®
STP60NE06L-16
STP60NE06L-16FP
N - CHANNEL 60V - 0.014
Ω
- 60A TO-220/TO-220FP
STripFET
POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
■
■
STP60NE06L-16
STP60NE06L-16FP
60 V
60 V
< 0.016
Ω
< 0.016
Ω
TYPICAL R
DS(on)
= 0.014
Ω
AVALANCHE RUGGED TECHNOLOGY
60 A
35 A
■
■
■
■
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175 o
C OPERATING TEMPERATURE
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size
" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
■
■
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
1
2
3
TO-220 TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit Value
STP60NE06L-16 STP60NE06L-16FP
V
DGR
Drain- gate Voltage (R
GS
GS
= 0) V
DS
Drain-source Voltage (V
= 20 k
Ω
)
60
60
V
V
V
GS
I
D
Gate-source Voltage o
C o
C
60
42
±
15
35
24
V
A
A I
D
Drain Current (continuous) at T c
= 25
Drain Current (continuous) at T c
= 100
I
DM
(
•
) Drain Current (pulsed)
P tot
Total Dissipation at T c
= 25 o
C
240 140 A
150 45 W
W/ o
C Derating Factor 1 0.3
V
ISO
Insulation Withstand Voltage (DC) 2000 V dv/dt Peak Diode Recovery voltage slope 6
T stg
Storage Temperature -65 to 175
T j
Max. Operating Junction Temperature 175
(
•
) Pulse width limited by safe operating area ( 1 ) I
SD
≤
60 A, di/dt
≤
300 A/
µ s, V
DD
≤
V
(BR)DSS
, T j
≤
T
JMAX
V/ns o
C o
C
1/9 May 2000
STP60NE06L-16/FP
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
T l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
0.94
62.5
0.5
300
TO-220FP
2.7
o
C/W o
C/W o
C/W o
C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j
max)
Single Pulse Avalanche Energy
(starting T j
= 25 o
C, I
D
= I
AR
, V
DD
= 25V)
Max Value
60
400
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
I
DSS
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250
µ
A V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T c
= 125
o
C
V
GS
=
±
15 V
Min.
60
Typ.
ON (
∗
)
Symbol
V
GS(th)
R
DS(on)
I
D(o n)
Parameter Test Conditions
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
µ
A
Static Drain-source On
Resistance
V
GS
= 5V I
D
= 30 A
V
GS
= 10V I
D
= 30 A
On State Drain Current V
DS
> I
D(o n)
x R
DS(on )max
V
GS
= 10 V
Max.
1
10
±
100
Min.
1
Typ.
1.6
0.014
0.012
Max.
2.5
0.016
0.014
60
Unit
A mJ
Unit
V
Ω
Ω
A
Unit
V
µ
A
µ
A nA
DYNAMIC
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit fs
(
∗
)
Input Capacitance
V
DS
> I
D(o n)
x R
DS(on )max
I
V
DS
= 25 V f = 1 MHz V
D
=30 A
GS
= 0
30 g Forward Obsolete Product(s) - Obsolete Product(s)
4150
S pF C
C
C iss oss
Output Capacitance
Reverse Transfer
590
150 pF pF
Capacitance
2/9
STP60NE06L-16/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol t d(on ) t r
Parameter
Turn-on Delay Time
Rise Time
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
R
DD
G
= 30 V I
= 4.7
Ω
V
D
GS
= 30 A
= 5 V
(Resistive Load, see fig. 3)
V
DD
= 40 V I
D
= 60 A V
GS
= 5 V
SWITCHING OFF
Symbol t d(of f) t f
Parameter
Turn-off Delay Time
Fall Time t r(Voff) t f t c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
R
= 30 V I
G
=4.7
Ω
V
GS
D
= 30 A
= 5 V
(Resistive Load, see fig. 3)
V
DD
R
= 48 V I
D
G
= 4.7
Ω
V
GS
= 20 A
= 5 V
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions
I
I
SD
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage I
SD
= 60 A V
GS
= 0 t rr
Reverse Recovery
Time
I
SD
V
DD
= 60 A di/dt = 100 A/
µ s
= 30 V T
J
= 150 o
C
(see test circuit, fig. 5) Q rr
Reverse Recovery
Charge
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Min.
Typ.
50
155
Max.
Unit ns ns
55
15
30
70 nC nC nC
Min.
Typ.
125
25
Max.
Unit ns ns
45
220
280 ns ns ns
Min.
Typ.
Max.
60
240
1.5
85
300
7
Unit
A
A
V ns
µ
C
A
Safe Operating Area for TO-220FP
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
3/9
STP60NE06L-16/FP
Thermal Impedance for TO-220 Thermal Impedance forTO-220FP
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
4/9
Gate Charge vs Gate-source Voltage Capacitance Variations
STP60NE06L-16/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
5/9
STP60NE06L-16/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
6/9
DIM.
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
D1
E
F
F1
F2
G
A
C
D
STP60NE06L-16/FP
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
mm
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
inch
TYP.
MAX.
0.181
0.051
0.107
1.27
0.49
0.050
0.70
0.019
0.027
0.61
1.14
0.88
1.70
0.024
0.044
0.034
0.067
1.14
4.95
1.70
5.15
0.044
0.194
0.067
0.203
2.4
10.0
2.7
10.40
0.094
0.393
0.106
0.409
16.4
13.0
0.645
14.0
0.511
0.551
2.65
15.25
2.95
15.75
0.104
0.600
0.116
0.620
6.2
3.5
3.75
6.6
3.93
3.85
0.244
0.137
0.147
0.260
0.154
0.151
L2
Obsolete Product(s) - Obsolete Product(s)
L5
L7
L6
L9
L4
P011C
7/9
DIM.
G
G1
H
L2
F
F1
F2
A
B
D
E
L3
L4
L6
L7
Ø
STP60NE06L-16/FP
0.75
1.15
1.15
4.95
2.4
10
MIN.
4.4
2.5
2.5
0.45
28.6
9.8
15.9
9
3
TO-220FP MECHANICAL DATA
mm
TYP.
16
1
1.7
1.7
5.2
2.7
10.4
MAX.
4.6
2.7
2.75
0.7
30.6
10.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.645
0.366
0.126
L6
L7
L3
Obsolete Product(s) - Obsolete Product(s)
L4
1 2 3
L2
8/9
STP60NE06L-16/FP
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s) of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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