STF1N105K3, STFW1N105K3,
STP1N105K3
N-channel 1050 V, 8
Ω
typ., 1.4 A SuperMESH3™
Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
Datasheet — production data
Features
Order codes V
DS
R
DS(on) max
I
D
P
TOT
STF1N105K3
STFW1N105K3 1050 V
STP1N105K3
11
Ω
1.4 A
■
■
■
■
Gate charge minimized
Extremely large avalanche performance
100% avalanche tested
Very low intrinsic capacitance
20 W
60 W
Applications
■
Switching applications
TAB
1
2
3
TO-220FP
TO-220
1
2
3
TO-3PF
1
2
3
Figure 1.
Internal schematic diagram
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to
STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
*
'
6
$0Y
Table 1.
Device summary
Order codes
STF1N105K3
STFW1N105K3
STP1N105K3
Marking
1N105K3
Package
TO-220FP
TO-3PF
TO-220
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 023509 Rev 2 1/18 www.st.com
18
3
4
5
1
2
Contents
Contents
STF1N105K3, STFW1N105K3, STP1N105K3
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3 Electrical ratings
.
Table 2.
Absolute maximum ratings
Symbol Parameter
Value
TO-220FP TO-3PF TO-220
V
DS
V
GS
I
D
I
D
I
DM
(2)
P
E
V
I
TOT
AR
AS
ISO
Drain source voltage
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche (pulse width limited by
T jmax
)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
IAR
, V
DD
= 50 V)
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
1.4
0.9
5.6
(1)
(1)
(1)
20
1050
± 30
1.2
130
3500 dv/dt
(3)
Peak diode recovery voltage slope 6
T j
T stg
Operating junction temperature
Storage temperature
- 55 to 150
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
I
SD
≤
1.4 A, di/dt
≤
100 A/ μ s, V
DD
= 80% V
(BR)DSS
, V
DS
peak
≤
V
(BR)DSS.
1.4
0.9
5.6
60
Unit
A mJ
V
V/ns
°C
A
A
V
V
A
W
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Value
TO-220FP TO-3PF TO-220
6.25
62.50
50
2.08
62.50
Unit
°C/W
°C/W
Doc ID 023509 Rev 2 3/18
Electrical characteristics STF1N105K3, STFW1N105K3, STP1N105K3
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0
I
I
DSS
GSS
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage V
GS(th)
R
DS(on)
Static drain-source on- resistance
V
DS
= 1050 V,
V
DS
= 1050 V, Tc=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 50 μ A
V
GS
= 10 V, I
D
= 0.6 A
Min.
Typ.
Max.
Unit
1050
2 3
8
1
50
V
μ A
μ A
±50 μ A
4.5
11
V
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C iss
C oss
Input capacitance
Output capacitance
180
15 pF pF
V
DS
=100 V, f=1 MHz, V
GS
=0 -
C rss
Reverse transfer capacitance
1 pF
C o(tr)
(1)
C o(er)
(2)
Equivalent capacitance time related
V
GS
= 0, V
DS
= 0 to 840 V
Equivalent capacitance energy related
-
11
7 -
pF pF
R
G
Q g
Q gs
Q gd
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge f = 1 MHz open drain
V
DD
V
GS
(see
= 840 V, I
=10 V
Figure 18
D
)
= 1.2 A
-
18
13
1.6
8
-
-
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when
V
DS
increases from 0 to 80% V
DSS
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V
DS
increases from 0 to 80% V
DSS
Ω nC nC nC
4/18 Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
V
DD
= 525 V, I
D
= 0.6 A,
R
G
=4.7
Ω
, V
GS
=10 V
(see Figure 20
)
Min.
Typ.
Max.
Unit
-
6
7
27
50
ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
V
SD
(1) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
I
SD
= 1.2 A, V
GS
= 1.2 A, V
DD di/dt = 100 A/ μ s,
(see
Figure 19 )
=0
= 60 V
I
SD
= 1.2 A,V
DD
= 60 V di/dt=100 A/ μ s,
Tj=25 °C
(see
Figure 19 )
1.
Pulsed: pulse duration = 300 μ s, duty cycle 1.5%
Min.
Typ.
Max.
Unit
-
-
-
-
1.4
5.6
1.5
244
1
9
330
1.3
8 mA
A
V ns
μ
C
A ns
μ
C
A
Doc ID 023509 Rev 2 5/18
Electrical characteristics STF1N105K3, STFW1N105K3, STP1N105K3
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP and TO-3PF
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Figure 3.
