STF9NM60N(045Y)
N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFET
in a TO-220FP narrow leads package
Datasheet
−
preliminary data
1
2
3
TO-220FP narrow leads
Features
Order code V
DS
R
DS(on) max
I
D
P
TOT
STF9NM60N(045Y) 650 V 0.745 Ω 6.5 A 25 W
•
100% avalanche tested
•
Low input capacitance and gate charge
•
Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
*
'7$%
Description
This device is an N-channel Power MOSFET developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
6
$0Y
Order code
STF9NM60N(045Y)
Table 1. Device summary
Marking Package
9NM60N TO-220FP narrow leads
Packaging
Tube
April 2013 DocID024553 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STF9NM60N(045Y)
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 DocID024553 Rev 1
STF9NM60N(045Y) Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
V
V
I
DS
GS
D
I
D
I
DM
(2)
P
TOT
ISO
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1 s;T
C
=25 °C)
Peak diode recovery voltage slope dv/dt
(3)
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Limited only by maximum temperature allowed
2.
Pulse width limited by safe operating area
3.
I
SD
≤
6.5 A, di/dt
≤
400 A/µs, V
DD
= 80% V
(BR)DSS
2500
15
- 55 to 150
150
Value
600
± 25
6.5
(1)
4
(1)
26
(1)
25
Symbol
R thj-case
R thj-amb
T l
Table 3. Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
5
62.5
300
Symbol
I
AR
E
AS
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j max
)
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
2.5
115
V
V/ns
°C
°C
Unit
A
A
W
V
V
A
Unit
°C/W
°C/W
°C
Unit
A mJ
DocID024553 Rev 1 3/12
Electrical characteristics STF9NM60N(045Y)
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Table 5. On/off states
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 600 V
V
DS
= 600 V, T
C
=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 3.25 A
Min.
Typ.
Max.
Unit
600
2
V
1
100
µA
µA
100 nA
3 4 V
0.63
0.745
Ω
Table 6. Dynamic
Test conditions Symbol Parameter Min.
Typ.
Max. Unit
C iss
C
C oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
C oss eq.
(1)
Equivalent output catacitance
V
V
V
DS
GS
GS
= 50 V, f = 1 MHz,
= 0
= 0, V
DS
= 0 to 480 V
-
-
-
-
452
30
1.45
79
-
-
-
pF pF pF pF
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 480 V, I
= 10 V,
D
(see Figure 14)
= 6.5 A,
-
-
17.4
3
9.7
-
-
nC nC nC
R g
Gate input resistance f=1 MHz Gate DC Bias=0
Test signal level=20 mV open drain
4.8
-
1.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DS
.
when V
DS
Ω
4/12 DocID024553 Rev 1
STF9NM60N(045Y) Electrical characteristics
Symbol t d(on) t r t d(off) t f
Parameter
Table 7. Switching times
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 480 V, I
D
= 6.5 A
R
G
= 4.7 Ω V
GS
= 10 V
(see Figure 13)
Min.
Typ.
Max. Unit
-
-
-
-
28
23
52.5
26.7
-
-
-
ns ns ns ns
Symbol Parameter
Table 8. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Source-drain current
Source-drain current (pulsed)
Forward on voltage I
SD
= 6.5 A, V
GS
= 0
Q rr
I
RRM t
Q rr rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
I
SD
= 6.5 A, di/dt = 100 A/µs
V
DD
= 60 V
(see Figure 18)
I
RRM
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 6.5 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 18)
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
-
-
-
264
1.9
14.6
324
2.3
14.2
6.5
26
1.6
A
A
V ns
µC
A ns
µC
A
DocID024553 Rev 1 5/12
Electrical characteristics STF9NM60N(045Y)
2.1
I
D
(A)
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
AM08164v1
10
1
Oper
Limited b
DS(on)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
1 10 100 V
DS
(V)
Figure 4. Output characteristics
AM08165v1
I
D
(A)
12
V
GS
=10V
10
6V
8
6
4
5V
2
0
0 5 10 15 20 25 30 V
DS
(V)
Figure 5. Transfer characteristics
I
D
(A)
12
10
8
6
4
2
0
0
V
DS
=20V
AM08166v1
2 4 6 8 10 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM08167v1
V
GS
(V)
V
DS V
DD
=480V
V
GS
12
I
D
=6.5A
500
Figure 7. Static drain-source on resistance
R
DS(on)
(
Ω
)
0.66
V
GS
=10V
AM08168v1
0.65
10
400
0.64
8
300 0.63
6
0.62
200
4
0.61
2
100
0.60
0
0 5 10 15 20
0
Q g
(nC)
0.59
0 1 2 3 4 5 6 I
D
(A)
6/12 DocID024553 Rev 1
STF9NM60N(045Y) Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM08169v1
Figure 9. Output capacitance stored energy
AM08170v1
E oss
(µJ)
3.5
1000 3
Ciss
100
10
1
0.1
1 10 100
Coss
Crss
V
DS
(V)
2.5
2
1.5
1
0.5
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM08171v1
V
GS(th)
(norm)
1.10
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 11. Normalized on resistance vs temperature
AM08172v1
R
DS(on)
(norm)
2.1
I
D
=3.25A
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 12. Normalized B
VDSS
vs temperature
AM08173v1
BV
DSS
(norm)
I
D
=1mA
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0 25 50 75 100 T
J
(°C)
DocID024553 Rev 1 7/12
Test circuits
3 Test circuits
STF9NM60N(045Y)
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ
F
I
G
=CONST
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ
F
1000
μ
F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ
F
3.3
μ
F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/12 DocID024553 Rev 1
STF9NM60N(045Y)
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID024553 Rev 1 9/12
Package mechanical data
Dim.
F
F1
G
G1
H
L2
A
B
D
E
L3
L4
L5
L6
L7
Dia
STF9NM60N(045Y)
Table 9. TO-220FP narrow leads mechanical data mm
Typ.
Min.
4.4
2.5
2.5
0.45
0.75
0.95
4.95
2.4
10
15.20
28.6
10.3
2.60
15.8
9
3
2.70
16.0
Figure 19. TO-220FP narrow leads drawing
Max.
4.6
2.7
2.75
0.7
1
1.20
5.2
2.7
10.4
15.60
30.6
11.1
2.90
16.2
9.3
3.2
10/12 DocID024553 Rev 1
8197858_Rev_B
STF9NM60N(045Y)
Date
16-Apr-2013
Revision
Table 10. Document revision history
Changes
1 First release.
Revision history
DocID024553 Rev 1 11/12
STF9NM60N(045Y)
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