STB24NM60N
N-channel 600 V, 0.168
Ω
typ., 17 A MDmesh™ II Power MOSFET
in a D²PAK package
Datasheet
−
production data
Features
TAB
D
2
PAK
1
3
Order code V
DS
@Tjmax R
DS(on)
max.
STB24NM60N 650 V 0.19 Ω
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
I
D
17 A
Applications
•
Switching applications
Figure 1. Internal schematic diagram
*
'RU7$%
Description
This device is an N-channel Power MOSFET developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
6
$0Y
Order code
STB24NM60N
Table 1. Device summary
Marking
24NM60N
Packages
D
2
PAK
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID018484 Rev 2 1/14 www.st.com
3
4
5
1
2
Contents
Contents
STB24NM60N
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID018484 Rev 2
STB24NM60N Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter Value
V
GS
I
I
D
D
I
DM
(1)
P
TOT dv/dt
(2)
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
± 30
17
11
68
125
15
T
J
T stg
Operating junction temperature
Storage temperature
-55 to 150
1.
Pulse width limited by safe operating area.
2.
I
SD
≤
17 A, di/dt
≤
400 A/µs, peak V
DS
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Table 3. Thermal data
Parameter Symbol
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case max.
Thermal resistance junction-pcb max
1.
When mounted on 1 inch² FR-4, 2 oz Cu
Value
1
30
Symbol
I
AR
E
AS
Table 4. Avalanche characteristics
Parameter Value
Avalanche current, repetitive or notrepetitive (pulse width limited by T
J
max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
6
300
Unit
°C/W
°C/W
Unit
V
A
A
A
W
V/ns
°C
Unit
A mJ
DocID018484 Rev 2 3/14
14
Electrical characteristics STB24NM60N
(Tcase = 25 °C unless otherwise specified)
Symbol Parameter
Table 5. On /off states
Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
V
GS
= 0, I
D
= 1 mA
Zero gate voltage drain current
V
GS
= 0, V
DS
= 600 V
V
GS
= 0, V
DS
= 600 V,
T
C
=125 °C
Gate-body leakage current
V
DS
= 0, V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 8 A
Min.
Typ.
Max.
Unit
600 V
µA 1
100 µA
2 3
0.168
±100 nA
4
0.19
V
Ω
Symbol Parameter
Table 6. Dynamic
Test conditions Min.
Typ.
Max.
Unit
C iss
C
C oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 50 V, f = 1 MHz,
= 0
-
-
-
1330
80
3.2
-
-
pF pF pF
C oss eq.
(1)
Equivalent output capacitance
V
DS
= 0 to 480 V, V
GS
= 0 182 pF
R g
Q g
Q gs
Q gd
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge f=1 MHz open drain
V
V
DD
GS
= 480 V, I
= 10 V
D
(see Figure 15)
= 17 A,
-
-
-
5
44
7
24 -
-
-
-
1.
C o(eff).
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DS
.
when V
DS
Ω nC nC nC
4/14 DocID018484 Rev 2
STB24NM60N Electrical characteristics
Symbol t d(on) t r(v) t d(off) t f(i)
Parameter
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Table 7. Switching times
Test conditions
V
DD
= 300 V, I
D
= 8.5 A,
R
G
= 4.7
Ω , V
GS
= 10 V
(see Figure 14)
Min.
Typ.
Max Unit
-
-
-
-
11.5
16.5
73
37
-
-
-
ns ns ns ns
Symbol Parameter
Table 8. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
SD
V
DD
= 17 A, V
GS
= 17 A, di/dt = 100 A/µs
= 60 V
(see Figure 16)
= 0 t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 17 A, di/dt = 100 A/µs
V
DD
= 60 V T
J
= 150 °C
(see Figure 16)
-
-
-
-
-
-
-
-
-
Min.
Typ.
Max Unit
17
68
1.6
340
4.6
27
404
5.7
28 ns
µC
A
A
A
V ns
µC
A
DocID018484 Rev 2 5/14
14
Electrical characteristics STB24NM60N
2.1
I
D
(A)
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
AM07976v1
10 s area is
(on)
DS(on)
Oper
Limited b y max R
1
10µs
100µs
1ms
10ms
0.1
0.1
1 10 100 V
DS
(V)
Figure 4. Output characteristics
AM07977v1
I
D
(A)
40
V
GS
= 10 V
V
GS
= 7 V
30
V
GS
= 6 V
20
Figure 5. Transfer characteristics
AM07978v1
I
D
(A)
40
V
DS
= 20 V
30
20
10 10
V
GS
= 5 V
0
0 5 10 15 20 25 V
DS
(V)
0
0 2 4 6 8 10 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
V
GS
(V)
12
V
DD
=480V
AM07979v1
V
DS
(V)
I
D
= 17A
500
V
DS
10
400
Figure 7. Static drain-source on-resistance
R
DS(on)
(
Ω
)
0.176
0.174
0.172
V
GS
=10V
AM08534v1
8
0.170
300
0.168
6
0.166
200
4
0.164
0.162
2
100
0
0 10 20 30 40 50
0
Q g
(nC)
0.160
0.158
0 5 10 15 I
D
(A)
6/14 DocID018484 Rev 2
STB24NM60N Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM08535v1
Figure 9. Output capacitance stored energy
AM08536v1
E oss
(µJ)
9.0
1000
100
10
1
0.1
1 10 100
Ciss
Coss
Crss
V
DS
(V)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM08537v1
V
GS(th)
(norm)
1.10
Figure 11. Normalized on-resistance vs temperature
R
DS(on)
(norm)
2.0
I
D
= 8 A
AM08538v1
I
D =
250 µA
1.00
1.5
0.90
1.0
0.80
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 12. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm)
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
I
D
=1mA
0 25 50 75 100
AM09028v1
T
J
(°C)
0.5
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 13. Source-drain diode forward characteristics
AM10328v1
V
SD
(V)
1.4
T
J
=-50°C
1.2
T
J
=25°C
1.0
0.8
T
J
=150°C
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14 16 I
SD
(A)
DocID018484 Rev 2 7/14
14
Test circuits
3 Test circuits
STB24NM60N
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 16. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 17. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 18. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 19. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/14 DocID018484 Rev 2
STB24NM60N
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID018484 Rev 2 9/14
14
Package mechanical data
Figure 20. D²PAK (TO-263) drawing
STB24NM60N
10/14 DocID018484 Rev 2
0079457_U
STB24NM60N
Dim.
L
L1
L2
R
V2
E1
E2 e e1
H
J1 c c2
D
D1
D2
E
A
A1 b b2
Package mechanical data
4.88
15
2.49
2.29
1.27
1.30
Table 9. D²PAK (TO-263) mechanical data mm
Typ.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
8.50
6.85
7.75
1.30
8.70
7.05
2.54
0.4
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
DocID018484 Rev 2 11/14
14
Package mechanical data
Figure 21. D²PAK footprint
(a)
STB24NM60N
Footprint
12/14 a.
All dimension are in millimeters
DocID018484 Rev 2
STB24NM60N
Date
05-Jan-2011
24-Jul-2014
Revision
Table 10. Document revision history
Changes
1
2
First release.
– Modified: the entire typical values in
Table 6
– Updated:
Section 4: Package mechanical data
– Minor text changes
Revision history
DocID018484 Rev 2 13/14
14
STB24NM60N
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14/14 DocID018484 Rev 2
