STGB4M65DF2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datasheet - production data
TAB
2
1
3
D²PAK
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
V
CE(sat)
= 1.6 V (typ.) @ I
C
= 4 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series
IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V
CE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code
STGB4M65DF2
Table 1: Device summary
Marking Package
G4M65DF2 D²PAK
Packing
Tape and reel
November 2016 DocID028667 Rev 4
This is information on a product in full production.
1/18 www.st.com
Contents
Contents
STGB4M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1
4.2
D²PAK (TO-263) type A package information ................................. 12
Packing information ......................................................................... 15
5 Revision history ............................................................................ 17
2/18 DocID028667 Rev 4
STGB4M65DF2
1 Electrical ratings
Symbol
V
CES
I
C
I
CP
(1)
V
GE
I
F
I
FP
(1)
P
TOT
T
STG
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
8
4
16
±20
8
4
16
68
- 55 to 150
- 55 to 175
Unit
A
A
A
W
°C
°C
V
A
A
A
V
Value
2.2
5
62.5
Unit
°C/W
°C/W
°C/W
DocID028667 Rev 4 3/18
Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 250 µA
V
CE(sat)
V
F
Collector-emitter saturation voltage
Forward on-voltage
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
I
GES
V
GE
= 15 V, I
C
= 4 A
V
GE
= 15 V, I
C
= 4 A,
T
J
= 125 °C
V
GE
= 15 V,
I
C
= 4 A,T
J
= 175 °C
I
F
= 4 A
I
F
= 4 A, T
J
= 125 °C
I
F
= 4 A, T
J
= 175 °C
V
V
CE
GE
= V
GE
, I
= 0 V, V
C
= 250 µA
CE
= 650 V
Gate-emitter leakage current V
CE
= 0 V, V
GE
= ± 20 V
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions
C ies
C oes
C res
Q g
Q ge
Q gc
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
V
CC
= 520 V, I
C
= 4 A,
V
GE
= 15 V
(see Figure 30: " Gate charge test circuit" )
STGB4M65DF2
Min. Typ. Max. Unit
5
650
1.6 2.1
V
1.9
V
2.1
1.9
1.7
1.6
6 7
25
V
V
µA
±250 µA
Min. Typ. Max. Unit
-
-
-
-
-
-
369
24.8
8
15.2
3
7
-
-
-
-
-
- pF nC
4/18 DocID028667 Rev 4
STGB4M65DF2 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t sc
Short-circuit withstand time
V
CE
= 400 V, I
C
= 4 A,
V
GE
= 15 V, R
G
= 47
Ω
(see Figure 29: " Test circuit for inductive load switching" )
V
CE
= 400 V, I
C
= 4 A,
V
GE
= 15 V, R
G
= 47 Ω,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
V
CC
≤ 400 V, V
GE
= 15 V,
T
Jstart
= 150 °C
V
CC
≤ 400 V, V
GE
= 13 V,
T
Jstart
= 150 °C
12
6.9
480
86
120
0.040 -
0.136 -
-
-
0.176 -
-
-
-
11.6
8
410
85
211
0.067 -
0.210 -
-
-
-
-
-
0.277 -
6
10
-
-
µs
µs ns ns
A/µs ns ns mJ mJ mJ ns ns
A/µs ns ns mJ mJ mJ
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 4 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 800 A/µs
(see Figure 29: " Test circuit for inductive load switching" )
I
F
= 4 A, V
R
= 400 V,
V
GE
= 15 V, T
J
= 175 °C, di/dt = 800 A/µs
(see Figure 29: " Test circuit for inductive load switching" )
-
-
-
-
-
-
-
-
-
-
133
140
5
520
15
236
370
6.6
378
32
-
-
-
-
-
-
-
-
-
- ns nC
A
A/µs
µJ ns nC
A
A/µs
µJ
DocID028667 Rev 4 5/18
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
STGB4M65DF2
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
Figure 6: V
CE(sat)
vs. junction temperature Figure 7: V
CE(sat)
vs. collector current
6/18 DocID028667 Rev 4
STGB4M65DF2
Figure 8: Collector current vs. switching frequency
Electrical characteristics
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction temperature
Figure 13: Normalized V
(BR)CES
vs. junction temperature
DocID028667 Rev 4 7/18
Electrical characteristics
Figure 14: Capacitance variations
STGB4M65DF2
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage
8/18 DocID028667 Rev 4
STGB4M65DF2
Figure 20: Short-circuit time and current vs.
