STF40N60M2, STFI40N60M2,
STFW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2
Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
Datasheet − production data
Features
Order codes
VDS @ TJmax
RDS(on) max
ID
650 V
0.088 Ω
34 A
STF40N60M2
STFI40N60M2
3
1
2
1
TO-220FP
2
STFW40N60M2
3
I2PAKFP (TO-281)
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
TO-3PF
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
'
*
6
AM01476v1
Table 1. Device summary
Order code
Marking
Packages
STF40N60M2
STFI40N60M2
TO-220FP
40N60M2
I2PAKFP
STFW40N60M2
September 2016
This is information on a product in full production.
Packing
(TO-281)
Tube
TO-3PF
DocID026364 Rev 2
1/18
www.st.com
Contents
STF40N60M2, STFI40N60M2, STFW40N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
2/18
.............................................. 9
4.1
TO-220FP, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
I2PAKFP (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-3PF, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
VGS
Gate-source voltage
ID(1)
ID
(1)
dv/dt
(3)
dv/dt(4)
V
Drain current (continuous) at TC = 25 °C
34
A
Drain current (continuous) at TC = 100 °C
22
A
136
A
Total dissipation at TC = 25 °C
40
63
W
Peak diode recovery voltage slope
15
V/ns
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC=25 °C)
Tstg
Storage temperature range
Tj
TO-3PF
± 25
IDM (1),(2) Drain current (pulsed)
PTOT
Unit
TO-220FP,
I2PAKFP
2500
3500
V
°C
- 55 to 150
Operating junction temperature range
°C
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area.
3. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
4. VDS ≤ 480 V
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220FP,
I2PAKFP
TO-3PF
Rthj-case Thermal resistance junction-case
3.13
2.00
°C/W
Rthj-amb
62.5
50
°C/W
Thermal resistance junction-ambient
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
6
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50 V)
500
mJ
DocID026364 Rev 2
3/18
18
Electrical characteristics
2
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current ()
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
Unit
600
V
VGS = 0, VDS = 600 V
1
µA
VGS = 0, VDS = 600 V,
TC=125 °C(1)
100
µA
VDS = 0, VGS = ± 25 V
±10
µA
3
4
V
0.078
0.088
Ω
Min.
Typ.
Max.
Unit
-
2500
-
pF
-
117
-
pF
-
2.4
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 17 A
1. Defined by design, not subject to production test
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
342
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0
-
4.4
-
Ω
Qg
Total gate charge
-
57
-
nC
Qgs
Gate-source charge
-
10
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 34 A,
VGS = 10 V
(see Figure 17: Gate charge
test circuit)
-
25.5
-
nC
VGS = 0, VDS = 100 V,
f = 1 MHz
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical characteristics
Table 7. Switching times
Symbol
td(on)
tr
Parameter
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 300 V, ID = 34 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16: Switching
times test circuit for
resistive load and
Figure 21: Switching time
waveform)
-
20.5
-
ns
-
13.5
-
ns
-
96
-
ns
-
11
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
34
A
ISDM
(1)
Source-drain current (pulsed)
-
136
A
VSD
(2)
Forward on voltage
ISD = 34 A, VGS = 0
-
trr
Reverse recovery time
-
440
ns
Qrr
Reverse recovery charge
-
8.2
µC
IRRM
Reverse recovery current
ISD = 34 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 18:
Test circuit for inductive load
switching and diode
recovery times)
-
37
A
-
568
ns
-
11.5
µC
-
40.5
A
ISD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 34 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 18: Test circuit
for inductive load switching
and diode recovery times)
1.6
V
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026364 Rev 2
5/18
18
Electrical characteristics
2.1
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP and Figure 3. Thermal impedance for TO-220FP and
I2PAKFP
I2PAKFP
AM16097v1
ID
(A)
100
s
ai
are (on)
s
i
DS
th
in ax R
ion m
at by
r
e
d
Op ite
Lim
10
10µs
100µs
1ms
1
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
VDS(V)
100
Figure 4. Safe operating area for TO-3PF
*,3*6$
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.