Thermal impedance for TO-220FP and TO-3PF
V
V
PV
PV 7M &
7F &
6LQJOH
SXOVH
9
'6
9
Figure 4.
Safe operating area for TO-220
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,
'
$
Figure 5.
Thermal impedance for TO-220
V
V
'6RQ
PV
PV
7M &
7F &
6LQJOH
SXOVH
9 '6 9
Figure 6.
Output characteristics
, ' $
9
*6
ĆĆĆĆ9
$0Y
Figure 7.
Transfer characteristics
,
' $
9 '6 9
$0Y
9
9
9 '6 9
Doc ID 023509 Rev 2 6/18
9 *6 9
STF1N105K3, STFW1N105K3, STP1N105K3 Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on-resistance
9
*6
9
$0Y
9
'6
9
5 '6RQ
2KP
$0Y
9 '' 9
9 *6 9
, ' $
9 '6
Figure 10.
Capacitance variations
&
S)
4 J Q& , ' $
$0Y
Figure 11.
Output capacitance stored energy
$0Y
( RVV
-
&LVV
&RVV
&UVV
9 '6 9 9 '6 9
Figure 12.
Normalized gate threshold voltage vs temperature
$0Y
9 *6WK
QRUP
Figure 13.
Normalized on-resistance vs temperature
5 '6RQ
QRUP
$0Y
, ' Ć$
9
*6
9
, ' $
7 &
Doc ID 023509 Rev 2
7 &
7/18
Electrical characteristics STF1N105K3, STFW1N105K3, STP1N105K3
Figure 14.
Source-drain diode forward characteristics
$0Y
9 6' 9
Figure 15.
Normalized B
VDSS
vs temperature
%9 '66
QRUP
$0Y
7
-
&
, ' ĆP$
7 &
7 &
, 6' $
Figure 16.
Maximum avalanche energy vs starting Tj
$0Y
( $6 P-
, ' Ć$
9 '' Ć9
7 &
7 &
8/18 Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
3 Test circuits
Test circuits
Figure 17.
Switching times test circuit for resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM01468v1 AM01469v1
Figure 19.
Test circuit for inductive load switching and diode recovery times
Figure 20.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3.3
μ F
V
DD
P w
AM01470v1
Figure 21.
Unclamped inductive waveform
V
(BR)DSS
V
D
Figure 22.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
Doc ID 023509 Rev 2 9/18
Package mechanical data
4 Package mechanical data
STF1N105K3, STFW1N105K3, STP1N105K3
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
10/18 Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
L4
L5
L6
L7
Dia
G1
H
L2
L3
F
F1
F2
G
A
B
D
E
Table 8.
Dim.
TO-220FP mechanical data
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3 mm
Typ.
16
Package mechanical data
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
Doc ID 023509 Rev 2 11/18
Package mechanical data
Figure 23.
TO-220FP drawing
STF1N105K3, STFW1N105K3, STP1N105K3
12/18 Doc ID 023509 Rev 2
7012510_Rev_K_B
STF1N105K3, STFW1N105K3, STP1N105K3
L3
L4
L5
L6
G1
H
L
L2
L7
N
R
Dia
E
F
F2
G
A
C
D
D1
Table 9.
Dim.
TO-3PF mechanical data
Min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
mm
Typ.
5.45
10
Package mechanical data
Max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
Doc ID 023509 Rev 2 13/18
Package mechanical data
Figure 24.
TO-3PF drawing
L3
L
A
C
Dia
L2
H
L5
STF1N105K3, STFW1N105K3, STP1N105K3
D1
D
E
L6
F2(3x)
L7
F(3x)
G1
G
R
L4
N
7627132_C
14/18 Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Table 10.
TO-220 type A mechanical data
Dim.
J1
L
L1
L20 e e1
F
H1 c
D
D1
E
A b b1
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Min.
4.40
0.61
1.14
0.48
15.25
3.75
2.65
mm
Typ.
1.27
16.40
28.90
Package mechanical data
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
Doc ID 023509 Rev 2 15/18
Package mechanical data
Figure 25.
TO-220 type A drawing
STF1N105K3, STFW1N105K3, STP1N105K3
0015988_typeA_Rev_S
16/18 Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Table 11.
Document revision history
Date Revision
13-Aug-2012
23-Jan-2013
1
2
First release.
Added device in TO-3PF.
Changes
Revision history
Doc ID 023509 Rev 2 17/18
STF1N105K3, STFW1N105K3, STP1N105K3
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18/18 Doc ID 023509 Rev 2
