STW57N65M5-4
N-channel 650 V, 0.056
Ω
typ., 42 A, MDmesh™ V Power MOSFET
in a TO247-4 package
Datasheet
−
production data
TO247-4
1
2
3
4
Features
Order code
STW57N65M5-4
V
DS
@ T
Jmax
710 V
R
DS(on) max
I
D
0.063 Ω 42 A
•
Higher V
DS
rating
•
Higher dv/dt capability
•
Excellent switching performance thanks to the extra driving source pin
•
Easy to drive
•
100% avalanche tested
Figure 1. Internal schematic diagram
Drain(1)
Applications
• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Gate(4)
Driver source(3)
Power source(2)
AM10177v1
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Order code
STW57N65M5-4
Table 1. Device summary
Marking Package
57N65M5 TO247-4
Packaging
Tube
June 2013
This is information on a product in full production.
DocID024559 Rev 2 1/14 www.st.com
14
3
4
5
1
2
Contents
Contents
STW57N65M5-4
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID024559 Rev 2
STW57N65M5-4 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Gate- source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
= 25 °C
= 100 °C
I
E
AR
AS dv/dt
(2) dv/dt
(3)
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche
(pulse width limited by T
JMAX
)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤
42 A, di/dt = 400 A/µs, peak V
DS
< V
(BR)DSS
, V
DD
= 400 V
3.
V
DS
≤
520 V
Value
±25
42
26.5
168
250
11
960
15
50
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
0.50
50
Unit
°C/W
°C/W mJ
V/ns
V/ns
°C
°C
Unit
A
A
W
V
A
A
DocID024559 Rev 2 3/14
Electrical characteristics STW57N65M5-4
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4. On /off states
Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, T
C
=125 °C
Gate-body leakage current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 21 A
Min.
Typ.
Max.
Unit
650
3
1
100
± 100 nA
V
µA
µA
4 5 V
0.056
0.063
Ω
Symbol Parameter
Table 5. Dynamic
Test conditions Min.
Typ.
Max.
Unit
C
C
C iss oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 100 V, f = 1 MHz,
= 0
-
-
-
4200
115
9
-
-
pF pF pF
C
C o(tr)
(1) o(er)
(2)
Equivalent capacitance time related
Equivalent capacitance energy related
V
V
GS
GS
= 0, V
= 0, V
DS
DS
= 0 to 520 V
= 0 to 520 V -
303
93 -
pF pF
R
G
Intrinsic gate resistance f = 1 MHz open drain 1.3
Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 520 V, I
= 10 V
(see
Figure 16
D
)
= 21 A,
-
-
98
23
40 -
-
nC nC nC
1.
C o(tr)
is a constant capacitance value that gives the same charging time as C oss to 80% V
DSS
.
while V
DS
is rising from 0
2.
C o(er)
is a constant capacitance value that gives the same stored energy as C oss to 80% V
DSS
.
while V
DS
is rising from 0
4/14 DocID024559 Rev 2
STW57N65M5-4 Electrical characteristics
Symbol t d(V) t r(V) t f(i) t c(off)
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
V
DD
= 400 V, I
D
= 28 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15
)
(see Figure 20
)
Min.
Typ.
Max.
Unit
-
-
-
-
79
9
8
14
-
-
-
ns ns ns ns
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
I
SD
SD
= 42 A, V
(see
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
GS di/dt = 100 A/µs
V
SD
= 42 A,
DD
= 0
= 100 V (see
= 42 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
Figure 17
)
Figure 17
= 150 °C
)
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
-
-
-
418
8
40
528
12
44
42
168
1.5
A
A
A
V ns
µC
A ns
µC
DocID024559 Rev 2 5/14
Electrical characteristics STW57N65M5-4
2.1
I
D
(A)
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
AM14705v1
100
10 y max R ed b
Operation in this ar
Limit ea is
DS(on)
10μs
100μs
1ms
10ms
1
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
