STS4DNFS30L
N-channel 30 V, 0.044
Ω
, 4 A SO-8
STripFET™ MOSFET plus SCHOTTKY rectifier
Features
MOSFET
SCHOTTKY
V
DSS
30V
I
F(AV)
3A
R
DS(on)
<0.056
Ω
V
RRM
30V
I
D
4A
V
F(MAX)
0.51V
■
■
■
Standard outline for easy automated surface mount assembly
Low threshold gate drive
Integrated SCHOTTKY rectifier
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET. It associates the latest low voltage STripFET™ in Nchannel version to a low drop Schottky diode.
Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
8
5
1
S0-8
4
Figure 1.
Internal schematic diagram
Obsolete Product(s) - Obsolete Product(s)
Table 1.
Device summary
Order code Marking Package Packaging
STS4DNFS30L 4DFS30L SO-8 Tape and reel
June 2011 Doc ID 8566 Rev 5 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STS4DNFS30L
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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2/13 Doc ID 8566 Rev 5
STS4DNFS30L Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (v gs
Drain-gate voltage (R
GS
Gate- source voltage
= 0)
= 20 k Ω )
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
= 100°C
Total dissipation at T
C
= 25°C dual operation
1.
Pulse width limited by safe operating area.
Table 3.
Symbol
Schottky absolute maximum ratings
Parameter
V
RRM
I
F(RMS)
I
I
I
I
F(AV)
FSM
RRM
RSM dv/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
TL=125°C
δ =0.5
tp = 10 ms
Sinusoidal
Repetitive peak reverse current tp = 2 µ s
F=1 kHz
Non repetitive peak reverse current
Critical rate of rise of reverse voltage tp = 100 µ s
Symbol
Thermal data
Parameter
R thj-a
Thermal resistance junction-ambient
MOSFET
(1)
T
J
T stg
Junction temperature
Storage temperature range
1.
Mounted on FR-4 board (steady state).
Doc ID 8566 Rev 5
Value
30
30
±16
4
2.5
16
2
Value
30
20
3
75
1
1
10000
Unit
V
A
A
A
A
A
V/ µ s
Value
62.5
-55 to 150
-55 to 150
Unit
°C/W
°C/W
°C
°C
3/13
Unit
A
W
A
A
V
V
V
Electrical characteristics STS4DNFS30L
(T
CASE
=25°C unless otherwise specified).
Table 5.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source
Breakdown voltage
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
I
GSS
GS(th)
R
DS(on)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
=Max rating,
T
C
=125°C
V
GS
= ±16V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
V
GS
= 5V, I
D
= 2A
Min.
Typ.
Max.
Unit
30
1
10
V
µA
µA
1
0.044
0.051
±100 nA
0.055
0.065
V
Ω
Ω
Table 6.
Symbol g fs
(1)
C iss
C oss
C rss
Dynamic
Parameter Test conditions
Forward transconductance V
DS
= 15V, I
D
=2A
Input capacitance
Output capacitance V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Reverse transfer capacitance
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
= 24V, I
D
= 5V
= 4A,
Min.
Typ.
Max.
Unit
5
330
90
S pF pF
40 pF
6.5
3.6
2
9 nC nC nC
Table 7.
Switching times Obsolete Product(s) - Obsolete Product(s)
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=15 V, I
D
=2A,
R
G
=4.7
Ω,
V
GS
=5V
(see Figure 13)
V
DD
=15 V, I
D
=2A,
R
G
=4.7
Ω, V
GS
=5V
(see Figure 13)
11
100
25
22 ns ns ns ns
4/13 Doc ID 8566 Rev 5
STS4DNFS30L Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 4A, V
GS
= 0
I
SD
= 4A, V
DD
= 15V di/dt = 100A/µs,
T j
= 150°C
(see Figure 15)
Min Typ.
Max Unit
4
16
1.2
A
A
V
35
25
1.4
ns nC
A
Obsolete Product(s) - Obsolete Product(s)
Doc ID 8566 Rev 5 5/13
Electrical characteristics
Figure 2.
Safe operating area Figure 3.
Thermal impedance
STS4DNFS30L
Figure 4.
Output characteristics Figure 5.
Transfer characteristics
Figure 6.
Transconductance Figure 7.
Static drain-source on resistance
Obsolete Product(s) - Obsolete Product(s)
6/13 Doc ID 8566 Rev 5
STS4DNFS30L Electrical characteristics
Figure 8.
Gate charge vs. gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
Obsolete Product(s) - Obsolete Product(s)
Doc ID 8566 Rev 5 7/13
Test circuit
3 Test circuit
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
STS4DNFS30L
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped Inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
Obsolete Product(s) - Obsolete Product(s)
8/13 Doc ID 8566 Rev 5
STS4DNFS30L
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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Doc ID 8566 Rev 5 9/13
Package mechanical data
Table 9.
Dim.
SO-8 mechanical data
Min.
L
L1 e h k ccc c
D
E
E1
A
A1
A2 b
0.10
1.25
0.28
0.17
4.80
5.80
3.80
0.25
0.40
0° mm
Typ.
4.90
6.00
3.90
1.27
1.04
STS4DNFS30L
Max.
1.75
0.25
0.48
0.23
5.00
6.20
4.00
0.50
1.27
8°
0.10
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10/13 Doc ID 8566 Rev 5
STS4DNFS30L
Figure 19.
SO-8 drawing
Package mechanical data
001602 3 _Rev_E
Obsolete Product(s) - Obsolete Product(s)
Doc ID 8566 Rev 5 11/13
Revision history
.
Table 10.
Document revision history
Date Revision
21-Jun-2004
10-Nov-2006
26-Jan-2007
29-Jun-2011
2
3
4
5
Changes
Complete version
The document has been reformatted
Typo mistakes on Table 2
.
Modified marking in
Table 1
.
Updated mechanical data.
STS4DNFS30L
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12/13 Doc ID 8566 Rev 5
STS4DNFS30L
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