STFI24NM60N
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET
in a I²PAKFP package
Datasheet − production data
Features
Order codes
VDS @Tjmax
RDS(on) max.
ID
STFI24NM60N
650 V
0.19 Ω
17 A
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
1
2
• 100% avalanche tested
3
• Low input capacitance and gate charge
I2PAKFP
(TO-281)
• Low gate input resistance
Figure 1. Internal schematic diagram
' Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
*
6
$0Y
Table 1. Device summary
Order code
Marking
Packages
Packaging
STFI24NM60N
24NM60N
I2PAKFP (TO-281)
Tube
July 2014
This is information on a product in full production.
DocID022440 Rev 3
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www.st.com
Contents
STFI24NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STFI24NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
17(1)
A
ID
Drain current (continuous) at
TC = 100 °C
11(1)
A
IDM (2)
Drain current (pulsed)
68(1)
A
PTOT
Total dissipation at TC = 25 °C
30
W
Peak diode recovery voltage slope
15
V/ns
2500
V
-55 to 150
°C
VGS
dv/dt(3)
Parameter
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
TJ
Tstg
Operating junction temperature
Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
4.17
°C/W
Rthj-amb
Thermal resistance junction-ambient
max.
62.5
°C/W
Value
Unit
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max)
6
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
300
mJ
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12
Electrical characteristics
2
STFI24NM60N
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0, VDS = 600 V
1
µA
VGS = 0, VDS = 600 V,
TC=125 °C
100
µA
VDS = 0, VGS = ± 25 V
±100
nA
3
4
V
0.168
0.19
Ω
Min.
Typ.
Max.
Unit
-
1330
-
pF
-
80
-
pF
3.2
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on- resistance
2
VGS = 10 V, ID = 8 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
182
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
5
-
Ω
Qg
Total gate charge
-
44
-
nC
Qgs
Gate-source charge
-
7
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 17 A,
VGS = 10 V
(see Figure 15)
-
24
-
nC
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1. Co(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/12
DocID022440 Rev 3
STFI24NM60N
Electrical characteristics
Table 7. Switching times
Symbol
td(on)
tr(v)
td(off)
tf(i)
Parameter
Test conditions
Turn-on delay time
VDD = 300 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Voltage rise time
Turn-off-delay time
Fall time
Min.
Typ.
Max Unit
-
11.5
-
ns
-
16.5
-
ns
-
73
-
ns
-
37
-
ns
Table 8. Source drain diode
Symbol
ISD
ISDM (1)
VSD
(2)
Parameter
Test conditions
Min. Typ. Max
Unit
Source-drain current
-
17
A
Source-drain current (pulsed)
-
68
A
1.6
V
Forward on voltage
ISD = 17 A, VGS = 0
-
trr
Reverse recovery time
-
340
ns
Qrr
Reverse recovery charge
-
4.6
µC
IRRM
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 16)
-
27
A
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
-
404
ns
-
5.7
µC
-
28
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID022440 Rev 3
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12
Electrical characteristics
2.1
STFI24NM60N
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM07975v1
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
10
1
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
0.1
10
1
100
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM07977v1
ID
(A)
40
AM07978v1
ID (A)
VGS = 10 V
40
VDS= 20 V
VGS = 7 V
30
30
VGS = 6 V
20
20
10
10
VGS = 5 V
0
0
5
10
15
20
Figure 6. Gate charge vs gate-source voltage
AM07979v1
VDS
VGS
(V)
12
VDD=480V
(V)
ID= 17A
500
VDS
10
0
0
25 VDS(V)
400
2
4
6
8
10 VGS(V)
Figure 7. Static drain-source on-resistance
AM08534v1
RDS(on)
(Ω)
0.176
0.174
VGS=10V
0.172
0.170
8
300
6
0.168
0.166
200
0.164
4
100
2
0.160
0
0
6/12
0.162
10
20
30
40
50
0
Qg(nC)
0.158
0
DocID022440 Rev 3
5
10
15
ID(A)
STFI24NM60N
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
Figure 9. Output capacitance stored energy
AM08535v1
Eoss
(µJ)
9.0
Ciss
8.0
1000
AM08536v1
7.0
6.0
100
5.0
Coss
4.0
3.0
10
2.0
Crss
1
0.1
1
100
10
1.0
0
VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
AM08537v1
VGS(th)
(norm)
0
300
200
100
400
500
VDS(V)
600
Figure 11. Normalized on-resistance vs
temperature
AM08538v1
RDS(on)
(norm)
ID= 8 A
1.10
2.0
ID = 250 µA
1.00
1.5
0.90
1.0
0.80
0.70
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Normalized V(BR)DSS vs temperature
AM09028v1
V(BR)DSS
(norm)
ID=1mA
1.10
0.5
-50 -25
0
25
50
TJ(°C)
Figure 13. Source-drain diode forward
characteristics
AM10328v1
VSD
(V)
1.4
1.08
75 100
TJ=-50°C
1.2
1.06
TJ=25°C
1.0
1.04
TJ=150°C
0.8
1.02
1.00
0.6
0.98
0.4
0.96
0.94
0.92
-50 -25
0.2
0
0
25
50
75
100
TJ(°C)
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0
2
4
6
8
10
12 14 16 ISD(A)
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12
Test circuits
3
STFI24NM60N
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
DocID022440 Rev 3
10%
AM01473v1
STFI24NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID022440 Rev 3
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12
Package mechanical data
STFI24NM60N
Figure 20. I2PAKFP (TO-281) drawing
UHY$
Table 9. I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
10/12
Max.
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
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STFI24NM60N
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
Changes
07-Nov-2011
1
First release.
20-Mar-2012
2
– Document status promoted from preliminary data to production
data.
– Package name has been updated.
– Minor text changes.
24-Jul-2014
3
– Modified: the entire typical values in Table 6
– Minor text changes
DocID022440 Rev 3
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STFI24NM60N
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