®
BUT30V
NPN TRANSISTOR POWER MODULE
■
■
■
■
■
■
NPN TRANSISTOR
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
■
MOTOR CONTROL
■
■
SMPS & UPS
WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO(sus)
V
EBO
I
C
I
CM
I
B
I
BM
P tot
V isol
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
= 10 ms)
Base Current
Base Peak Current (t p
= 10 ms)
Total Dissipation at T c
= 25 o
C
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
200
125
7
100
150
20
30
250
2500
-55 to 150
150
Unit
V
A
A
W
A
A
V
V o
C o
C
1/7
BUT30V
THERMAL DATA
R thj-case
R thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.5
0.05
o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol
I
I
CER
CEV
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω
)
Collector Cut-off
Current (V
BE
= -5V)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
T c
= 100 o
C
V
CE
= V
CEV
V
CE
= V
CEV
T c
= 100 o
C
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0) h
FE
∗
DC Current Gain
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
V
V
I
C
C
EB
= 5 V
= 0.2 A L = 25 mH clamp
= 125 V
= 100 A V
CE
= 5
I
C
= 50 A I
B
= 2.5 A
I
C
= 50 A I
B
= 2.5 A T c
= 100 o
C
I
C
= 100 A I
B
= 10 A
I
C
= 100 A I
B
= 10 A T c
= 100 o
C
V
BE(sat) di
C
/dt
∗
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
V
CE
(3
µ s) Collector-Emitter
Dynamic Voltage
V
CE
(5
µ s) Collector-Emitter
Dynamic Voltage
I
C
= 50 A I
B
= 2.5 A
I
C
= 50 A I
B
= 2.5 A T c
= 100 o
C
I
C
= 100 A I
B
= 10 A
I
C
= 100 A I
B
= 10 A T c
= 100 o
C
I
V
CC
B1
= 300 V R
= 15 A T c
C
= 0 t p
= 100 o
C
= 3
µ s
I
V
CC
B1
= 300 V R
= 15 A T c
C
= 1
Ω
= 100 o
C
I
V
CC
B1
= 300 V R
= 15 A T c
C
= 1
Ω
= 100 o
C t t t s f c
Storage Time
Fall Time
Cross-over Time
I
V
C
= 100 A V
BB
CC
= -5 V R
BB
= 90 V
= 0.47
Ω
V clamp
= 125 V I
B1
= 10 A
L = 45
µ
H T c
= 100 o
C
V
CEW
Maximum Collector I
CWoff
= 150 A I
B1
= 10 A
Emitter Voltage
Without Snubber
V
BB
= -5 V V
L = 30
µ
H R
CC
BB
T c
= 125 o
C
= 90 V
= 0.5
Ω
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
125
270
125
Typ.
2.7
2
1
0.1
0.2
27
0.45
0.55
0.7
0.9
1.15
1.1
1.45
1.55
350
0.9
1.2
0.9
1.5
1.4
1.4
1.8
1.9
Max.
1
5
1
4
1
Unit mA mA mA mA mA
3.5
2.5
2
0.2
0.35
V
V
V
V
V
V
V
V
V
V
V
A/
µ s
V
µ s
µ s
µ s
2/7
Safe Operating Areas Thermal Impedance
BUT30V
Derating Curve Collector-emitter Voltage Versus
Base Emitter Resistance
Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage
3/7
BUT30V
Reverse Biased SOA Foward Biased SOA
Reverse Biased AOA Forward Biased AOA
Switching Times Inductive Load Switching Times Inductive Load Versus
Temperature
4/7
Dc Current Gain Turn-on Switching Test Circuit
BUT30V
Turn-on Switching Waveforms
(1) Fast electronic switch (2) Non-inductive load
Turn-off Switching Test Circuit Turn-off Switching Waveforms
(1) Fast electronic switch (2) Non-inductive load
(3) Fast recovery rectifier
5/7
BUT30V
DIM.
F
F1
P
P1
S
E
E1
E2
G
G1
G2
A
A1
B
C
C2
D
D1
MIN.
11.8
8.9
7.8
0.75
1.95
37.8
31.5
25.15
23.85
14.9
12.6
3.5
4.1
4.6
4
4
30.1
ISOTOP MECHANICAL DATA
mm
TYP.
24.8
MAX.
12.2
9.1
8.2
0.85
2.05
38.2
31.7
25.5
24.15
15.1
12.8
4.3
4.3
5
4.3
4.4
30.3
MIN.
0.465
0.350
0.307
0.029
0.076
1.488
1.240
0.990
0.938
0.586
0.496
0.137
0.161
0.181
0.157
0.157
1.185
inch
TYP.
0.976
MAX.
0.480
0.358
0.322
0.033
0.080
1.503
1.248
1.003
0.950
0.594
0.503
1.169
0.169
0.196
0.169
0.173
1.193
P093A
6/7
BUT30V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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