STMicroelectronics RHF200 Datasheet
Iklan
Iklan
RHF200
Rad-hard, fully differential amplifier
Datasheet - production data
Features
•
High input impedance
•
420 MHz bandwidth
•
Single-ended input compatible
• Differential slew rate: 550 V/μs
•
4 gains selectable by 2 digital inputs
•
Gain setting (V/V): 1, 1.33, 2, 4
•
Output common-mode control
•
Optimized output stage for short and long line driving
•
4.5 V to 5.5 V operating power supply range
•
Settling time at 0
.1 %, 200 Ω and 4 Vpp: 13 ns
•
300 krad MIL-STD-883 1019.9
•
SEL immune
•
SET characterized
Applications
•
Space imaging and space data acquisition systems
•
Aerospace instrumentation
•
Harsh radiation environments
•
ADC drivers
Description
The RHF200 is a very high-speed (420 MHz), pure, differential amplifier that operates with a power supply from 4.5 V to 5.5 V. Four gains can be set by two digital inputs.
It can be used as a differential-to-differential or single-differential amplifier, and it is able to drive either an ADC input or a 100 Ω differential line.
With its non-inverting architecture, the RHF200 features a high input impedance that is particularly intended to drive video signals from
CCD sensors to an ADC.
The RHF200 is mounted in a hermetic ceramic
Flat-16 package.
Parameter
Table 1: Device summary
RHF200K1 RHF200K01V
5962F17210
Quality level
—
Engineering model
QML-V Flight
Package
Mass
Temperature range
Flat-16
0.65 g
-55 °C to 125 °C
Flat-16
0.65 g
-55 °C to 125 °C
Notes:
(1)
SMD = standard microcircuit drawing
July 2017 DocID029604 Rev 3
This is information on a product in full production.
1/35 www.st.com
Contents
Contents
RHF200
1 Functional description .................................................................... 3
2 Pin description ................................................................................ 4
3 Absolute maximum ratings and operating conditions ................. 6
4 Electrical characteristics ................................................................ 7
Electrical characteristics curves ...................................................... 15
Total ionizing dose (TID) ................................................................. 22
Heavy ions ...................................................................................... 22
6 Application note ............................................................................ 23
Output biasing ................................................................................. 24
Current consumption ....................................................................... 24
Usable input signal range in AC ...................................................... 24
Decoupling of RHF200 .................................................................... 25
Single-to-differential use ................................................................. 26
RHF200 driving RHF1201 or RHF1401 ADC .................................. 27
RHF200 driving a long track with impedance matching .................. 28
RHF200 in dual power supply mode ............................................... 29
7 Package information ..................................................................... 30
Ceramic Flat-16 package information ............................................. 30
8 Ordering information ..................................................................... 32
9 Other information .......................................................................... 33
Documentation ................................................................................ 33
10 Revision history ............................................................................ 34
2/35 DocID029604 Rev 3
RHF200
1 Functional description
Figure 1: Block diagram
Functional description
Figure 2: Typical application schematic
DocID029604 Rev 3 3/35
Pin description
2 Pin description
Figure 3: Pin locations
RHF200
4/35
8
9
10
11
12
13
14
1
2
3
4
5
6
7
15
16
1. Pins named Vcc must be externally connected together
2. Pins named Gnd must be externally connected together
Pin # Name
Table 2: Pin description
Description
G1
Vcc
Gnd
NC
Vo2
Vocm
Vo1
Vcc
Gnd
G0
Vcc
Gnd
E1+
E2+
Gnd
Vcc
Gain select
Positive power supply
Ground (reference level 0 V)
Positive input of amplifier 1
Positive input of amplifier 2
Ground (reference level 0 V)
Positive power supply
Gain select
Positive power supply
Ground (reference level 0 V)
Not connected
Output 2 (in phase with E1+)
Common-mode output voltage input pin
Output 1 (in phase with E2+)
Positive power supply
Ground (reference level 0 V) - connected to upper metallic lid
DocID029604 Rev 3
RHF200
G1
0
0
1
1
Table 3: Truth table of RHF200
G0 Gain (V/V)
0
1
0
1
1
1.33
2
4
Pin description
DocID029604 Rev 3 5/35
Absolute maximum ratings and operating conditions
RHF200
3 Absolute maximum ratings and operating conditions
Symbol
V
CC
V in
V
Gx
T oper
T stg
T j
R thja
R thjc
ESD
IESD
Storage temperature
Maximum junction temperature (4)
thermal resistance junction to ambient thermal resistance junction to case
ESD diode continuous current
Latch-up immunity
-65 to 150
150
50
22
8
0.5
10
200
°C
°C/W kV mA
Notes:
(1)
All voltage values are measured with respect to the ground pin.
