2N5153HR
Datasheet
Rad-Hard 80 V, 5 A PNP bipolar transistor
3
2
1
2
3
1
TO-257
SMD.5
Base and Emitter are inverted for
2N5153RSRHRx and 2N5153SRHRx series
Product status link
2N5153HR
AM3128V1_n
Features
V
CEO
I
C
(max.) h
FE
at
5 V, 2.5 A
> 70
Operating temperature range
-65 °C to +200 °C 80 V 5 A
• Hermetic package
• ESCC qualified
• Up to 100 krad(Si) low dose rate
Description
The 2N5153HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID).
Qualified as per ESCC 5204/002 specification and available in SMD.5 and TO-257 hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for power suppliers, battery switch and linear bias supply circuits.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Device
Qualification system
2N5153ESYHRx ESCC Flight
2N5153RESYHRx ESCC Flight
2N5153RSHRx
2N5153SHRx
2N5153RSRHRx
2N5153SRHRx
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
Product summary
Agency specification
5204/002
5204/002
5204/002
5204/002
5204/002
5204/002
Package
TO-257
TO-257
Remarks
-
100 krad
SMD.5
100 krad, emitter on pin 1
SMD.5
Emitter on pin 1
SMD.5
100 krad, emitter on pin 2
SMD.5
Emitter on pin 2
DS6099 - Rev 11 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
2N5153HR
Electrical ratings
Electrical ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
STG
T
J
Table 1. Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Total dissipation at T amb
≤ 25 °C for TO-257 and SMD.5
Total dissipation at T case
≤ 25 °C for TO-257 and SMD.5
Storage temperature range
Max. operating junction temperature
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
100
80
5.5
5
3.3
35
-65 to 200
200
A
W
W
Unit
V
V
V
°C
°C
Value for TO-257 and SMD.5
5
53
Unit
°C/W
°C/W
DS6099 - Rev 11 page 2/13
2
2N5153HR
Electrical characteristics
Electrical characteristics
Table 3. Electrical characteristics (T amb
= 25 °C unless otherwise specified)
V
V
V
Symbol
I
I
I
CES
CEO
EBO
(BR)CEO
(1)
CE(sat)
(1)
BE(sat)
(1)
h
C t t h
FE fe obo on off
Parameter
Collector cut-off current
Test conditions
V
CB
= 60 V, I
E
= 0 A
V
CB
= 60 V, I
E
= 0 A,
T amb
= 150 °C
Collector cut-off current
Emitter cut-off current
V
CE
= 40 V, I
B
= 0 A
V
EB
= 4 V, I
C
= 0 A
V
EB
= 5.5 V, I
C
= 0 A
Collector-emitter breakdown voltage I
C
= 100 mA, I
B
= 0 A
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
= 5 A, I
B
= 0.5 A
I
C
= 2.5 A, I
B
= 0.25 A
I
C
= 5 A, I
B
= 0.5 A
I
C
= 50 mA, V
CE
= 5 V
DC current gain
AC forward current transfer ratio
Output capacitance
Turn-on time
Turn-off time
I
C
= 2.5 A, V
CE
= 5 V
I
C
= 5 A, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V, T amb
= -55 °C
I
C
= 500 mA, f = 20 MHz, V
CE
= 5 V
I
E
= 0 A, f = 1 MHz, V
CB
= 10 V
V
CC
= 30 V, V
BB
= 4 V,
V in
≈ 51 V, I
C
= 5 A,
I
B1
= I
B2
= 0.5 A
1. Pulsed duration = 300 µs, duty cycle ≤ 2%
80
50
70
40
35
3.5
Min.
Max.
Unit
1
µA
10
1.5
1.45
2.2
50
1
1
200
250
0.5
1.3
V pF
µs
µs
µA
µA mA
V
V
Voltage and current values are intended as negative.
DS6099 - Rev 11 page 3/13
2N5153HR
Electrical characteristics (curves)
3 h
FE
Electrical characteristics (curves)
Figure 1. h
FE
at V
CE
= 5 V
-55°C
25°C
125°C
AM12794v1 V
CE(sat)
(V)
Figure 2. V
CE(sat)
at h
FE
= 10
AM12795v1
100
10
0.01
0.1
Ic (A)
1
Figure 3. V
BE(sat)
at h
FE
= 10
V
BE(sat)
(V)
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.01
10
AM12796v1
0.1
Ic (A)
1
-55°C
25°C
125°C
10
0.1
-55°C
25°C
125°C
0.01
0.01
0.1
Ic (A)
1 10
V
BE(on)
(V)
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.1
Figure 4. V
BEON
at V
CE
= 5 V
AM12797v1
1
Ic (A)
-55°C
25°C
125°C
10
DS6099 - Rev 11 page 4/13
3.1
Test circuits
Figure 5. ESCC resistive load switching test circuit
2N5153HR
Test circuits
Note:
Note:
(1) Fast electronic switch
(2) Non-inductive resistor
DS6099 - Rev 11 page 5/13
4
2N5153HR
Radiation hardness assurance
Radiation hardness assurance
This products is guaranteed in radiation as per ESCC 22900 and in compliance with ESCC 5204/002 specification.
