 4: Avalanche characteristics
– Modified:
Figure 15 , 16
,
17 and 18
– Minor text changes
– Modified:
Figure 14
DocID023457 Rev 4 13/14
14
STW78N65M5
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