(2)
The magnitude of input and output voltages must never exceed Gnd - 0.3 V and V
CC
+ 0.3 V.
(3)
The magnitude of input and output voltages must never exceed Gnd - 0.3 V and V
CC
+ 0.3 V.
(4)
Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all amplifiers.
(5)
Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
(6)
Charged device model: all pins and package are charged together to the specified voltage and then discharged directly to the ground through only one pin.
Symbol
Parameter
Table 4: Absolute maximum ratings
Value
Input voltage range on digital pin (3)
Operating free air temperature range
7
Gnd to Vcc
Gnd - 0.3 V to Vcc + 0.3 V
-55 to 125
Table 5: Operating conditions
Parameter Value
Unit
V
Unit
V
CC
V bias
V ocm
V
InAC
R
L
C
L
Supply voltage
Input DC biasing range
Output common-mode range
Minimum load impedance
Maximum load capacitance directly connected on outputs
4.5 to 5.5
1.6 to V
CC
- 1.5
0.8 to V
CC
- 1.8
1.3 to V
CC
- 1.3
190
3
V
Ω pF
Notes:
(1)
At any time, one of the inputs (E1+ or E2+) must be in the V bias
range.
6/35 DocID029604 Rev 3
RHF200 Electrical characteristics
4 Electrical characteristics
Symbol
DC performance
Table 6: Electrical characteristics beginning of life, Vcc = 4.5 V to 5.5 V, Gnd = 0 V (unless otherwise specified)
Parameter Test conditions Temp. Min. Typ. Max. Unit
V o
ΔV o
Output offset voltage
Output offset voltage drift
V ocm
= 0.8 V to Vcc -
1.8 V,
V bias
= 1.6 V to Vcc -
1.5 V
V ocm
= 0.8 V to Vcc -
1.8 V,
V bias
= 1.6 V to Vcc -
1.5 V
-55 °C
25 °C
125 °C
-55 °C to 125
°C
-10
-10
-10
±10
10
10
10 mV
µV/°C
I
CC
I b
I ocm
C in
V bias
V ocm
CMFBg
Quiescent current
Input bias current
Input current on output common-mode range
Input capacitance
Input DC biasing range
Output common-mode range
V
Usable input signal range
Common-mode feedback gain
No load, V bias
= V ocm
=
V ocm
= Vcc/2,
V bias
= 1.6 V to Vcc -
1.5 V
V ocm
= 0.8 V to Vcc -
1.8 V
V ocm
= 0.8 V to Vcc -
1.8 V
V bias
= 1.6 V to Vcc -
1.5 V
V bias
= 1.6 V to Vcc -
1.5 V
V ocm
= 0.8 V to Vcc -
1.8 V,
V bias
= 1.6 V to Vcc -
1.5 V
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C to 125
°C
25 °C
-25
-55 °C to 125
°C
-55 °C to 125
°C
1.6
0.8
-55 °C to 125
°C
1.3
-55 °C 0.985
25 °C 0.985
125 °C 0.985
20.5
21
21.5
0.02
0.04
0.15
-10
2
1
1
1
26
27
28
1
1
1
Vcc -
1.5 V
Vcc -
1.8 V
Vcc -
1.3 V
1.015
1.015
1.015 mA
µA pF
V
V/V
V
OH
High output voltage
R
L
= 200 Ω
R
L
= 1 kΩ
-55 °C
25 °C
125 °C
-55 °C
25 °C
Vcc -
0.45
Vcc -
0.58
Vcc -
0.72
Vcc -
0.2
Vcc -
0.26
Vcc -
0.39
Vcc -
0.49
Vcc -
0.6
Vcc -
0.17
Vcc -
0.22
V
DocID029604 Rev 3 7/35
Electrical characteristics
Symbol
V
OL
Parameter
Low output voltage
Test conditions
R
L
= 200 Ω
R
L
= 1 kΩ
I out
Output short circuit (even if the amplifier has an output current limiter, this test is performed during a short period of time)
Dynamic performance
Bw
SR
Output to GND,
V ocm
= Vcc/2
Small signal -3 dB bandwidth
Differential slew rate
V ocm
= V bias
= Vcc/2, gain = 1,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 1.33,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 2,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 4,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 1,
V outdm
= 2 V pp
,
20 % to 80 %,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 1.33,
V outdm
= 2 V pp
,
20 % to 80 %, R
L
=
200 Ω
V ocm
= V bias
= Vcc/2, gain = 2, V outdm
= 4
V pp
,
20 % to 80 %,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2,
8/35 DocID029604 Rev 3
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
Temp. Min.