V
GE
Electrical characteristics
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode current slope
Figure 24: Reverse recovery time vs. diode current slope
Figure 25: Reverse recovery charge vs. diode current slope
Q rr
(nC)
IGBT170320161123RRQ
V
CC
= 400 V, V
GE
= 15 V, I
F
= 4 A,
T j
= 175 °C
370
365
360
355
350
0 150 300 450 600 750 di/dt (A/µs)
DocID028667 Rev 4 9/18
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
STGB4M65DF2
10/18
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
10
-1
0.2
0.1
0.02
0.01
-2
10
10
-5
Single pulse
10
-4
10
-3
0.05
Zth=k Rthj-c
δ=tp/t
10
-2 tp t
10
-1 t p
(s)
Figure 28: Thermal impedance for diode
CG20930
K
δ = 0.5
10 -1
δ = 0.2
δ = 0.1
10 -2
10 -5 p p
/
/
Ƭ
δ = 0.05
δ = 0.02
δ = 0.01
SINGLE PULSE
10 -4 10 -3 10 -2 t t
10 -1 t p
(s)
DocID028667 Rev 4
STGB4M65DF2
3 Test circuits
Figure 29: Test circuit for inductive load switching
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
Test circuits
Figure 30: Gate charge test circuit
AM01504v 1
Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt
I
F
I
RRM
Q rr t s t rr t f
I
RRM
10%
V
RRM t dv/dt
AM01507v1
DocID028667 Rev 4 11/18
Package information
4
4.1
Package information
STGB4M65DF2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
D²PAK (TO-263) type A package information
Figure 33: D²PAK (TO-263) type A package outline
12/18 DocID028667 Rev 4
0079457_A_rev22
STGB4M65DF2
Dim.
D2
E
E1
E2 e e1
H c c2
D
D1
A
A1 b b2
J1
L
L1
L2
R
V2
Package information
Table 8: D²PAK (TO-263) type A package mechanical data mm
Min. Typ. Max.
4.88
15
2.49
2.29
1.27
1.30
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
8.50
6.85
0.4
7.75
1.30
8.70
7.05
2.54
5.28
15.85
2.69
2.79
1.40
1.75
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
0° 8°
DocID028667 Rev 4 13/18
Package information STGB4M65DF2
Figure 34: D²PAK (TO-263) recommended footprint (dimensions are in mm)
14/18 DocID028667 Rev 4
STGB4M65DF2
4.2 Packing information
Figure 35: Tape outline
Package information
DocID028667 Rev 4 15/18
Package information
Figure 36: Reel outline
STGB4M65DF2
16/18
Dim.
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
E
F
Min.
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
Table 9: D²PAK tape and reel mechanical data
Tape Reel mm
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
Dim.
Min.
A
B
C
D
G
N
T
Base quantity
Bulk quantity
1.5
12.8
20.2
24.4
100
0.35
24.3 mm
Max.
330
13.2
26.4
30.4
1000
1000
DocID028667 Rev 4
STGB4M65DF2
5
Revision history
Revision history
Date Revision
Table 10: Document revision history
Changes
23-Nov-2015 1
17-Mar-2016
21-Mar-2016
21-Nov-2016
2
3
4
First release.
Modified: features in cover page
Modified: Table 2: "Absolute maximum ratings" , Table 4: "Static characteristics" , Table 5: "Dynamic characteristics" , Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)"
Added: Section 2: "Electrical characteristics"
Minor text changes
Modified: schematic in cover page
Datasheet promoted from preliminary data to production data
Minor text changes
Updated Table 2: "Absolute maximum ratings"
Updated Figure 25: "Reverse recovery charge vs. diode current slope"
Updated Figure 32: " Diode reverse recovery waveform"
DocID028667 Rev 4 17/18
STGB4M65DF2
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18/18 DocID028667 Rev 4
