STF15NM65N(045Y)
*
N-channel 650 V, 0.35
Ω
typ., 12 A MDmesh™ II
Power MOSFET in a TO-220FP narrow leads package
Datasheet
-
production data
1
2
3
TO-220FP narrow leads
Figure 1. Internal schematic diagram
'
Features
Order code
STF15NM65N(045Y)
V
DS
710 V
R
DS(on) max I
D
0.38
Ω
12 A
•
•
•
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
•
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
6
$0Y
Order code
STF15NM65N(045Y)
Marking
15NM65N
Packages
TO-220FP narrow leads
Packaging
Tube
April 2014
This is information on a product in full production.
DocID022772 Rev 3 1/12 www.st.com
3
4
5
1
2
Contents
Contents
STF15NM65N(045Y)
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)
2/12 DocID022772 Rev 3
STF15NM65N(045Y) Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(2)
P
TOT dv\dt
(3)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
=100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T C = 25 °C)
T
J
T stg
Operating junction temperature
Storage temperature
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
I
SD
£ 12 A, di/dt
≤
400 A/ μ s, V
DSpeak
≤
V
(BR)DSS,
V
DD
= 80 % V
(BR)DSS
.
Value
2500
-65 to 150
650
±25
12
(1)
7.56
48
30
15
Symbol
Table 3. Thermal data
Parameter
R thj-case
Thermal resistance junction-case max
R thj-a
Thermal resistance junction-ambient max
Value
4.17
62.5
°C
Unit
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter Value Unit
I
AS
3
Avalanche current, repetitive or not-repetitive (pulse width limited by T j max
)
Single pulse avalanche energy
187 E
AS
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Obsolete Product(s) - Obsolete Product(s) mJ
A
Unit
V
V
A
A
A
W
W/°C
V
DocID022772 Rev 3 3/12
12
Electrical characteristics STF15NM65N(045Y)
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 5. On/off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 l
DSS l
GSS
V
GS(th)
R
DS(on)
Zero gate voltage drain current (V
GS
=0)
V
DD
= 650 V
V
DD
= 650 V,T
C
= 125 °C
Gate body leakage (V
DS
=0) V
GS
= ±25 V
Gate threshold voltage I
D
=250 μ A, V
GS=
V
DS
Static R
DS(on)
-resistance I
D
=6 A, V
GS
=10V
Min.
Typ.
Max.
Unit
650
2
V
3
0.35
1
4
0.38
μ A
100 μ A
±100 nA
V
Ω
Symbol Parameter
Table 6. Dynamic
Test conditions Min.
Typ.
Max.
Unit
C iss
C oss
Input capacitance
Output capacitance V
DS
=50 V, f=1MHz, V
GS
=0
C rss
C osseq
(1)
Reverse capacitance
Equivalent out. capacitance V
DS
=0 V to V
GS
=0
Intrinsic gate resistance f=1 MHz open drain R g
Q g
Q gs
Total gate charge
Gate source charge
V
DD
=520 V, I
V
GS
=10 V
D
=12 A,
Q gd
Gate-drain charge
1.3
983
57
4.5
146
4.6
33.3
5.7
17
8 pF pF pF pF
Ω nC nC nC
1.
Cross eq: defined as a constant equivalent capacitance giving the same charging time as C
OSS
when V
DS increases from 0 to 80 % V
DSS.
Table 7. Switching times
Symbol t d(on)
Parameter
Turn-on delay time
Test conditions Min.
Typ.
Max.