125 °C
Vcc -
0.33
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
460
440
400
450
360
330
280
270
250
210
Typ.
Vcc -
0.28
120
160
300
110
160
200
100
100
100
450
460
420
350
340
310
270
225
220
215
60
50
45
520
500
540
520
470
580
550
500
570
RHF200
Max. Unit
145
195
360
132
195
240 mV mA
MHz
V/μs
RHF200
Symbol
St tdio
Parameter
Settling time 0.1 %
Propagation delay input to output
Test conditions gain = 4,
V outdm
= 4 V pp
,
20 % to 80 %,
R
L
= 200 Ω
V outdm
= 4 Vpp-step,
R
L
= 200 Ω,
All gains
CMRR
Common-mode rejection ratio,
20 log (ΔV bias
/ΔV outdm
)
V bias
= Vcc/2 +/-0.5 V, all gains,
F = 1 MHz
CMRRo
Cu
PSRR
Vocm CMRR,
20 log (ΔV ocm
/ΔV outdm
)
Channel unbalanced,
20 log
(ΔV outdm
/ΔV outcm
)
Power supply rejection ratio,
20 log (ΔV
CC
/ΔV outdm
)
ΔV ocm
= 0.8 V to Vcc -
1.8 V, all gains
ΔV outdm
= 1 Vpp,
F = 1 MHz,
RL ≥ 200 Ω
Vcc = 5 V ± 100 mV,
F = 1 MHz, all gains
Noise and distortion
Temp. Min.
25 °C 420
Electrical characteristics
Typ.
530
Max. Unit
125 °C 380 480
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
- 55 °C to 125
°C
45
45
45
40
40
40
50
55
50
50
50
1
1.3
55
55
12
13
16
0.9
70 ns dB
-55 °C to 125
°C
70 e n
Differential output noise
F = 100 kHz, gain = 1
F = 100 kHz, gain = 1.33
F = 100 kHz, gain = 2
F = 100 kHz, gain = 4
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
14.5
13
15
18.5
22.5
28
33.5
8.8
10
12.5
10
12 nV/√
Hz
H2/H3,
SFDR
Distortion
V outdm
= 4 V pp
,
V bias
= V ocm
= Vcc/2, gain = 2,
R
L
= 200 Ω,
F = 1 MHz
25 °C 80 dBc
DocID029604 Rev 3 9/35
Electrical characteristics
Symbol Parameter
Gain select
Thr max.
Max. threshold on pin G0,
G1 for low level
Thr min.
Min. threshold on pin G0,
G1 for high level
IGL Input current on gain pin
IGH Input current on gain pin
Gain
Gain setting, no load,
Fin = 1 MHz,
V bias
= V ocm
= Vcc/2,
V outdm
= 100 mVpp
Gx = Vcc
G1,
G0 = 0,
0
G1,
G0 = 0,
1
G1,
G0 = 1,
0
G1,
G0 = 1,
1
G1,
G0 = 0,
0
Test conditions
V outdm
= 4 V pp
,
V bias
= V ocm
= Vcc/2, gain = 2,
R
L
= 200 Ω,
F = 10 MHz
V outdm
= 4 V pp
,
V bias
= V ocm
= Vcc/2, gain = 2,
R
L
= 1 kΩ,
F = 1 MHz
V outdm
= 4 V pp
,
V bias
= V ocm
= Vcc/2, gain = 2,
R
L
= 1 kΩ,
F = 10 MHz
Temp. Min. Typ.
RHF200
Max. Unit
54
80
68
Versus GND
Gx = 0 V
-55 °C
25 °C
125 °C
-55 °C
25 °C
125 °C
-55 °C to 125
°C
-55 °C to 125
°C
-25
1.4
1.4
1.4
0.99
-10
10
1 1.01
0.4
0.4
0.4
25
V
µA
1.31 1.33 1.35
25 °C 1.98
3.96
2
4
-0.87 0
2.02
4.04
V/V
0.86 dB
10/35 DocID029604 Rev 3
RHF200
Symbol
Gain drift
Parameter
Average gain drift, no load,
Fin = 1 MHz, V
Vcc/2, V outdm bias
= V ocm
=
= 100 mVpp
Standard deviation gain drift, no load, Fin = 1 MHz, V bias
=
V ocm
= Vcc/2, V outdm
= 100 mVpp
Test conditions
G1,
G0 = 0,
1
G1,
G0 = 1,
0
G1,
G0 = 1,
1
Av = 1
Av = 1.33
Av = 2
Av = 4
Av = 1
Av = 1.33
Av = 2
Av = 4 tdgo
Propagation delay gain control to output
All gains
Temp. Min.
