STGP10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A
low-loss in TO-220 package
Datasheet - production data
TAB
1
2
3
Features
6 µs of short-circuit withstand time
V
CE(sat)
= 1.55 V (typ.) @ I
C
= 10 A
Tight parameter distribution
Safer paralleling
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: T
J
= 175 °C
TO-220
Figure 1: Internal schematic diagram
Order code
STGP10M65DF2
Applications
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series
IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V
CE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling operation.
Table 1: Device summary
Marking Package Packing
G10M65DF2 TO-220 Tube
April 2017 DocID027352 Rev 5
This is information on a product in full production.
1/17 www.st.com
Contents
Contents
STGP10M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 12
4 Package information ..................................................................... 13
4.1
TO-220 type A package information ................................................ 14
5 Revision history ............................................................................ 16
2/17 DocID027352 Rev 5
STGP10M65DF2
1 Electrical ratings
Symbol
V
CES
I
C
I
CP
(1)
V
GE
I
F
I
FP
(1)
P
TOT
T
STG
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
20
10
40
±20
20
10
40
115
- 55 to 150
- 55 to 175
Unit
V
A
A
V
A
A
W
°C
Value
1.3
2.08
62.5
Unit
°C/W
DocID027352 Rev 5 3/17
Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 250
μA
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 10 A
V
GE
= 15 V, I
C
= 10 A,
T
J
= 125 °C
V
GE
= 15 V, I
C
= 10 A,
T
J
= 175 °C
I
F
= 10 A
V
F
Forward on-voltage
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
I
GES
I
F
= 10 A, T
J
= 125 °C
I
F
= 10 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 0 V, V
CE
= 650 V
Gate-emitter leakage current V
CE
= 0 V, V
GE
= ±20 V
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions
C ies
C oes
C res
Q g
Q ge
Q gc
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
V
CC
= 520 V, I
C
= 10 A,
V
GE
= 0 to 15 V
(see Figure 30: " Gate charge test circuit" )
STGP10M65DF2
Min. Typ. Max. Unit
650
5
-
-
-
1.55 2.0
1.9
2.1
1.5 2.25
1.3
1.2
6 7
25
V
±250 µA
V
µA
28
6
12
-
-
-
V
V
Min. Typ. Max. Unit
- 840
- 63
-
- pF
- 16 - nC
4/17 DocID027352 Rev 5
STGP10M65DF2 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t sc
Short-circuit withstand time
V
CE
= 400 V, I
C
= 10 A,
V
GE
= 15 V, R
G
= 22
Ω
(see Figure 29: " Test circuit for inductive load switching" )
V
CE
= 400 V, I
C
= 10 A,
V
GE
= 15 V, R
G
= 22
Ω,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
V
CC
≤ 400 V, V
GE
= 13 V,
T
Jstart
= 150 °C
V
CC
≤ 400 V, V
GE
= 15 V,
T
Jstart
= 150 °C
18
9
890
90
170
0.26
0.4
0.66
19
7.4
1086
91
92
0.12
0.27
0.39
10
6
-
-
µs
µs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- ns ns
A/µs ns ns mJ mJ mJ ns ns
A/µs ns ns mJ mJ mJ
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 10 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/µs
(see Figure 29: " Test circuit for inductive load switching" )
I
F
= 10 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/μs,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
-
-
-
-
-
-
96
373
13
661
-
-
52
201
- 1352
- 19
405
150
-
-
-
-
-
-
-
-
-
- ns nC
A
A/µs
µJ ns nC
A
A/µs
µJ
DocID027352 Rev 5 5/17
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
STGP10M65DF2
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
6/17
Figure 6: V
CE(sat)
vs. junction temperature Figure 7: V
CE(sat)
vs. collector current
DocID027352 Rev 5
STGP10M65DF2
Figure 8: Collector current vs. switching frequency
Electrical characteristics
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode V
F
vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction temperature
Figure 13: Normalized V
(BR)CES
vs. junction temperature
DocID027352 Rev 5 7/17
Electrical characteristics
Figure 14: Capacitance variations
STGP10M65DF2
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage
8/17 DocID027352 Rev 5
STGP10M65DF2
Figure 20: Short-circuit time and current vs. V
GE
Electrical characteristics
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode current slope
Figure 24: Reverse recovery time vs. diode current slope
Figure 25: Reverse recovery charge vs. diode current slope
9/17 DocID027352 Rev 5
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
STGP10M65DF2
K
δ=0.5
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
10
-1
0.2
0.1
0.02
0.01
-2
10
10
-5
Single pulse
10
-4
10
-3
0.05
Zth=k Rthj-c
δ=tp/t
10
-2 tp t
10
-1 t p
(s)
10/17 DocID027352 Rev 5
STGP10M65DF2
Figure 28: Thermal impedance for diode
Electrical characteristics
DocID027352 Rev 5 11/17
Test circuits
3 Test circuits
Figure 29: Test circuit for inductive load switching
STGP10M65DF2
Figure 30: Gate charge test circuit
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
AM01504v 1
Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt
I
F
I
RRM
Q rr t s t rr t f
I
RRM
10%
V
RRM t dv/dt
AM01507v1
12/17 DocID027352 Rev 5
STGP10M65DF2
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID027352 Rev 5 13/17
Package information
4.1 TO-220 type A package information
Figure 33: TO-220 type A package outline
STGP10M65DF2
14/17 DocID027352 Rev 5
STGP10M65DF2
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 8: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
Package information
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
Max.
4.60
0.88
1.55
0.70
15.75
DocID027352 Rev 5 15/17
Revision history
5
STGP10M65DF2
Revision history
Date Revision
Table 9: Document revision history
Changes
10-Feb-2015
23-Apr-2015
31-Jul-2015
19-Oct-2015
07-Apr-2017
1
2
3
4
5
First release.
Minor text edits throughout document
Document status promoted to 'Production data'
In Section 2 Electrical characteristics:
- updated Table 4: Static characteristics
- updated Table 5: Dynamic characteristics
- updated Table 6: IGBT switching characteristics (inductive load)
- updated Table 7: Diode switching characteristics (inductive load)
Added Section 2.1 Electrical characteristics (curves)
Updated Table 7: Diode switching characteristics (inductive load)
Updated Table 5: "Dynamic characteristics" and Table 6: "IGBT switching characteristics (inductive load)".
Updated Figure 8: "Collector current vs. switching frequency".
Modified title, features and applications on cover page
Modified Table 4: "Static characteristics" , Table 6: "IGBT switching characteristics (inductive load)"
and Table 7: "Diode switching characteristics (inductive load)"
Minor text changes.
16/17 DocID027352 Rev 5
STGP10M65DF2
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DocID027352 Rev 5 17/17