*,3*6$
G LV
D
H
DU
V
Q
LV 6 R
WK 5'
LQ D[
Q
LR \P
DW
HU GE
2S LWH
/LP
V
PV
PV
D
6LQJOHSXOVH
7M &
7F &
6LQJOHSXOVH
9'6 9
Figure 6. Output characteristics
ID (A)
90
VGS=7, 8, 9, 10V
WS V
AM16101v1
ID
(A)
VDS=18V
80
80
70
70
6V
60
60
50
50
40
40
30
30
5V
20
20
10
10
0
Figure 7. Transfer characteristics
AM16100v1
6/18
Figure 5. Thermal impedance for TO-3PF
4V
0
5
10
15
20
VDS(V)
DocID026364 Rev 2
0
0
2
4
6
8
10
VGS(V)
STF40N60M2, STFI40N60M2, STFW40N60M2
Figure 8. Gate charge vs gate-source voltage
AM16102v1
VDS
VGS
(V)
12
(V)
VDD=480V
ID=34A
VDS
500
10
400
8
Electrical characteristics
Figure 9. Static drain-source on-resistance
AM16103v1
RDS(on)
(Ω)
VGS=10V
0.082
0.081
0.080
300
0.079
6
200
0.078
4
0.077
2
100
0
0
Qg(nC)
0.076
0
10
20
30
40
50
60
Figure 10. Capacitance variations
0
4
8
12 16
20 24
28
ID(A)
Figure 11. Output capacitance stored energy
AM16104v1
C
(pF)
0.075
AM16105v1
Eoss
(µJ)
10000
15
Ciss
1000
10
100
Coss
5
10
Crss
1
0.1
1
10
100
Figure 12. Normalized gate threshold voltage vs
temperature
AM15718v1
VGS(th)
0
0
VDS(V)
(norm)
400
100 200 300
500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM15719v1
RDS(on)
(norm)
ID=17 A
1.1
ID=250µA
2.1
1.0
1.7
0.9
1.3
0.8
0.9
0.7
0.6
-50
0
50
100
TJ(°C)
DocID026364 Rev 2
0.5
-50
0
50
100
TJ(°C)
7/18
18
Electrical characteristics
STF40N60M2, STFI40N60M2, STFW40N60M2
Figure 14. Normalized V(BR)DSS vs temperature
AM15714v1
V(BR)DSS
(norm)
ID=1 mA
Figure 15. Source-drain diode forward vs
temperature
GIPD240920132025FSR
VSD
(V)
1.1
TJ= -50°C
1
1.06
0.9
TJ= 25°C
1.02
0.8
0.98
0.7
TJ= 150°C
0.94
0.6
0.9
-50
8/18
0
50
100
TJ(°C)
0.5
0
DocID026364 Rev 2
6
12
18
24
30
ISD(A)
STF40N60M2, STFI40N60M2, STFW40N60M2
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
2200
μF
VD
VGS
RG
100Ω
Vi=20V=VGMAX
VDD
D.U.T.
VG
2.7kΩ
D.U.T.
47kΩ
PW
1kΩ
PW
AM01469v1
AM01468v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
L
A
A
A
VD
D
G
D.U.T.
FAST
DIODE
B
B
2200
μF
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
3.3
μF
VDD
ID
VDD
G
Vi
RG
D.U.T.
S
Pw
AM01471v1
AM01470v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
ton
9 %5 '66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
0
DocID026364 Rev 2
10%
AM01473v1
9/18
18
Package information
4
STF40N60M2, STFI40N60M2, STFW40N60M2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
4.1
Package information
TO-220FP, package information
Figure 22. TO-220FP package outline
7012510_Rev_K_B
DocID026364 Rev 2
11/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/18
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
4.2
Package information
I2PAKFP (TO-281) package information
Figure 23. I2PAK(TO-281) package outline
5HY&
DocID026364 Rev 2
13/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
Table 10. I2PAKFP (TO-281) package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
-
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
14/18
1.20
G
4.95
5.20
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.50
7.60
DocID026364 Rev 2
7.70
STF40N60M2, STFI40N60M2, STFW40N60M2
4.3
Package information
TO-3PF, package information
Figure 24. TO-3PF package outline
B'
DocID026364 Rev 2
15/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
Table 11. TO-3PF package mechanical data
mm
Dim.
Min.
Typ.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
16/18
Max.
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10
DocID026364 Rev 2
10.20
STF40N60M2, STFI40N60M2, STFW40N60M2
5
Revision history
Revision history
Table 12. Document revision history
Date
Revision
15-May-2014
1
First release. Part numbers STF40N60M2 and STFI40N60M2
previously included in datasheet DocID024932.
2
Updated title in cover page.
Updated Table 2: Absolute maximum ratings, Table 5: On /off
states,Table 6: Dynamic and Table 8: Source drain diode.
Minor text changes.
28-Sep-2016
Changes
DocID026364 Rev 2
17/18
18
STF40N60M2, STFI40N60M2, STFW40N60M2
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