-55 °C to 125
°C
2.38
5.94
11.95
Electrical characteristics
Typ. Max. Unit
-55 °C to 125
°C
Notes:
(1)
When V bias
≠ V ocm
, an extra current consumption is added which depends on V bias and V ocm
values.
(2)
In AC mode, one of the two inputs, E1+ and E2+, must always be in V bias
range.
(3)
V
OUT dm is the output differential amplitude
2.48
6
12
5.9
7.2
8.8
20
3.5
4.7
7.5
22
8
2.56
6.1
12.12
(µV/V
)/°C ns
DocID029604 Rev 3 11/35
Electrical characteristics RHF200
Table 7: Electrical characteristics after 300 krad high-dose rate (HDR), Vcc = 4.5 V to 5.5 V,
Gnd = 0 V (unless otherwise specified)
Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit
DC performance
V o
I
CC
I b
Output offset voltage
Quiescent current
Input bias current
V ocm
= 0.8 V to Vcc - 1.8 V,
V bias
= 1.6 V to Vcc -1.5 V
No load,
V bias
= V ocm
V ocm
= Vcc/2,
V bias
= 1.6 V to Vcc - 1.5 V
25 °C
25 °C
25 °C
-10
21
0.04
30
27
1 mV mA
µA
I ocm
C in
Input current on output common-mode range
Input capacitance
V ocm
= 0.8 V to Vcc - 1.8 V 25 °C
25 °C
-25 -10
2 pF
V bias
V ocm
Input DC biasing range
Output common-mode range
V
Usable input signal range
V ocm
= 0.8 V to Vcc - 1.8 V
V bias
= 1.6 V to Vcc - 1.5 V
V bias
= 1.6 V to Vcc - 1.5 V
25 °C
25 °C
25 °C
1.6
0.8
1.3
Vcc -
1.5 V
Vcc -
1.8 V
Vcc -
1.3 V
V
Common-mode feedback gain
CMFBg
V ocm
= 0.8 V to Vcc - 1.8 V,
V bias
= 1.6 V to Vcc - 1.5 V
25 °C 0.985 1 1.015 V/V
R
L
= 200 Ω
V
OH
High output voltage
V
OL
Low output voltage
R
L
= 1 kΩ
R
L
= 200 Ω
R
L
= 1 kΩ
I out
Output short circuit (even if the amplifier has an output current limiter, this test is performed during a short period of time)
Dynamic performance
Output to GND,
V ocm
= Vcc/2
Bw
Small signal -3 dB bandwidth
V ocm
= V bias
= Vcc/2, gain = 1,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 1.33,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
25 °C
25 °C
25 °C
25 °C
Vcc -
0.58
Vcc -
0.26
Vcc -
0.49
Vcc -
0.22
160
160
195
195
V mV
330
250
100
420
310 mA
MHz
12/35 DocID029604 Rev 3
RHF200
Symbol
SR
CMRR
CMRRo
Cu
Parameter
Differential slew rate
Common-mode rejection ratio, 20 log
(ΔV bias
/ΔV outdm
)
Vocm CMRR, 20 log
(ΔV ocm
/ΔV outdm
)
Channel unbalanced, 20 log (ΔV outdm
/ΔV outcm
)
Test conditions
V ocm
= V bias
= Vcc/2, gain = 2,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain =
4,
V outdm
= 100 mV pp
,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 1,
V outdm
= 2 V pp
,
20 % to 80 %,
R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 1.33,
V outdm
= 2 V pp
,
20 % to 80 %, R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 2,
V outdm
= 4 V pp
,
20 % to 80 %, R
L
= 200 Ω
V ocm
= V bias
= Vcc/2, gain = 4,
V outdm
= 4 V pp
, 20 % to 80
%,
R
L
= 200 Ω
V bias
= Vcc/2 ±0.5 V, all gains,
F = 1 MHz
ΔV ocm
= 0.8 V to Vcc - 1.8
V, all gains
ΔV outdm
= 1 Vpp,
F = 1 MHz,
RL ≥ 200 Ω
Gain select
Thr max.
Thr min.
IGL
IGH
Gain
Max. threshold on pin G0,
G1 for low level
Min. threshold on pin G0,
G1 for high level
Input current on gain pin
Input current on gain pin
Gain setting, no load, Fin =
1 MHz, V bias
= V ocm
= Vcc/2,
V outdm
= 100 mVpp
Versus GND
Gx = 0 V
Gx = Vcc
G1,
G0 = 0,
0
Temp.
