STP78N75F4
N-channel 75 V, 0.0092 Ω typ., 78 A STripFET™ DeepGATE™
Power MOSFET in TO-220 package
Datasheet — production data
Features
Type
STP78N75F4
V
DSS
75 V
R
DS(on) max
< 0.011 Ω
■
■
■
■
N-channel enhancement mode
100% avalanched rated
Low gate charge
Very low on-resistance
I
D
78 A
Application
■ Switching applications
TAB
TO-220
1
2
3
Figure 1.
Internal schematic diagram
Description
This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance.
$4!"
'
3
!-V
Device summary
Order codes
STP78N75F4
Marking
78N75F4
Package
TO-220
Packaging
Tube
July 2012
This is information on a product in full production.
Doc ID 15682 Rev 3 1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STP78N75F4
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)
2/12 Doc ID 15682 Rev 3
STP78N75F4
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
E
AS
(2)
T stg
T j
Single pulse avalanche energy
Storage temperature
Operating junction temperature
1.
Pulse width limited by safe operating area
2.
Starting T j
= 25 °C, I
D
= 35 A, V
DD
= 50 V
C
= 25 °C
C
= 100 °C
Table 3.
Symbol
R thj-case
R thj-a
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Electrical ratings
Value
75
± 20
78
55
312
150
1
185
– 55 to 175
Unit
A
A
A
V
V
W
W/°C mJ
°C
Value
1
62.5
Unit
°C/W
°C/W
Obsolete Product(s) - Obsolete Product(s)
Doc ID 15682 Rev 3 3/12
Electrical characteristics STP78N75F4
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source
Breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on- resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= 75 V
V
DS
= 75 V,T
C
=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 39 A
Min.
Typ.
Max.
Unit
75 V
1
100
µA
µA
±100 nA
2 4 V
0.0092
0.011
Ω
Table 5.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DS
GS
Test conditions
= 25 V, f = 1 MHz,
= 0
V
DD
= 37.5 V, I
D
= 78 A,
V
GS
= 10 V
(see Figure 14)
Min.
Typ.
Max.
Unit
-
5015
382 pF pF
218 pF
-
76
23
18.5
nC nC nC
Table 6.
Symbol
Switching times
Parameter Test conditions Min.
Typ.
Max.
Unit t d(on) t r t d(off)
Turn-on delay time
Rise time
25
Obsolete Product(s) - Obsolete Product(s)
Fall time
(see Figure 13)
-
-
33
14
-
ns ns ns ns t f
V
DD
= 37.5 V, I
D
= 39 A
R
G
= 4.7 Ω V
GS
= 10 V
4/12 Doc ID 15682 Rev 3
STP78N75F4 Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 78 A, V
GS
= 0
I
SD
= 78 A, V
DD
= 60 V di/dt = 100 A/µs,
T j
= 150 °C
(see Figure 15)
Min.
Typ.
Max Unit
-
-
-
78
312
1.5
A
A
V
-
67
183
5.5
ns nC
A
Obsolete Product(s) - Obsolete Product(s)
Doc ID 15682 Rev 3 5/12
Electrical characteristics STP78N75F4
Figure 2.
Safe operating area
)
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,IMITEDBYMAX2
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!-V
Figure 3.
Thermal impedance
S
4J #
4C #
3INLGE
PULSE
MS
MS
Figure 4.
Output characteristics
)
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!
6
'3
6
6
$3
6
!-V
Figure 5.
Transfer characteristics
)
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!
6 $3 6
6
!-V
6
6
6 $3 6 6 '3 6
Figure 6.
Normalized BV
DSS
vs temperature Figure 7.
Static drain-source on-resistance
!-V !-V
"6
$33
NORM
2 $3ON
M/HM
6 '3 6
6/12
4 * #
Doc ID 15682 Rev 3
) $ !
STP78N75F4 Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
!-V
6 '3
6
#
P&
6 $$ 6
) $ !
#ISS
!-V
#RSS
1 G N#
#OSS
6 $3 6
Figure 10.
Normalized on-resistance vs temperature
!-V
2 $3ON
NORM
Figure 11.
Normalized gate threshold voltage vs temperature
!-V
6 '3TH
NORM
4 * # 4 * #
Figure 12.
Source-drain diode forward characteristics
6 3$
6
!-V
4 * #
Obsolete Product(s) - Obsolete Product(s)
4 * #
4
*
#
) 3$ !
Doc ID 15682 Rev 3 7/12
STP78N75F4 Test circuits
3 Test circuits
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1 AM01471v1
Figure 17.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 18.
Switching time waveform t on t off t r td on td off t f
Obsolete Product(s) - Obsolete Product(s)
I
DM
90 %
90 %
10 %
10 % V
D S
I
D 0
V
DD
V
DD
90 %
V
G S
0
10 %
AM01472v1 AM0147 3 v1
8/12 Doc ID 15682 Rev 3
STP78N75F4
4 Package mechanical data
Package mechanical data c
D
D1
E e
A b b1 e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Table 8.
TO-220 type A mechanical data
Dim.
mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
Max.
4.60
0.88
1.70
0.70
15.75
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Obsolete Product(s) - Obsolete Product(s)
Doc ID 15682 Rev 3 9/12
Package mechanical data
Figure 19.
TO-220 type A drawing
STP78N75F4
00159 88 _typeA_Rev_ S
Obsolete Product(s) - Obsolete Product(s)
10/12 Doc ID 15682 Rev 3
STP78N75F4 Revision history
Table 9.
Date
12-May-2009
26-Nov-2009
24-Jul-2012
Document revision history
Revision
1
2
3
Changes
First release.
Document status promoted from preliminary data to datasheet (see
Section 2.1: Electrical characteristics (curves)
).
Minor text changes on the cover page.
Updated Section 4: Package mechanical data .
Obsolete Product(s) - Obsolete Product(s)
Doc ID 15682 Rev 3 11/12
STP78N75F4
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