1 10 100 V
DS
(V)
I
D
(A)
100
Figure 4. Output characteristics
AM14706v1
VGS= 9, 10 V
VGS= 8 V
80
VGS= 7 V
60
Figure 5. Transfer characteristics
AM14707v1
I
D
(A)
100
80
VDS= 25 V
60
40
40
20 VGS= 6 V
20
0
0 4 8 12 16 V
DS
(V)
0
3 4 5 6 7 8 9 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
V
GS
(V)
10
V
DS
V
DD
=520V
I
D
=21A
AM14708v1
V
DS
(V)
500
Figure 7. Static drain-source on-resistance
R
DS(on)
(
Ω
)
0.062
V
GS
=10V
AM14709v1
0.060
8 400
0.058
6 300
0.056
4 200
0.054
2 100
0.052
0
0 20 40 60 80 100
0
Q g
(nC)
0.05
0 10 20 30 I
D
(A)
6/14 DocID024559 Rev 2
STW57N65M5-4 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
10000
AM14710v1
Figure 9. Output capacitance stored energy
AM14711v1
E oss
(μJ)
18
16
Ciss
14
1000
100
Coss
12
10
8
10
Crss
6
4
1
0.1
1 10 100 V
DS
(V)
2
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM04972v1 V
GS(th)
(norm)
I
D
=250μA
1.10
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 11. Normalized on-resistance vs temperature
AM05501v2 R
DS(on)
(norm)
2.1
1.9
I
D
= 21 A
V
GS
= 10 V
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM04974v1
V
SD
(V)
1.2
T
J
=-50°C
Figure 13. Normalized V
DS
vs temperature
V
DS
(norm)
1.08
I
D
= 1mA
AM10399v1
1.06
1.0
1.04
0.8
1.02
T
J
=25°C
0.6
1.00
T
J
=150°C
0.98
0.4
0.96
0.2
0
0 10 20 30 40 50 I
SD
(A)
0.94
0.92
-50 -25 0 25 50 75 100 T
J
(°C)
DocID024559 Rev 2 7/14
Electrical characteristics
Figure 14. Switching losses vs gate resistance
(1)
AM11171v1
E (
µ
J)
800
700
600
500
Eon
400
300
200
100
0
0 10 20 30 40
1.
Eon including reverse recovery of a SiC diode.
Eoff
R
G
(
Ω
)
STW57N65M5-4
8/14 DocID024559 Rev 2
STW57N65M5-4
3 Test circuits
Test circuits
Figure 15. Switching times test circuit for resistive load
Figure 16. Gate charge test circuit
V
DD
12V 47k
Ω
100nF
1k Ω
P
W
V
GS
V
D
R
G
R
L
D.U.T.
2200 mF
3.3
mF
V
DD
V i
=20V=V
GMAX
2200 m
F
I
G
=CONST
2.7k
Ω
47k
Ω
100 Ω
D.U.T.
V
G
GND1
(driver signal)
GND2
(power)
P
W
1k
Ω
AM15855v1
Figure 17. Test circuit for inductive load switching and diode recovery times
GND1 GND2
AM15856v1
Figure 18. Unclamped inductive load test circuit
G
D
A
D.U.T.
S
B
25 W
R
G
A
FAST
DIODE
A
B
B
D
L=100 m H
G
S
3.3
m F
1000 m F
V
DD
V
D
I
D
L
2200 m F
3.3
m F
V
DD
V i D.U.T.
GND1 GND2
AM15857v1
Figure 19. Unclamped inductive waveform
V
(BR)DSS
V
D
,G
P w
9GV
GND1 GND2
AM15858v1
Figure 20. Switching time waveform
&RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII
,G
I
DM
V
DD
I
D
V
DD
9JV
9JV
9JV,W
9GV
9GV
AM01472v1
7FU RVV RYHU
,G
$0Y
DocID024559 Rev 2 9/14
Package mechanical data
4 Package mechanical data
STW57N65M5-4
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/14 DocID024559 Rev 2
STW57N65M5-4
Dim.
e e1
L
P
P1
P2
Q
S
T
U
D2
D3
E
E1
E2
E3 b1 b2 c c1
D
D1
A
A1
A2 b
Table 8. TO247-4 mechanical data mm.
Min.
1.05
24.97
15.70
13.10
4.90
2.40
2.44
4.98
19.80
3.50
4.90
2.31
1.90
1.16
1.15
0
0.59
0.58
20.90
16.25
Typ.
5.00
2.41
2.00
1.20
0.60
21.00
16.55
1.20
25.12
15.80
13.30
5.00
2.50
2.54
5.08
19.92
3.60
2.40
5.60
2.50
6.15
9.80
6.00
Package mechanical data
Max.
2.64
5.18
20.10
3.70
7.40
2.60
6.00
1.35
25.27
15.90
13.50
5.10
2.60
5.10
2.51
2.10
1.29
1.25
0.20
0.66
0.62
21.10
16.85
10.20
6.40
DocID024559 Rev 2 11/14
Package mechanical data
Figure 21. TO247-4 drawing
STW57N65M5-4
12/14 DocID024559 Rev 2
B$
STW57N65M5-4
Date
17-Apr-2013
28-Jun-2013
Revision
Table 9. Document revision history
Changes
1
2
First release.
– Modified:
Figure 1 ,
15 , 16
,
17 , 18
– Minor text changes
Revision history
DocID024559 Rev 2 13/14
STW57N65M5-4
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