STP100N8F6
Nchannel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)max.
I
D
P
TOT
STP100N8F6 80 V 0.009 Ω
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
100 A 176 W
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Order code
STP100N8F6
Table 1: Device summary
Marking
100N8F6
Package
TO-220
Packing
Tube
February 2016 DocID026838 Rev 3
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STP100N8F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
TO-220 type A package information ................................................ 10
TO-220 type H package information ............................................... 12
5 Revision history ............................................................................ 14
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STP100N8F6
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
E
AS
(2)
T
J
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Single pulse avalanche energy
Operating junction temperature range
Storage temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Starting T j
= 25 °C, I d
= 25 A, V dd
= 40 V.
Symbol
Table 3: Thermal data
Parameter
R thj-case
Thermal resistance junction-case max.
R thj-amb
Thermal resistance junction-ambient max.
Value
0.85
62.5
Value
80
±20
100
70
400
176
170
-55 to 175
Unit
°C/W
°C/W
Unit
V
V
A
A
A
W mJ
°C
°C
DocID026838 Rev 3 3/15
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off-states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0, I
D
= 250 µA
I
DSS
Zero-gate voltage drain current
V
GS
= 0, V
DS
= 80 V
V
GS
= 0, V
DS
= 80 V,
T
C
= 125 °C
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on- resistance
V
DS
= 0, V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 50 A
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd t f
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Symbol t d(on) t r t d(off)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
GS
= 0, V
DS
= 25 V, f = 1 MHz
V
DD
= 40 V, I
D
= 100 A,
V
GS
= 10 V (see Figure
14: "Test circuit for gate charge behavior" )
Table 6: Switching times
Test conditions
V
DD
= 40 V, I
D
= 50 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times" and
Figure 18: "Switching time waveform" )
Min.
80
-
-
-
-
2
Min.
-
-
-
STP100N8F6
Typ. Max. Unit
0.008 0.009
Typ.
5955
244
160
100
30
25
1
100
100
4
Max. Unit
-
- pF pF
-
-
- nC nC nC
Min. Typ. Max. Unit
-
-
-
33
46
103
-
-
- ns ns ns
21
-
-
V
µA
µA nA
V
Ω pF ns
4/15 DocID026838 Rev 3
STP100N8F6
Symbol Parameter
V
SD
(1)
Forward on voltage t
Q rr rr
Reverse recovery time
Reverse recovery charge
I
RRM
Reverse recovery current
Table 7: Source-drain diode
Test conditions Min.
Electrical characteristics
Typ. Max. Unit
- 1.2 V V
GS
= 0, I
SD
= 100 A
I
SD
= 100 A, di/dt = 100 A/µs
V
DD
= 64 V (see Figure
15: "Test circuit for inductive load switching and diode recovery times" )
-
-
-
38
63
3.3 ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID026838 Rev 3 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STP100N8F6
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
6/15
Figure 6: Normalized gate threshold voltage vs. temperature
Figure 7: Normalized V
(BR)DSS
vs. temperature
DocID026838 Rev 3
STP100N8F6
Figure 8: Static drain-source on-resistance
Electrical characteristics
Figure 9: Normalized on-resistance vs. temperature
Figure 10: Gate charge vs. gate-source voltage
Figure 11: Capacitance variations
Figure 12: Source-drain diode forward characteristics
DocID026838 Rev 3 7/15
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STP100N8F6
Figure 14: Test circuit for gate charge behavior
8/15
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID026838 Rev 3
STP100N8F6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID026838 Rev 3 9/15
Package information
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
STP100N8F6
10/15 DocID026838 Rev 3
STP100N8F6
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 8: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
16.40
28.90
3.75
2.65
Package information
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
DocID026838 Rev 3 11/15
Package information
4.2 TO-220 type H package information
Figure 20: TO-220 type H package outline
STP100N8F6
12/15 DocID026838 Rev 3
STP100N8F6
Dim.
E e e1
H1
L
L1
L2
L3
∅
P
Q b2 b4 b6 b7 c
D
D1
A
A1
A2
A3 b
Table 9: TO-220 type H package mechanical data
Package information mm
Min. Typ. Max.
0.49
15.40
9.05
10.08
2.44
4.98
6.25
13.20
3.50
16.30
28.70
3.75
2.70
4.40
1.22
2.49
1.17
0.78
1.25
1.20
4.45
2.59
1.27
15.50
9.15
10.18
2.54
5.08
6.35
13.40
3.70
16.40
28.90
3.80
2.80
4.50
1.32
2.69
1.37
0.87
1.34
1.29
1.50
1.45
0.56
15.60
9.25
10.28
2.64
5.18
6.45
13.60
3.90
16.50
29.10
3.85
2.90
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Revision history
5 Revision history
Date
02-Sep-2014
02-Dec-2014
08-Feb-2016
Revision
1
2
3
Table 10: Document revision history
Changes
STP100N8F6
Initial release.
Document status promoted from preliminary to production data.
Added the section of electrical characteristics (curves).
Minor text changes.
Added Section 4.2: "TO-220 type H package information" .
14/15 DocID026838 Rev 3
STP100N8F6
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