25 °C
25 °C
25 °C
25 °C
25 °C
25 °C
25 °C
25 °C
25 °C
Electrical characteristics
Min. Typ. Max. Unit
440
420
45
40
50
220
50
500
520
550
530
55
50
70
V/μs dB
1.4
-25
0.99
-10
10
1
0.4
V
25
µA
1.01 V/V
DocID029604 Rev 3 13/35
Electrical characteristics
Symbol Parameter Test conditions
G1,
G0 = 0,
1
G1,
G0 = 1,
0
G1,
G0 = 1,
1
G1,
G0 = 0,
0
G1,
G0 = 0,
1
G1,
G0 = 1,
0
G1,
G0 = 1,
1
Temp. Min.
1.31
1.9
3.8
-0.87
2.38
5.57
11.6
Notes:
(1)
When V bias
≠ V ocm
, an extra current consumption is added which depends on V bias and V ocm
values.
(2)
In AC mode, one of the two inputs, E1+ and E2+, must always be in V bias
range.
RHF200
Typ. Max. Unit
1.33 1.35
2
4
0
2.02
4.04
0.86
2.48 2.56
6 6.1
12 12.12 dB
14/35 DocID029604 Rev 3
RHF200
4.1
Electrical characteristics
Electrical characteristics curves
Figure 4: Gain vs. frequency, Av = 1 Figure 5: Gain vs. frequency, Av = 1, Vocm = 0.8 V
Figure 6: Gain vs. frequency, Av = 1.33
Figure 7: Gain vs. frequency, Av = 1.33, Vocm = 0.8 V
Figure 8: Gain vs. frequency, Av = 2 Figure 9: Gain vs. frequency, Av = 2, Vocm = 0.8 V
DocID029604 Rev 3 15/35
Electrical characteristics
Figure 10: Gain vs. frequency, Av = 4
RHF200
Figure 11: Gain vs. frequency, Av = 4, Vocm = 0.8 V
Figure 12: Gain vs. temperature, Av = 1 Figure 13: Gain drift, Av = 1
Figure 14: Gain vs. temperature, Av = 1.33 Figure 15: Gain drift, Av = 1.33
16/35 DocID029604 Rev 3
RHF200
Figure 16: Gain vs. temperature, Av = 2
Electrical characteristics
Figure 17: Gain drift, Av = 2
Figure 18: Gain vs. temperature, Av = 4 Figure 19: Gain drift, Av = 4
Figure 20: CMRR vs. frequency, Av = 1 Figure 21: CMRR vs. frequency, Av = 1.33
DocID029604 Rev 3 17/35
Electrical characteristics
Figure 22: CMRR vs. frequency, Av = 2
RHF200
Figure 23: CMRR vs. frequency, Av = 4
Figure 24: CMRRout vs. frequency Figure 25: Channel unbalance vs. frequency
Figure 26: PSRR vs. frequency, Av = 1 Figure 27: PSRR vs. frequency, Av = 1.33
18/35 DocID029604 Rev 3
RHF200
Figure 28: PSRR vs. frequency, Av = 2
Electrical characteristics
Figure 29: PSRR vs. frequency, Av = 4
Figure 30: Settling time response, Av = 2, Ta = 25 °C, high side
Figure 31: Settling time response, Av = 2, Ta = 25 °C, low side
Figure 32: Settling time response, Av = 2,
Ta = 125 °C, high side
Figure 33: Settling time response, Av = 2,
Ta = 125 °C, low side
DocID029604 Rev 3 19/35
Electrical characteristics
Figure 34: Settling time response, Av = 2,
Ta = -55 °C, high side
RHF200
Figure 35: Settling time response, Av = 2,
Ta = -55 °C, low side
Figure 36
: Harmonic level vs. frequency, RL = 200 Ω,
Ta = 25 °C
Figure 37
: Harmonic level vs. frequency, RL = 1 kΩ,
Ta = 25 °C
Figure 38
: Harmonic level vs. frequency, RL = 200 Ω,
Ta = 125 °C
Figure 39
: Harmonic level vs. frequency, RL = 1 kΩ,
Ta = 125 °C
20/35 DocID029604 Rev 3
RHF200
Figure 40:
Harmonic level vs. frequency, RL = 200 Ω,
Ta = -55 °C
Electrical characteristics
Figure 41
: Harmonic level vs. frequency, RL = 1 kΩ,
Ta = -55 °C
Figure 42: Propagation delay input to output Figure 43: Propagation delay gain control to output
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Radiations
5
5.1
5.2
5.3
RHF200
Radiations
Introduction
Table 8 summarizes the radiation performance of the RHF200.