Unit
55.5
ns
Rise time 8.5
ns t r t d(off) t f
Turn-off-delay time
Fall time
V
DD
=325 V, I
D
=6 A
R
G
=4.7
Ω,
V
GS
=10 V
-
14
11.4
-
ns ns
4/12 DocID022772 Rev 3
STF15NM65N(045Y) Electrical characteristics
Symbol Parameter
Table 8. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Source drain current
Source drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
I
I
SD
SD
= 12 A, V di/dt = 100 A/
V
= 12 A,
DD
= 60 V
GS
μ s
= 0 V
Q rr
I
RRM
Reverse recovery charge
Reverse recovery current
I
SD
=12 A, di/dt=100 A/ μ s
V
DD
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration = 300 μ s, duty cycle 1.5 %
=60 V, Tj=150 °C
-
-
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
12
48
1.6
428
4.7
21.5
570
6.2
22 ns nC
A ns
A
A
V nC
A
Obsolete Product(s) - Obsolete Product(s)
DocID022772 Rev 3 5/12
12
Electrical characteristics STF15NM65N(045Y)
I
D
(A)
Figure 2. Safe operating area
AM10307v1
10
1
Oper
Limited b
0.1
DS(on)
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
Figure 3. Thermal impedance
0.01
0.1
1 10 100 V
DS
(V)
Figure 4. Output characteristics
AM10308v1
I
D
(A)
V
GS
=10V
25
6V
20
Figure 5. Transfer characteristics
AM10309v1
I
D
(A)
25
20
V
DS
=19V
15 15
10 10
5V
5 5
0
0 2 4 6 8 10 12 14 16 18 20 22 V
DS
(V)
0
0 2 4 6 8 10 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
( Ω )
0.365
0.360
V
GS
=10V
AM10311v1
Figure 7. Gate charge vs gate-source voltage
AM03195v1
V
GS
(V)
V
DD
=480V
12
I
D
=12A
500
V
DS
10
400
8
0.350
300
6
0.345
200
0.340
4
100
0.335
2
0.330
0 2 4 6 8 10 12 I
D
(A)
0
0 5 10 15 20 25
0
Q g
(nC)
6/12 DocID022772 Rev 3
STF15NM65N(045Y) Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM10313v1
Figure 9. Normalized gate threshold voltage vs temperature
AM10314v1
V
GS(th)
(norm)
1.10
I
D
=250µA
1000
Ciss
1.00
100
Coss
10
Crss
1
0.1
1 10 100 V
DS
(V)
Figure 10. Normalized on-resistance vs temperature
AM10315v1
R
DS(on)
(norm)
2.1
I
D
=6A
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 T
J
(°C)
0.90
0.80
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 11. Source-drain diode forward characteristics
AM10316v1
V
SD
(V)
1.4
T
J
=-50°C
1.2
T
J
=25°C
1.0
0.8
T
J
=150°C
0.6
0.4
0.2
0
0 2 4 6 8 10 12 I
SD
(A)
Figure 12. Normalized V
(BR)DSS
vs temperature
AM10310v1
V
(BR)DSS
(norm)
1.07
I
D
=1mA
1.05
Obsolete Product(s) - Obsolete Product(s)
1.01
0.99
0.97
0.95
0.93
-50 -25 0 25 50 75 100 125 T
J
(°C)
DocID022772 Rev 3 7/12
12
STF15NM65N(045Y) Test circuits
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3.3
μ F
V
DD
P w
AM01470v1 AM01471v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
Figure 18. Switching time waveform t on td on t r t off td off t f
Obsolete Product(s) - Obsolete Product(s)
I
DM
90%
90%
10%
10% V
DS
I
D 0
V
DD
V
DD
90%
V
GS
0
10%
AM01472v1 AM01473v1
8/12 DocID022772 Rev 3
STF15NM65N(045Y)
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
DocID022772 Rev 3 9/12
12
Package mechanical data
Figure 19. TO-220FP narrow leads drawing
STF15NM65N(045Y)
8197858_Rev_B
Dim.
Table 9. TO-220FP narrow leads mechanical data mm
Min.
Typ.
Max.
F
F1
G
G1
A
B
D
E
4.4
2.5
2.5
0.45
0.75
0.95
4.95
2.4
4.6
2.7
2.75
0.7
1
1.20
5.2
2.7
H
L2
10
15.20
10.4
15.60
L3 28.6
30.6
L4 10.3
11.1
L5
L6
L7
∅
2.60
15.8
9
3
2.70
16.0
2.90
16.2
9.3
3.2
10/12 DocID022772 Rev 3
STF15NM65N(045Y) Revision history
Date
03-Feb-2012
05-Mar-2012
24-Apr-2014
Table 10. Document revision history
Revision Changes
1
2
3
Initial release.
Updated R g
in
Table 6
.
– Updated:
Figure 13
,
14
,
15
and
16
– Updated:
Section 4: Package mechanical data
– Minor text changes
Obsolete Product(s) - Obsolete Product(s)
DocID022772 Rev 3 11/12
12
STF15NM65N(045Y)
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