STP9NK50Z - STP9NK50ZFP
STB9NK50Z - STB9NK50Z-1
N-CHANNEL 500V - 0.72
Ω
- 7.2A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected SuperMESH™ MOSFET
TYPE V
DSS
R
DS(on)
I
D
Pw
■
■
STP9NK50Z
STP9NK50ZFP
STB9NK50Z
STB9NK50Z-1
500 V
500 V
500 V
500 V
< 0.85
Ω
< 0.85
Ω
< 0.85
Ω
< 0.85
Ω
7.2 A
7.2 A
7.2 A
7.2 A
TYPICAL R
DS
(on) = 0.72
Ω
EXTREMELY HIGH dv/dt CAPABILITY
■
■
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
■
■
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
110 W
30 W
110 W
110 W
TO-220
1
D
2
PAK
3
1
2
3
TO-220FP
I
2
PAK
1
2
3
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
■
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
STP9NK50Z
STP9NK50ZFP
MARKING
P9NK50Z
P9NK50ZFP
STB9NK50ZT4 B9NK50Z
STB9NK50Z-1 B9NK50Z
June 2004
PACKAGE
TO-220
TO-220FP
D
2
PAK
I
2
PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
1/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
V
DS
V
DGR
V
GS
Drain-source Voltage (V
GS
Drain-gate Voltage (R
GS
Gate- source Voltage
= 0)
= 20 k
Ω
)
I
D
I
D
I
DM
( )
P
TOT
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
C
C
= 25°C
= 100°C
V
ESD(G-S) dv/dt (1)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
Peak Diode Recovery voltage slope
V
ISO
Insulation Withstand Voltage (DC)
T j
T stg
Operating Junction Temperature
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
7.2A, di/dt
≤
200A/µs, V
DD
≤
V
(BR)DSS
, T j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
STP9NK50Z
STB9NK50Z
STB9NK50Z-1
Value
STP9NK50ZFP
500
500
± 30
7.2
4.5
28.8
110
0.88
7.2 (*)
4.5 (*)
28.8 (*)
30
0.24
3500
4.5
2500
-55 to 150
-55 to 150
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
T l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
Single Pulse Avalanche Energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
TO-220 / D
2
PAK /
I
2
PAK
1.14
62.5
300
TO-220FP
4.2
Max Value
7.2
190
Unit
A
A
A
V
V
V
W
W/°C
V
V/ns
V
°C
°C
°C/W
°C/W
°C
Unit
A mJ
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
2/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V
(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
500
Typ.
Max.
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
1
50
±10
V
GS(th)
R
DS(on)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 10V, I
D
= 3.6 A
3 3.75
0.72
4.5
0.85
DYNAMIC
Symbol g fs
(1)
C iss
C oss
C rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C oss eq.
(3) Equivalent Output
Capacitance
SWITCHING ON
Symbol Parameter t d(on) t r
Turn-on Delay Time
Rise Time
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol t d(off) t f
Parameter
Turn-off Delay Time
Fall Time t r(Voff) t f t c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DS
= 15 V
,
I
D
= 3.6 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
V
GS
= 0V, V
DS
= 0V to 400V
Test Conditions
V
DD
R
G
= 250 V, I
D
= 4.7
Ω
V
GS
= 3.6 A
= 10 V
(Resistive Load see, Figure 3)
V
DD
V
GS
= 400V, I
D
= 10V
= 7.2 A,
Test Conditions
V
DD
R
G
= 250 V, I
= 4.7
Ω
V
D
GS
= 3.6 A
= 10 V
(Resistive Load see, Figure 3)
V
DD
R
G
= 400V, I
D
= 4.7
Ω,
V
GS
= 7.2 A,
= 10V
(Inductive Load see, Figure 5)
Min.
Min.
Min.
Typ.
5.3
910
125
30
75
Typ.
17
20
32
6
18
Typ.
45
22
15
13
30
Max.
Max.
Max.
