STL70N10F3
N-channel 100 V, 0.0078 Ω , 16 A STripFET™ III Power MOSFET
in PowerFLAT™ 5x6 package
Datasheet — production data
Features
Order code V
DSS
STL70N10F3 100 V
R
DS(on)
@V
GS max
=10V
0.0084 Ω
I
D
P
TOT
16 A 136 W
■
■
■
Improved die-to-footprint ratio
Very low thermal resistance
Low on-resistance
1
2
3
4
PowerFLAT™ 5x6
Applications
■ Switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
Figure 1.
Internal schematic diagram
$ $ $ $
' 3 3 3
"OTTOM6IEW 4OP6IEW
!-6
Device summary
Order code
STL70N10F3
Marking
70N10F3
Package
PowerFLAT™ 5x6
Packaging
Tape and reel
May 2012
This is information on a product in full production.
Doc ID 018794 Rev 3 1/17 www.st.com
17
5
6
3
4
1
2
Contents
Contents
STL70N10F3
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Obsolete Product(s) - Obsolete Product(s)
2/17 Doc ID 018794 Rev 3
STL70N10F3 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
D
(2)
I
DM
(3),(2)
P
TOT
(1)
P
TOT
(2)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
T
J
T stg
Operating junction temperature
Storage temperature
1.
The value is rated according to R thj-c
.
2.
The value is rated according to R thj-pcb.
3.
Pulse width limited by safe operating area.
C
C
Total dissipation at T
C
= 25 °C
Total dissipation at T pcb
= 25 °C
= 25 °C
= 100 °C
Drain current (continuous) at T pcb
= 25 °C
Table 3.
Symbol
Thermal resistance
Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Value
100
± 20
82
58
16
64
136
4
-55 to 175
Unit
A
A
A
V
V
A
W
W
°C
Value
1.1
31
Unit
°C/W
°C/W
Avalanche data Table 4.
Symbol Parameter Value Unit
Not-repetitive avalanche current,
I
AV
E
AS
(starting T
J
= 25 °C, I
D
= I
AV
, V
DD
= 50 V)
16
(pulse width limited by Tj max)
Obsolete Product(s) - Obsolete Product(s)
770
A mJ
Doc ID 018794 Rev 3 3/17
Electrical characteristics STL70N10F3
(T
CASE
= 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on-resistance
Test conditions
V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 8 A
Min.
Typ.
I
D
= 250 µA, V
GS
= 0
V
DS
= 100 V,
V
DS
= 100 V, T
C
= 125 °C
100
-
-
2 -
-
-
-
Max.
Unit
-
10
100
± 200
4
0.0078
0.0084
V
µA
µA nA
V
Ω
Table 6.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 25 V, f=1 MHz,
V
GS
=0
V
DD
=50 V, I
D
= 16 A
V
GS
=10 V
(see Figure 15)
Min.
Typ.
Max.
Unit
-
-
3210
450
16
56
17
16
-
pF pF pF nC nC nC
Table 7.
Symbol
Switching times
Parameter Test conditions Min.
Typ.
Max.
Unit t d(on)
Turn-on delay time 17
V
DD
=50 V, I
D
= 8 A, t r t d(off) t f
Rise time
R
G
=4.7 Ω, V
GS
=10 V
11
-
Turn-off delay time
-
43 Obsolete Product(s) - Obsolete Product(s) ns ns ns ns
4/17 Doc ID 018794 Rev 3
STL70N10F3 Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%.
I
SD
= 16 A, V
GS
=0
I
SD
= 16 A, di/dt = 100 A/µs,
V
DD
=80 V
Min Typ.
Max.
Unit
-
-
-
-
-
-
-
56
144
5
16
64
1.2
-
A
A
V ns nC
A
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018794 Rev 3 5/17
Electrical characteristics STL70N10F3
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area
I
D
(A)
100 s a re a
i s
D
S
(on)
Oper a tion in thi b y m a x R
Limited
10
AM129 83 v1
Tj=175°C
Tc=25°C
S ingle p u l s e
Figure 3.