Type
Table 8: Radiations
Features
180 krad/h high-dose rate (50 rad/s) up to:
TID
Heavy ions
ELDRS free up to:
36 rad/h low-dose rate (10 rad/s) up to:
SEL immunity (at 125 °C with a particle angle of 60 °) up to:
SEL immunity (at 125 °C with a particle angle of 0 °) up to:
SET (at 25 °C)
Value
300
Unit krad (Si)
120
60
MeV.cm²/mg
Characterized
Total ionizing dose (TID)
The products guaranteed by radiation within the RHA QML-V system fully comply with the
MIL-STD-883 test method 1019 specification.
The RHF200 is RHA QML-V tested and characterized in full compliance with the MIL-STD-
883 specification both according to condition A (between 50 and 30 rad/s) and condition D
(below 10 mrad/s).
•
All tests are performed in accordance with MIL-PRF-38535 and the test method 1019 of the MIL-STD-883 for total ionizing dose (TID).
•
The ELDRS characterization is performed in qualification only on both biased and unbiased parts, on a sample of 30 units from two different wafer lots.
•
Each wafer lot is tested at high-dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification.
Heavy ions
The behavior of the product when submitted to heavy ions is not tested in production. Heavy ion trials are performed on qualification lots only.
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RHF200
6
6.1
6.2
Application note
Application note
Description
The RHF200 is a fully differential amplifier featuring high impedance input. Input and output common-mode voltage can be set up independently in this device, giving a flexible design implementation. Thanks to the very low input DC bias current (less than 1 µA over the full temperature and input voltage biasing range), a high impedance resistor can be used to bias the input with a slight DC shift. This high impedance resistor allows the RHF200 to be used with low output current compliance sensors without adding an isolation buffer.
The RHF200 can work in full differential mode (differential input and differential output) or in single-to-differential mode (single-ended input and differential output). In single-todifferential mode, either the E1+ or the E2+ input can be used.
Input biasing
Input voltage biasing of the RHF200 can be achieved in several ways.
•
In DC input coupling, the biasing must be provided by the source driver. Thanks to the low input biasing current, the output impedance (Rs) can be a few kilo ohms without
degrading the output offset voltage (see Figure 44: "DC input coupling" ).
•
In AC input coupling, the biasing must be provided by an external source. The usual way to do this, although there are many ways, is to use two resistors (Rpol) as shown
in Figure 45: "AC input coupling" . Thanks to a low input biasing current, these
resistors can be as high as several kilo ohms.
Note that due to input current compensation techniques used in the RHF200, the polarity of the biasing current can be positive or negative over the full temperature and Vbias range.
Figure 44: DC input coupling
Figure 45: AC input coupling
DocID029604 Rev 3 23/35
Application note
6.3 Output biasing
RHF200
The output voltage biasing of the RHF200 is achieved by applying the correct voltage on the Vocm pin. The voltage applied to Vocm sets the Vo1 and Vo2 bias voltage through the following equations: ((Vo1 + Vo2)/2)/CMFBg and Vo2 = Vo1 ± Vo. CMFBg is the commonmode feedback gain equal to 1 and Vo is the differential output offset voltage. The Vocm pin has a typical input bias current (Iocm) of -10 µA. The negative value means that this current flows from the RHF200. If a resistor bridge is used to create a Vocm voltage bias, this resistor bridge should have a low equivalent output resistance to minimize errors created by Iocm.
Please note that there is no internal biasing of the Vocm pin. If the Vocm pin is left floating, Vo1 and Vo2 will have an undetermined value.
Example: Vcc = 5 V and Vocm requested = 2.5 V. So, the resistor bridge has two equal resistors, R, and its internal resistance is R/2. With Iocm = -10 µA and a target error for
Vocm vs. 2.5 V of approximately 20 mV maximum we have: R/2 ≤ 20 mV/10 µA = 2 kΩ.
With a normalized value, R = 3.9 kΩ.
6.4 Current consumption
Table 6 gives the current consumption (Icc) of the RHF200 when Vbias and Vocm have
equal voltage. If Vbias and Vocm are different, the current consumption rises with the following relationship: Total Icc ≈ Icc + |Vbias - Vocm| / R where R = 500 Ω ± 10 %. This current increase is due to the internal architecture of the RHF200. It is not gain dependent.
For example, when Vbias = 2.5 V and Vocm = 0.8 V, total Icc at 25 °C = 21 mA + 3.4 mA =
24.4 mA whatever the gain set.
Another source of additional current consumption is the output offset voltage (Vo). In conjunction with the load, the output offset voltage creates an added current equal to
Vo/Rload. For example, if Vo = 5 mV and Rload = 200 Ω, the current added to Icc is 25 µA.
