STF7N65M2
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet - preliminary data
Features
Order code
VDS
RDS(on)
max
ID
STF7N65M2
650 V
1.15 Ω
5A
• Extremely low gate charge
1
2
• Excellent output capacitance (Coss) profile
3
• 100% avalanche tested
TO-220FP
• Zener-protected
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, the device exhibits
both low on-resistance and optimized switching
characteristics. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Table 1. Device summary
Order code
Marking
Package
Packaging
STF7N65M2
7N65M2
TO-220FP
Tube
August 2014
DocID026763 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
Contents
STF7N65M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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DocID026763 Rev 2
STF7N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
ID
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Value
Unit
± 25
V
(1)
A
5
Drain current (continuous) at TC = 100 °C
(1)
3.2
A
IDM(2)
Drain current (pulsed)
20(1)
A
PTOT
Total dissipation at TC = 25 °C
20
W
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s; TC=25 °C)
2500
V
ID
dv/dt (3)
Peak diode recovery voltage slope
15
dv/dt(4)
MOSFET dv/dt ruggedness
50
Tstg
Tj
1.
Parameter
V/ns
Storage temperature
- 55 to 150
°C
Value
Unit
Max. operating junction temperature
Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
4. VDS ≤ 520 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
6.25
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax )
1
A
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50)
103
mJ
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13
Electrical characteristics
2
STF7N65M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
Unit
650
V
VGS = 0, VDS = 650 V
1
µA
VGS = 0, VDS = 650 V,
TC=125 °C
100
µA
VDS = 0, VGS = ± 25 V
±10
µA
3
4
V
0.98
1.15
Ω
Min.
Typ.
Max.
Unit
-
270
-
pF
-
14.5
-
pF
-
0.8
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 2.5 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0
-
108
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Total gate charge
-
9
-
nC
Qgs
Gate-source charge
-
2.3
-
nC
Qgd
Gate-drain charge
VDD = 520 V, ID = 5 A,
VGS = 10 V
(see Figure 15)
-
4.3
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/13
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 325 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Fall time
DocID026763 Rev 2
Min.
Typ.
Max. Unit
-
8
-
ns
-
20
-
ns
-
30
-
ns
-
20
-
ns
STF7N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
5
A
ISDM
(1)
Source-drain current (pulsed)
-
20
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
ISD = 5 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 19)
-
275
ns
-
1.62
µC
-
11.8
A
-
430
ns
-
2.54
µC
-
11.9
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.1
STF7N65M2
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
GIPG060820141147FSR
ID
(A)
)
on
10μs
S(
pe
ra
ite tion
d
by in t
m his
ax a
RD rea
is
10
Li
O
100μs
m
1
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
1
10
100
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
GIPG060820141159FSR
ID (A)
VGS=7, 8, 9, 10V
GIPG060820141210FSR
ID
(A)
8
VDS=20V
8
6V
6
6
4
4
5V
2
2
4V
0
0
10
5
20
15
Figure 6. Gate charge vs gate-source voltage
GIPG060820141216FSR
VDS
VGS
(V)
RDS(on)
(Ω)
600
1.04
10
500
1.02
8
400
1.0
6
300
0.98
4
200
0.96
2
100
0.94
VDS
VDD=520V
ID=5A
0
0
2
4
6
8
10
0
Qg(nC)
2
6
4
8
VGS(V)
Figure 7. Static drain-source on-resistance
(V)
12
6/13
0
0
VDS(V)
GIPG060820141221FSR
VGS=10V
0.92
DocID026763 Rev 2
0
1
2
3
4
5
ID(A)
STF7N65M2
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
GIPG060820141238FSR
C
(pF)
1000
GIPG060820141302FSR
Eoss
(μJ)
2.4
Ciss
100
1.8
10
Coss
1.2
1
Crss
0.6
0.1
0.1
1
100
10
0
0
VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
AM18065v1
VGS(th)
(norm)
100
200 300
AM18066v1
RDS(on)
ID=2.5A
VGS=10V
ID=250μA
1.1
2.2
1.0
1.8
0.9
1.4
0.8
1.0
0.7
0.6
25
0 25
75
125
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
GIPG060820141313FSR
VSD (V)
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
(norm)
0.6
-75
400 500 600
0.2
-75
-25
0 25
75
125 TJ(°C)
Figure 13. Normalized V(BR)DSS vs temperature
AM18067v1
V(BR)DSS
(norm)
TJ=-50°C
1.1
ID=1mA
1.08
1
1.04
0.9
TJ=25°C
1.00
0.8
0.96
0.7
0.6
0.5
0
0.92
TJ=150°C
1
2
3
4
5
ISD(A)
0.88
-75
DocID026763 Rev 2
-25
0 25
75
125
TJ(°C)
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13
Test circuits
3
STF7N65M2
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
9 %5 '66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
8/13
0
DocID026763 Rev 2
10%
AM01473v1
STF7N65M2
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID026763 Rev 2
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13
Package mechanical data
STF7N65M2
Figure 20. TO-220FP drawing
7012510_Rev_K_B
10/13
DocID026763 Rev 2
STF7N65M2
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
θ
3
3.2
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Revision history
5
STF7N65M2
Revision history
Table 10. Document revision history
Date
Revision
29-Jul-2014
1
First release.
2
Updated RDS(on) and typical values in Table 5: On /off states,
Table 6: Dynamic, Table 7: Switching times and Table 8: Source
drain diode.
Added Section 2.1: Electrical characteristics (curves).
07-Aug-2014
12/13
Changes
DocID026763 Rev 2
STF7N65M2
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© 2014 STMicroelectronics – All rights reserved
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