Each lot is tested in radiation according to the following procedure:
• Radiation condition of 0.1 rad (Si)/s
•
•
Test of 11 samples by wafer, 5 biased at 80% of V
(BR)CEO
, 5 unbiased and for reference
Acceptance criteria of each wafer at 100 krad if all 10 samples comply with the post radiation electrical characteristics as per
Table 4 .
• Radiation verification test (RVT) report is delivered with the lot manufactured with the wafer of the tested samples
RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si), post annealing at 24 hour / 25°C and and post annealing at 168 hours / 100°C.
Table 4. ESCC 5204/002 post radiation electrical characteristics (T amb
= 25 °C unless otherwise specified)
V
V
V
Symbol
I
CES
I
CEO
(BR)CEO
(1)
CE(sat)
(1)
BE(sat)
(1)
[h
I
EBO
FE
] (1)
Parameter Test conditions
Collector cut-off current V
CB
= 60 V, I
E
= 0 A
Collector cut-off current
Emitter cut-off current
V
CE
= 40 V, I
B
= 0 A
V
EB
= 4 V, I
C
= 0 A
V
EB
= 5.5 V, I
C
= 0 A
Collector-emitter breakdown voltage I
C
= 100 mA, I
B
= 0 A
Collector-emitter saturation voltage
Base-emitter saturation voltage
Post irradiation gain calculation
(2)
I
C
= 5 A, I
B
= 0.5 A
I
C
= 2.5 A, I
B
= 0.25 A
I
C
= 5 A, I
B
= 0.5 A
I
C
= 50 mA, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V
I
C
= 5 A, V
CE
= 5 V
Min.
80
[25]
[35]
[20]
Max.
1
50
1
1
1.5
1.45
2.2
200
Unit
µA
µA
µA mA
V
V
V
1. Pulsed duration = 300 µs, duty cycle ≤ 2%
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on completion of irradiation testing and after each annealing step if any, is as specified in MIL-STD-750 method 1019.
Voltage and current values are intended as negative.
DS6099 - Rev 11 page 6/13
5
5.1
2N5153HR
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-257 package information
Figure 6. TO-257 package outline
DS6099 - Rev 11 page 7/13
Note:
Dim.
e
E
D
D1
D2
A
A1
A2 b b1
P
R
M
N
H
L
L1
The case is not connected to any pin.
Min.
16.51
10.41
-
2.41
10.41
4.83
0.89
2.91
0.64
0.64
5.13
15.24
13.39
2.16
-
3.56
-
Table 5. TO-257 package mechanical data mm
Typ.
16.64
10.54
-
2.54
10.54
4.95
1.02
3.05
-
0.76
5.25
15.88
13.51
2.29
-
3.68
1.65
2N5153HR
TO-257 package information
Max.
16.76
10.67
0.97
2.67
10.67
5.08
1.14
3.18
1.02
0.89
5.38
16.51
13.64
2.41
0.71
3.81
-
DS6099 - Rev 11 page 8/13
5.2
SMD.5 package information
Figure 7. SMD.5 package outline
2N5153HR
SMD.5 package information
Note:
Dim.
A
A1 b b1 b2 b3
D
D1
E e
The lid is not connected to any pin.
Table 6. SMD.5 package mechanical data mm
Typ.
Min.
2.84
0.25
7.13
5.58
2.28
2.92
10.03
0.76
7.39
0.38
7.26
5.72
2.41
3.05
10.16
7.52
1.91
Max.