6.5 Usable input signal range in AC
The allowed DC biasing input voltage (Vbias) is in the range 1.6 V to Vcc - 1.5 V. Thanks to the input structure of the RHF200, the input AC signal can go beyond the Vbias range to:
1.3 V to Vcc - 1.3 V. However, this feature is only possible if one of the two inputs (E1+ or
E2+) is always in the Vbias range at a given time. If this condition is not met, the usable AC input signal range must fit with the Vbias range. The following figures indicate correct and incorrect use of the input signal range.
Figure 46: Correct use of the input signal range
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RHF200
Figure 47: Second correct use of the input signal range
Application note
Figure 48: Incorrect use of the input signal range
6.6 Decoupling of RHF200
The RHF200 has four pairs of power supply pins (Vcc and Gnd). These pins must be connected together externally. The layout of each pair of pins is such that the placement of the capacitors can be as close as possible to the RHF200 package. Four 100 nF ceramic capacitors must be placed as close as possible to the RHF200 package and an additional
10 µF can also be placed close to the device. Figure 49 shows a layout example of the
RHF200 decoupling capacitors.
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Application note RHF200
Figure 49: Layout example of the RHF200 decoupling capacitors (top and bottom layer respectively)
6.7 Single-to-differential use
The RHF200 is designed as a fully differential input/output amplifier. Thanks to its high input impedance, the device is able to convert a differential signal from a sensor which has no ability to drive a matched line, to a fully differential signal that is able to drive a matched line transmission down to 200 Ω.
However, the RHF200 can also be used as a converter from a single-ended input to a fully differential output. Thanks to a very good output balance error (70 dB typ), the symmetry of the RHF200 outputs (Vo1 and Vo2) are excellent.
Because the device also has a high CMRR value with a very good flatness-over-frequency
(up to 10 MHz) and temperature, it can efficiently reject ground noise. The figures below show two possible single-to-differential implementations. E1+ and E2+ can be exchanged without any performance issues. However, the second configuration should not be used as it does not allow ground noise to be rejected.
Figure 50: Correct single-to-differential implementation
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RHF200
Figure 51: Incorrect single-to-differential implementation
Application note
6.8 RHF200 driving RHF1201 or RHF1401 ADC
The RHF200 has been designed to complement work with STMicroelectronic's rad-hard
ADC: RHF1201 and RHF1401. Thanks to its 0.8 V output common-mode possibility, the
RHF200 can drive RHF1x01 inputs without input coupling capacitors. Figure 52 shows a
possible design.
Figure 52: RHF200 in association with RHF1x01 in DC coupling
The DC output common-mode voltage of the RHF200 is set at 0.8 V through the Vocm pin.
In DC, Vin = Vo1 and VinB = Vo2 so, Vin and VinB are also set at 0.8 V. The Incm pin can be left floating if the internal reference is used or externally set by the appropriate reference voltage (refer to the RHF1x01 datasheet). Note that Incm has no need to be at the same
DC voltage as Vin and VinB. This is specific to the RHF1x01 (refer to the RHF1x01 datasheets for more information).
In addition, please note that Vrefp + Vrefm of the RHF1x01 must be higher than 1.2 V because the common-mode of the input is (Vin + VinB)/2 = 0.8 V. This condition is important and must respect these relationships (please refer to the RHF1x01 datasheet):
•
CMinput = (Vin + VinB)/2
•
CMref = (Vrefp + Vrefm)/2
• CMinput ≤ CMref + 0.2 V
•
Full scale range = 2 x (Vrefp – Vrefm)
•
So, CMinput = 0.8 V and fixed by the low limit of the RHF200 Vocm
DocID029604 Rev 3 27/35
Application note
• CMref ≥ 0.8 V - 0.2 V = 0.6 V gives Vrefp + Vrefm ≥ 1.2 V
• As Vrefm = Gnd = 0 V, Vrefp ≥ 1.2 V and full scale range = 2.4 Vpp
RHF200
In the current configuration, we can drive the RHF1x01 inputs with a fully differential signal of 2.4 Vpp (Vin = VinB = 0.8 V ± 0.6 V -> 0.2 V to 1.4 V in line with Vin and VinB input range). The three 10 pF capacitors are there to limit the effect of the RHF1x01 sampling capacitor. The two resistors Riso (≥ 50 Ω) are used to “protect” the RHF200 from excessive capacitive load.
If the relationship CMinput ≤ CMref + 0.2 V cannot be achieved, the DC coupling of
RHF200 with RHF1x01 has to be converted in AC coupling. Figure 53 shows a possible
design.
