STI300N4F6
N-channel 40 V, 1.7 m Ω typ., 160 A, STripFET™ VI DeepGATE™
Power MOSFET in a I²PAK package
Datasheet — production data
Features
Order code
STI300N4F6
V
DS
40 V
1.
Limited by wire bonding
■
■
Standard level V
GS(th)
100% avalanche rated
R
DS(on) max
2.2 m Ω
I
D
160 A
(1)
I²PAK
1
2
3
Applications
■ Automotive switching applications
Description
This device is an N-channel Power MOSFET developed using the 6 th
generation of STripFET™
DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R
DS(on)
in all packages.
Figure 1.
Internal schematic diagram
D (TAB or 2)
G(1)
Table 1.
Device summary
Order code
STI300N4F6
Marking
300N4F6
Package
I²PAK
S ( 3 )
Packaging
Tube
AM01474v1
February 2013
This is information on a product in full production.
Doc ID 18062 Rev 2 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STI300N4F6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 18062 Rev 2
STI300N4F6 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25 °C
= 100 °C
I
E
AV
AS
Total dissipation at T
C
= 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j max
)
Single pulse avalanche energy
(starting T
J
=25 °C, I
D
=I
AV
, V
DD
=35 V)
Storage temperature T stg
T j
Operating junction temperature
1.
Limited by wire bonding
2.
Pulse width limited by safe operating area
Table 3.
Symbol
R thj-case
R thj-amb
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
40
± 20
160
160
640
300
160
1100
- 55 to 175
Unit
A
A
A
V
V
W
A mJ
°C
Value
0.5
62.5
Unit
°C/W
Doc ID 18062 Rev 2 3/13
Electrical characteristics STI300N4F6
(T
J
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage (V
GS
=0)
I
DSS
Zero gate voltage drain current
V
I
GSS
GS(th)
R
DS(on)
Gate-source leakage current
Gate threshold voltage
Static drain-source on- resistance
I
D
= 250 µA
V
DS
= 40 V,
V
DS
= 40 V, T
C
=125 °C
V
GS
= ±20 V, V
DS
= 0
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 80 A
Table 5.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
=25 V, f = 1 MHz,
V
GS
= 0
V
DD
= 20 V, I
D
= 160 A
V
GS
=10 V
(see
Figure 14 )
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 20 V, I
D
= 80 A,
R
G
=4.7 Ω, V
GS
=10 V
(see
Figure 13
)
Min.
Typ.
Max. Unit
40
2
V
1
100
µA
µA
100 nA
4 V
1.7
2.2
m Ω
Min.
Typ.
Max. Unit
-
-
13800
1870
1095
240
59
75.2
-
nF nF nF nC nC nC
Min.
Typ.
Max.
Unit
-
28
98
190
95
ns ns ns ns
4/13 Doc ID 18062 Rev 2
STI300N4F6 Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
I
I
SD
SDM
(1)
V
SD
(2) t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 160 A, V
GS
= 0
I
SD
= 160 A, di/dt = 100 A/µs,
V
DD
= 32 V, T
J
= 25 °C
(see Figure 15
)
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min.
Typ.
Max Unit
-
-
-
-
160
640
1.1
A
A
V
-
58.7
99.2
3.38
ns nC
A
Doc ID 18062 Rev 2 5/13
Electrical characteristics STI300N4F6
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area
I
D
(A)
AM15605v1
Figure 3.
Thermal impedance
K
δ
=0.5
100
10 a
i s s a re
D
S
(on) a tion in thi a x R
Oper
Limited
100 µs
1m s
10m s
10
-1
0.05
0.02
0.01
AM15606v1
S ingle p u l s e
1
Tj=175°C
Tc=25°C
S ingle p u l s e
0.1
0.1
1 10 V
D S
(V)
10
-2
10
-5
10
-4
10
3
10
-2 10
-1 t p
( s )
Figure 4.
Output characteristics
I
D
(A)
VG
S
= 7, 8 , 9, 10 V
3 50
3 00
250
VG
S
= 6 V
AM15607v1
Figure 5.
Transfer characteristics
I
D
(A)
400
VD
S
= 1 V
3 50
3 00
250
200 200
150
VG
S
= 5 V
150
100
50
0
0 0.2
0.4
0.6
VG
S
= 4 V
0.
8 V
D S
(V)
100
50
0
2 3 4 5 6
AM1560 8 v1
V
G S
(V)
Figure 6.
Gate charge vs gate-source voltage Figure 7.
Static drain-source on-resistance
AM15609v1 AM15610v1
V
G S
(V)
12
V
D S V
DD
=20V
I
D
=160A
R
D S (on)
(m
Ω
)
1.
8
10 1.6
8
1.4
6
1.2
4 1.0
2
0
0 50 100 150 200 250 Q g
(nC)
0.
8
0.6
0 20 40 60 8 0 I
D
(A)
6/13 Doc ID 18062 Rev 2
STI300N4F6 Electrical characteristics
Figure 8.
Capacitance variations
C
(pF)
16100
14100
12100
10100
8 100
6100
4100
2100
100
0 10 20 3 0 40
AM15611v1
Figure 9.
Drain-source diode forward characteristics
V
S D
(V)
T
J
=-55°C
AM15612v1
Ci ss
Co ss
Cr ss
V
D S
(V)
0.
8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.
3 5
0.
3
0 20
T
J
=25°C
T
J
=175°C
40 60 8 0 I
S D
(A)
Figure 10.
Normalized gate threshold voltage vs temperature
AM1561 3 v1 V
G S (th)
(norm)
1.2
Figure 11.
Normalized on-resistance vs temperature
AM15614v1
R
D S (on)
(norm)
1.
8
1.6
V
G S
=10V
I
D
= 8 0A
I
D
=250 µ A
1 1.4
0.
8
0.6
0.4
0.2
0
-75 -50 -25 0 25 50 75 100 125150 T
J
(°C)
1.2
1
0.
8
0.6
0.4
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 T
J
(°C)
Figure 12.
Normalized B
VDSS
vs temperature
AM15615v1
V
D S
(norm)
1.1
1.0
8
I
D
= 1mA
1.06
1.04
1.02
1
0.9
8
0.96
0.94
0.92
-75 -50 -25 0 25 50 75 100 125 150 T
J
(°C)
Doc ID 18062 Rev 2 7/13
Test circuits
3 Test circuits
STI300N4F6
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 17.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 18.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/13 Doc ID 18062 Rev 2
STI300N4F6
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Doc ID 18062 Rev 2 9/13
Package mechanical data c c2
D e e1
E
L
L1
L2
A
A1 b b1
Table 8.
DIM.
I²PAK (TO-262) mechanical data min.
0.49
1.23
8.95
2.40
4.95
10
4.40
2.40
0.61
1.14
13
3.50
1.27
mm.
typ
STI300N4F6 max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
10/13 Doc ID 18062 Rev 2
STI300N4F6
Figure 19.
I²PAK (TO-262) drawing
Package mechanical data
00049 8 2_Rev_H
Doc ID 18062 Rev 2 11/13
Revision history STI300N4F6
Table 9.
Date
Document revision history
Revision
05-Oct-2010
01-Feb-2013
1
2
Changes
First release
– Added:
Section 2.1: Electrical characteristics (curves)
– Minor text changes
– Updated:
Section 4: Package mechanical data
12/13 Doc ID 18062 Rev 2
STI300N4F6
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Doc ID 18062 Rev 2 13/13