Unit
S pF pF pF pF
Unit
V
µA
µA
µA
V
Ω
Unit ns ns ns ns ns
Unit ns ns nC nC nC
SOURCE DRAIN DIODE
Symbol Parameter
I
I
SD
SDM
(2)
V
SD
(1) t rr
Q rr
I
RRM
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
I
SD
= 7.2 A, V
GS
= 0
I
SD
V
DD
= 7.2 A, di/dt = 100A/µs
= 40 V, T j
= 150°C
(see test circuit, Figure 5)
Min.
Typ.
238
1.5
12.6
Max.
7.2
28.8
1.6
Unit
A
A
V ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss when V
DS increases from 0 to 80%
V
DSS
.
3/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP
Output Characteristics Transfer Characteristics
4/13
Transconductance
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
DIM.
L4
L5
L6
L7
F2
G
G1
H2
L2
L9
DIA.
D1
E
F
F1
A
C
D
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
mm
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
inch
TYP.
MAX.
0.181
0.051
0.107
1.27
0.49
0.050
0.70
0.019
0.027
0.61
1.14
0.88
1.70
0.024
0.044
0.034
0.067
1.14
4.95
2.4
10.0
1.70
5.15
2.7
10.40
16.4
0.044
0.194
0.094
0.393
0.067
0.203
0.106
0.409
0.645
13.0
2.65
15.25
6.2
3.5
3.75
14.0
2.95
15.75
6.6
3.93
3.85
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
8/13
DIM.
L6
L7
Ø
H
L2
L3
L4
L5
F
F1
F2
G
G1
A
B
D
E
28.6
9.8
2.9
15.9
9
3
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
TO-220FP MECHANICAL DATA
mm.
TYP
16
30.6
10.6
3.6
16.4
9.3
3.2
MAX.
4.6
2.7
2.75
0.7
1
1.5
1.5
5.2
2.7
10.4
1.126
.0385
0.114
0.626
0.354
0.118
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
inch
TYP.
0.630
1.204
0.417
0.141
0.645
0.366
0.126
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
L6
L7
L3
L2
L5
L4
1 2 3
9/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
D
2
PAK MECHANICAL DATA
mm.
TYP
DIM.
L3
M
R
V2
E
E1
G
L
L2
C
C2
D
D1
A
A1
A2
B
B2
10
4.88
15
1.27
1.4
2.4
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
0º
8
8.5
0.4
0.393
0.192
0.590
0.050
0.055
0.094
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
10.4
5.28
15.85
1.4
1.75
3.2
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
8º inch
TYP.
0.315
0.334
0.015
0.208
0.625
0.055
0.068
0.126
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
10/13
1
DIM.
e1
E
L
L1 c c2
D e
A
A1 b b1
L2
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
4.95
10
13
3.50
0.49
1.23
8.95
2.40
MIN.
4.40
2.40
0.61
1.14
1.27
TO-262 (I
2
PAK) MECHANICAL DATA mm.
TYP inch
TYP.
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
MAX.
4.60
2.72
0.88
1.70
1.40
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
MIN.
0.173
0.094
0.024
0.044
0.050
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
MAX.
0.181
0.107
0.034
0.066
0.055
11/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
D
2
PAK FOOTPRINT TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
D
G
N
T
A
B
C
REEL MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0795
24.4
26.4
0.960
1.039
100 3.937
30.4
1.197
BASE QTY
1000
BULK QTY
1000
E
F
K0
P0
A0
B0
D
D1
P1
P2
R
T
W
TAPE MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
10.5
10.7
0.413
0.421
15.7
15.9
0.618
0.626
1.5
1.6
0.059
0.063
1.59
1.61
0.062
0.063
1.65
1.85
0.065
0.073
11.4
11.6
0.449
0.456
4.8
3.9
5.0
0.189
0.197
4.1
0.153
0.161
11.9
12.1
0.468
0.476
1.9
2.1
0.075
0.082
50 1.574
0.25
0.35
0.0098 0.0137
23.7
24.3
0.933
0.956
* on sales type
12/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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