Thermal impedance
Zth_PowerFLAT 5x6
K
δ =0.5
0.2
10
-1
0.1
0.05
0.02
10
-2
0.01
1
0.1
10m s
100m s
1 s
10
3
Zthj-pc b =k* Rthj-pc b
0.01
0.1
1 10 V
D S
(V)
10
-4
10
-5
10
-4
S ingle p u l s e
10
3
10
-2
10
-1
10
0
10
1 t p
( s )
Figure 4.
Output characteristics up to
V
DS
= 10 V
AM129 8 4v1
I
D
(A)
V
G S
=10V
1 8 0
160
140
7V
Figure 5.
Output characteristics up to
V
DS
= 0.3 V
AM129 8 5v1
I
D
(A)
V
G S
=10V
1 8
6V
16
8 V
14
120 12
6V
100
8 0
10
8
60
40
20
0
0 1 2 3 4 5 6 7 8 9
5V
V
D S
(V)
6
4
2
0
0 0.05
0.1
0.15
0.2
0.25
V
D S
(V)
Figure 6.
Transfer characteristics Figure 7.
Static drain-source on-resistance
I
D
(A)
AM129 8 6v1 AM129 8 7v1
V
D S
=2V
R
D S (on)
(m
Ω
)
V
G S
=10V
1 8 0
8 .2
160
8 .0
Obsolete Product(s) - Obsolete Product(s)
120
7.
8
100
7.6
8 0
60
40
20
0
0 1 2 3 6 7 8
7.4
7.2
7.0
2 4 6 8 10 12 14 16 I
D
(A) 4 5 9 V
G S
(V)
6/17 Doc ID 018794 Rev 3
STL70N10F3 Electrical characteristics
Figure 8.
Gate charge vs. gate-source voltage
AM129 88 v1
V
G S
(V)
12
I
D
=16A
V
DD
=50V
Figure 9.
Capacitance variations
C
(pF)
10000
10
1000
8
AM129 8 9v1
Ci ss
Co ss
6
100
Cr ss
4
2
0
0 10 20 3 0 40 50 60 70 Q g
(nC)
10
1
0 20 40 60 8 0 100 V
D S
(V)
Figure 10.
Normalized gate threshold voltage vs. temperature
AM12990v1
V
G S (th)
(norm)
I
D
=250 µ A
1.2
Figure 11.
Normalized on-resistance vs. temperature
AM12991v1
R
D S (on)
(norm) I
D
= 8 A
V
G S
=10V
2.5
1.0
0.
8
0.6
2.0
1.5
1.0
25
0.5
0.4
0.2
-75 25
0
-75 25 -25 75 125 175 T
J
(°C) -25 75 125 175 T
J
(°C)
Figure 12.
Normalized B
VDSS
vs temperature Figure 13.
Source-drain diode forward characteristics
AM12992v1
BV
D SS
(norm)
V
S D
(V)
T
J
=-55°C
AM1299 3 v1
0.9
1.10
Obsolete Product(s) - Obsolete Product(s)
1.05
0.
8
T
J
=25°C
0.7
1.00
T
J
=175°C
0.6
0.95
0.5
0.90
-75
0.4
2 4 -25 75 125 175 T
J
(°C) 6 8 10 12 14 16 I
S D
(A)
Doc ID 018794 Rev 3 7/17
STL70N10F3 Test circuits
3 Test circuits
Figure 14.
Switching times test circuit for resistive load
Figure 15.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 16.
Test circuit for inductive load switching and diode recovery times
Figure 17.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 18.
Unclamped inductive waveform Figure 19.
Switching time waveform
AM01471v1 t on t off V
(BR)D SS t r
V
D
Obsolete Product(s) - Obsolete Product(s)
90 %
90 %
I
DM td on td off t f
10 %
10 % V
D S
I
D 0
V
DD
V
DD
90 %
V
G S
0
10 %
AM01472v1 AM0147 3 v1
8/17 Doc ID 018794 Rev 3
STL70N10F3
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
b
D
D1
D2
E
A
A1
A3
E1
E2
E4 e
L
Table 9.
Dim.
PowerFLAT™ 5x6 type C-B mechanical data mm
Min.