Figure 53: RHF200 in association with RHF1x01 in AC coupling
6.9
Thanks to the AC coupling, the DC output common-mode voltage of the RHF200 can be set at any value between 0.8 V to Vcc-1.8 V. Thanks also to the AC coupling, the DC biasing of Vin and VinB can be set to a different value of the RHF200 Vocm setting, but it must respect all conditions described in the RHF1x01 datasheet in the section: Driving the analog input: how to correctly bias the RHF1x01.
RHF200 driving a long track with impedance matching
Thanks to its ability to drive a 200 Ω load with low distortion and good settling time (13 ns at 0.1 %), the RHF200 can drive a long track with impedance matching if necessary.
Figure 54: RHF200 driving a long track with impedance matching
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RHF200
6.10 RHF200 in dual power supply mode
Application note
The RHF200 has been designed to be used with a single power supply voltage (5 V ± 10
%). However, it is also possible to use it with a dual power supply voltage (2.5 V ± 10 %) without any differences in performance.
In such a case, the Gnd pins become the negative power supply (-Vcc) and the positive power supply keeps the same function. In addition, the digital inputs (G0 and G1), Vocm input, and E1+ and E2+ become referenced at –Vcc. Overall, we have the following setup:
•
Vbias range: from –Vcc + 1.6 V to Vcc – 1.5 V
•
VinAC range: from –Vcc + 1.3 V to Vcc – 1.3 V
•
Vocm range: from –Vcc + 0.8 V to Vcc – 1.8 V
•
Max. threshold on G0 and G1 for low level: -Vcc + 0.4 V
•
Min. threshold on G0 and G1) for high level: -Vcc + 14 V
Decoupling of the RHF200 is a little bit different in dual power supply mode than in single power supply mode. Instead of 4 x 100 nF located as close as possible, we need 8 x 47 nF as close as possible. We need 4 x 47 nF for each +Vcc and each –Vcc (previously Gnd). In
addition, the 10 µF tank capacitor is now 2 x 4.7 µF. Figure 55 shows a possible design in
dual power supply mode.
Figure 55: Possible design of RHF200 in dual power supply mode
DocID029604 Rev 3 29/35
Package information
7
7.1
Package information
RHF200
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Ceramic Flat-16 package information
Figure 56: Ceramic Flat-16 package outline
1. The upper metallic lid is electrically connected to pin16.
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RHF200
Ref.
E2
E3 e
L
A b c
D
E
Q
S1
0.76
6.35
0.66
0.13
Min.
2.31
0.38
0.10
9.75
6.75
Package information
Table 9: Ceramic Flat-16 mechanical data
Dimensions
Millimeters Inches
Typ. Typ.
4.32
1.27
Max.
2.72
0.48
0.18
10.13
7.06
7.36
1.14
Min.
0.091
0.015
0.004
0.384
0.266
0.030
0.250
0.026
0.005
0.170
0.050
Max.
0.107
0.019
0.007
0.399
0.278
0.290
0.045
DocID029604 Rev 3 31/35
Ordering information RHF200
8 Ordering information
Order code Description
Table 10: Order codes
Temp. range Package
RHF200K1
Engineering model
QML-V Flight
-55 °C to 125 °C Flat-16
RHF200K01V
Marking Packing
RHF200K1
5962F1721001VXC
Conductive strip pack
Contact your ST sales office for information regarding the specific conditions for products in die form and QML-Q versions.
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RHF200
9
9.1
9.2
Other information
Other information
Date code
The date code is structured as shown below:
•
Engineering model: EM xyywwz
•
QML flight model: FM yywwz
Where: x (EM only): 3, assembly location Rennes (France) yy: last two digits year ww: week digits z: lot index in the week
Documentation
Quality level
Table 11: Documentation provided for QMLV flight
Documentation
Engineering model
QML-V flight
—
•
Certificate of conformance with Group C (reliability test) and group D (package qualification) reference
•
Precap report
•
PIND (1) test summary (test method conformance
certificate)
•
•
X-ray report
•
Screening summary
•
Failed component list (list of components that have
• failed during screening)
Group A summary (QCI (3) electrical test)
•
Group B summary (QCI mechanical test)
•
Group E (QCI wafer lot radiation test)
Notes:
(1)
PIND = particle impact noise detection
(2)
SEM = scanning electron microscope
(3)
QCI = quality conformance inspection
DocID029604 Rev 3 33/35
Revision history
10 Revision history
Date
09-Jan-2017
06-Apr-2017
18-Jul-2017
Revision
1
2
3
Table 12: Document revision history
Changes
RHF200
Initial release
Datasheet status changed to "production data"
Replaced Figure 2: "Typical application schematic"
Section 6: "Application note" : replaced content to finalize datasheet for
the flight model.
Added Flight model and SMD number.
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RHF200
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
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