®
ESM4045DV
NPN DARLINGTON POWER MODULE
■
■
■
■
■
■
■
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
INSULATED PACKAGE (UL COMPLIANT)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
■
MOTOR CONTROL
■
■
■
SMPS & UPS
DC/DC & DC/AC CONVERTERS
WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
= 0)
Value
600
450
Unit
Obsolete Product(s) - Obsolete Product(s)
V
V V
CEO(sus)
Collector-Emitter Voltage (I
B
V
EBO
I
I
C
Emitter-Base Voltage (I
C
= 0)
Collector Current
= 10 ms)
7
42
63
V
A
A
CM
Collector Peak Current (t p
Base Current 4 A I
B
I
BM
Base Peak Current (t p
= 10 ms)
Total Dissipation at T c
= 25 o
C
8 A
P tot
T stg
T j
Storage Temperature
Max. Operating Junction Temperature
150
-55 to 150
150
W o
C o
C
1/8 September 2003
ESM4045DV
THERMAL DATA
R thj-case
R thj-case
R thc-h
Thermal Resistance Junction-case (transistor) Max
Thermal Resistance Junction-case (diode) Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.83
1.5
0.05
o
C/W o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit
I
CER
#
I
CEV
#
Collector Cut-off
Current (R
BE
= 5
Ω
)
Collector Cut-off
Current (V
BE
= -5)
V
CE
= V
CEV
V
CE
= V
CEV
T j
= 100 o
C
V
CE
= V
CEV
V
CE
= V
CEV
T j
= 100 o
C
1.5
20
1
13 mA mA mA mA
I
EBO
# Emitter Cut-off Current
(I
C
= 0)
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0) h
FE
∗
DC Current Gain
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
EB
= 5 V
I
C
= 0.2 A L = 25 mH
V clamp
= 450 V
I
C
= 35 A V
CE
= 5 V
450
220
1 mA
V
I
I
C
= 25 A I
C
= 25 A I
B
= 0.5 A
B
= 0.5 A T j
= 100 o
C
I
C
= 35 A I
B
= 2 A
I
C
= 35 A I
B
= 2 A T j
= 100 o
C
1.15
1.3
1.4
1.5
2
2
V
V
V
V
V
BE(sat)
∗
Base-Emitter
Saturation Voltage di
C
/dt Rate of Rise of
On-state Collector
V
CE
(3
µ s) Collector-Emitter
Dynamic Voltage
V
CE
(5
µ s) Collector-Emitter
Dynamic Voltage t s t f t c
Storage Time
Fall Time
Cross-over Time
I
C
= 35 A I
B
= 2 A
I
C
= 35 A I
B
= 2 A T j
= 100 o
C
I
V
CC
B1
= 300 V R
C
= 0.75 A T j
= 0 t
= 100 o
C p
= 3
µ s
I
V
CC
B1
= 300 V R
= 0.75 A T j
C
= 12
Ω
= 100 o
C
I
V
CC
B1
= 300 V R
= 0.75 A T j
C
= 12
Ω
= 100 o
C
I
V
C
= 25A V
BB
= -5 V R
CC
= 50 V
BB
= 0.6
Ω
V clamp
= 450 V I
L = 0.1 mH T
B1 j
= 0.5 A
= 100 o
C
200
2.3
2.3
250
4.5
2.5
3.2
0.25
0.75
3
8
4.5
5
0.5
1.5
V
V
A/
µ s
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
450 I
CWoff
= 42 A I
B1
= 2 A
V
BB
L = 0.06 mH R
T j
= -5 V V
CC
= 50 V
BB
= 0.6
Ω
= 125 o
C
V
F
∗
I
RM
F
= 35 A T
= 200 V I
F
= 35 A o
C Diode Forward Voltage I Obsolete Product(s) - Obsolete Product(s)
Current
V di
CC j
= 100 1.5
20
1.85
24
V
F
/dt = -200 A/
µ s L < 0.05
µ
H
= 100 o
C
A
V
V
V
µ s
µ s
µ s
To evaluate the conduction losses of the diode use the following equations:
V
F
= 1.5 + 0.001 I
F
P = 1.5 I
F(AV)
+ 0.001 I
2
F(RMS)
# See test circuits in databook introduction
2/8
Safe Operating Areas Thermal Impedance
ESM4045DV
Derating Curve Collector-emitter Voltage Versus base-emitter Resistance
Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
3/8
ESM4045DV
Reverse Biased SOA Foward Biased SOA
Reverse Biased AOA Forward Biased AOA
Switching Times Inductive Load Switching Times Inductive Load Versus
Temperature
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
4/8
Dc Current Gain Typical V
F
Versus I
F
ESM4045DV
Peak Reverse Current Versus di
F
/dt Turn-on Switching Test Circuit
Turn-on Switching Waveforms
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
5/8
ESM4045DV
Turn-on Switching Test Circuit Turn-off Switching Waveforms
Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
6/8
DIM.
F
F1
P
P1
S
E
E1
E2
G
G1
G2
A
A1
B
C
C2
D
D1
ESM4045DV
MIN.
11.8
8.9
7.8
0.75
1.95
37.8
31.5
25.15
23.85
14.9
12.6
3.5
4.1
4.6
4
4
30.1
ISOTOP MECHANICAL DATA
mm
TYP.
24.8
MAX.
12.2
9.1
8.2
0.85
2.05
38.2
31.7
25.5
24.15
15.1
12.8
4.3
4.3
5
4.3
4.4
30.3
MIN.
0.465
0.350
0.307
0.029
0.076
1.488
1.240
0.990
0.938
0.586
0.496
0.137
0.161
0.181
0.157
0.157
1.185
inch
TYP.
0.976
MAX.
0.480
0.358
0.322
0.033
0.080
1.503
1.248
1.003
0.950
0.594
0.503
1.169
0.169
0.196
0.169
0.173
1.193
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
P093A
7/8
ESM4045DV
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
Obsolete Product(s) - Obsolete Product(s) subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
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