0.80
0
0.35
4.15
3.43
2.58
0.70
Typ.
0.83
0.02
0.20
0.40
5.00
4.75
4.20
6.00
5.75
3.48
2.63
1.27
0.80
Max.
0.93
0.05
0.47
4.25
3.53
2.68
0.90
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018794 Rev 3 9/17
Package mechanical data
Figure 20.
PowerFLAT™ 5x6 type C-B drawing
Bottom View e/2
1 e
PIN 1 IDENTIFICATION
EXPO S ED PAD
E4
E2 b 8 x
D2/2
D2
Top View
D/2
E/2
E1 E
STL70N10F3
PIN 1 IDENTIFICATION 1
D1
D
0.1
C
A 3
S EATING PLANE
A A1
C
0.0
8 C Obsolete Product(s) - Obsolete Product(s)
72 8 646 3 _Rev_H
10/17 Doc ID 018794 Rev 3
STL70N10F3
Table 10.
PowerFLAT™ 5x6 type S-C mechanical data mm
Dim.
Min.
Typ.
A
A1
A2 b
D
E
D2
E2 e e1
L
K
0.80
0.02
0.30
4.11
3.50
0.715
1.05
0.25
5.20
6.15
1.27
0.65
Package mechanical data
Max.
1.00
0.05
0.50
4.31
3.70
1.015
1.35
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018794 Rev 3 11/17
Package mechanical data
Figure 21.
PowerFLAT™ 5x6 type S-C mechanical data
"OTTOMVIEW 4OPVIEW
STL70N10F3
3IDEVIEW
?$?TYPE#
Obsolete Product(s) - Obsolete Product(s)
12/17 Doc ID 018794 Rev 3
STL70N10F3 Package mechanical data
Figure 22.
PowerFLAT™ 5x6 recommended footprint (dimensions in mm)
5.
3 5
4.41
1.27
0.62
Footprint
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018794 Rev 3 13/17
Packaging mechanical data STL70N10F3
Figure 23.
PowerFLAT™ 5x6 tape
T
(0.
3 0 ±0.05)
Do
Ø1.55±0.05
D1
Ø1.5 MIN.
Y
P 2
2.0±0.1 (I)
REF 0.20
P 0
4.0±0.1 (II)
E 1
1.75±0.1
REF
.R0.50
Y
P1( 8 .00±0.1) Ao(6.
3 0±0.1)
S ECTION Y-Y
Ko (1.20±0.1)
(I)
(II)
Me asu red from centerline of s procket hole to centerline of pocket.
C u m u l a tive toler a nce of 10 s procket hole s i s ± 0.20 .
(III) Me asu red from centerline of s procket hole to centerline of pocket.
B as e a nd bu lk qua ntity 3 000 pc s
All dimen s ion s a re in millimeter s
Figure 24.
PowerFLAT™ 5x6 package orientation in carrier tape.
8 2 3 4 3 50_T a pe_rev_C
Obsolete Product(s) - Obsolete Product(s)
14/17 Doc ID 018794 Rev 3
STL70N10F3
Figure 25.
PowerFLAT™ 5x6 reel
R0.60
PART NO.
1.90
2.50
W 3
11.9/15.4
W2
1 8 .4 (m a x)
R25.00
4.00
ØN
17 8 (±2.0)
2.50
77
W1
12.4 (+2/-0)
06
S
P
12
8
ØA
E S D LOGO
Packaging mechanical data
A
33 0 (+0/-4.0)
Ø21.2
R1.10
1 3 .00
CORE DETAIL
All dimen s ion s a re in millimeter s
8 2 3 4 3 50_Reel_rev_C
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018794 Rev 3 15/17
Revision history STL70N10F3
Table 11.
Document revision history
Date Revision
02-Dec-2011
13-Jan-2012
29-May-2012
1
2
3
Changes
First release.
R
DS(on)
values have been changed (see Table 5: On/off states
).
Document status promoted from preliminary data to production data.
Obsolete Product(s) - Obsolete Product(s)
16/17 Doc ID 018794 Rev 3
STL70N10F3
----
----
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