3.30
0.51
7.39
5.84
2.54
3.18
10.28
7.64
DS6099 - Rev 11 page 9/13
6
Ordering information
Table 7. Ordering information
Part number
Agency specification
Quality level
Radiatio n level
Pin-out Package Weight Lead finish Marking
(1)
Packing
2N5153ESY1 -
Engineering model
2N5153ESY1 + BeO
Gold
2N5153ESYHRG 5204/002/04
2N5153ESYHRT 5204/002/05
2N5153RESYHRG 5204/002/04R
2N5153RESYHRT 5204/002/05R
ESCC
-
-
100 krad
100 krad
-
-
-
-
TO-257 5 g
Solder dip
Gold
Solder dip
520400204 + BeO
520400205 + BeO
520400204R + BeO
520400205R + BeO
Strip pack
2N5153S1
2N5153RSHRG
2N5153RSHRT
2N5153SHRG
2N5153SHRT
2N5153SHRTW
2N5153SHRGW
2N5153SR1
-
5204/002/06R
5204/002/09R
2N5153RSHRTW 5204/002/09R
2N5153RSHRGW 5204/002/06R
5204/002/06
5204/002/09
5204/002/09
5204/002/06
-
2N5153RSRHRG 5204/002/07R
2N5153RSRHRT 5204/002/10R
2N5153RSRHRTW 5204/002/10R
2N5153SRHRG
2N5153SRHRT
2N5153SRHRTW
5204/002/07
5204/002/10
5204/002/10
Engineering model
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
Engineering model
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
-
-
-
-
-
-
Emitter on pin 1
100 krad Emitter on pin 1
100 krad Emitter on pin 1
100 krad Emitter on pin 1
100 krad Emitter on pin 1
Emitter on pin 1
Emitter on pin 1
Emitter on pin 1
Emitter on pin 1
Emitter on pin 2
100 krad Emitter on pin 2
100 krad Emitter on pin 2
100 krad Emitter on pin 2
-
-
-
Emitter on pin 2
Emitter on pin 2
Emitter on pin 2
SMD.5
1 g
Gold
Solder dip
Gold
Solder dip
Gold
Solder dip
Gold
Solder dip
2N5153S1
520400206R
520400209R
520400209R
520400206R
520400206
520400209
520400209
520400206
2N5153SR1
520400207R
520400210R
520400210R
520400207
520400210
520400210
Strip pack
Tape and reel
Strip pack
Tape and reel
Strip pack
Tape and reel
Strip pack
Tape and reel
1. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot.
Contact ST sales office for information about specific conditions for products in die form.
7
7.1
7.2
2N5153HR
Other information
Other information
Date code
Date code information is described in the table below.
Table 8. Date codes
Model
EM
ESCC
1. yy = year, ww = week number, N = lot index in the week.
Date codes (1)
3yywwN yywwN
Documentation
The table below provide a summary of the documentation provided with each type of products.
Table 9. Default documentation provided with the parts
Quality level
Engineering model
ESCC
ESCC
Radiation level
-
-
100 Krad
Documentation
-
Certificate of conformance.
ESCC qualification maintenance lot reference.
Certificate of conformance.
ESCC qualification maintenance lot reference.
Radiation data
(1) at 30 / 50 / 70 / 100 krad at 0.1 rad / s.
1. For key parameters on 5 biased parts + 5 unbiased parts from the same wafer as the delivered part. See Radiation hardness assurance for details.
DS6099 - Rev 11 page 11/13
2N5153HR
Revision history
Date
10-Dec-2008
08-Jan-2010
12-Sep-2012
12-Dec-2013
28-Mar-2014
29-Apr-2015
04-Apr-2016
29-Apr-2016
28-Oct-2016
03-Jun-2020
05-Oct-2021
4
5
6
7
8
9
10
11
Table 10. Document revision history
Version
1
2
3
Changes
Initial release.
Modified Table 1: Device summary.
Added: Section 3: Electrical characteristics (curves).
Updated Table 1: Device summary and Section 5: Package information.
Added Section 4: Radiation hardness assurance, Section 6: Ordering information and Section 7: Shipping details.
Updated Table 1: Device summary and Table 10: Ordering information.
Minor text changes.
Added Figure 6.
Updated Section 5.1: TO-257 package information.
Added part number 2N5153RSRHRG. Document updated accordingly.
Updated Section 5.1: TO-257 package information.
Updated title, package silhouette, Figure 1: Internal schematic diagram and
Table 1: Device summary in cover page.
Updated Section 5: Package information and Section 6: Ordering information.
Minor text changes.
Added Table 6: Product mass summary.
Removed TO-39 package information.
Updated Section 5.1 TO-257 package information
,
Section 5.2 SMD.5
package information and Ordering information.
Minor text changes.
Updated Table 7
and Description.
DS6099 - Rev 11 page 12/13
2N5153HR
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DS6099 - Rev 11 page 13/13
