STGW40H120DF2,
STGWA40H120DF2
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datasheet - production data
Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
VCE(sat) = 2.1 V (typ.) @ IC = 40 A
5 μs minimum short circuit withstand time at
TJ=150 °C
Safe paralleling
Very fast recovery antiparallel diode
Low thermal resistance
Applications
Figure 1: Internal schematic diagram
Uninterruptible power supply
Welding machines
Photovoltaic inverters
Power factor correction
High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.
Table 1: Device summary
Order code
Marking
Package
Packaging
STGW40H120DF2
G40H120DF2
TO-247
Tube
STGWA40H120DF2
G40H120DF2
TO-247 long leads
Tube
June 2016
DocID023753 Rev 5
This is information on a product in full production.
1/17
www.st.com
Contents
STGW40H120DF2, STGWA40H120DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 11
4
Package information ..................................................................... 12
5
2/17
4.1
TO-247 package information ........................................................... 12
4.2
TO-247 long leads package information ......................................... 14
Revision history ............................................................................ 16
DocID023753 Rev 5
STGW40H120DF2, STGWA40H120DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1200
V
IC
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
40
A
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
VGE
Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01)
±30
V
IF
Continuous forward current at TC = 25 °C
80
A
IF
A
Continuous forward current at TC = 100 °C
40
IFP(1)
Pulsed forward current
160
A
PTOT
Total dissipation at TC = 25 °C
468
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
TJ
Notes:
(1)Pulse
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.32
°C/W
RthJC
Thermal resistance junction-case diode
1.3
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID023753 Rev 5
3/17
Electrical characteristics
2
STGW40H120DF2, STGWA40H120DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
V(BR)CES
Collector-emitter breakdown
voltage
VCE(sat)
VF
Test conditions
Collector-emitter saturation
voltage
Forward on-voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
1200
2.1
VGE = 15 V, IC = 40 A,
TJ = 125 °C
2.4
VGE = 15 V, IC = 40 A,
TJ = 175 °C
2.5
IF = 40 A
3.9
IF = 40 A, TJ = 125 °C
3.05
IF = 40 A, TJ = 175 °C
2.8
Gate threshold voltage
VCE = VGE, IC = 2 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 40 A
VGE(th)
Max.
6
2.6
V
4.9
V
7
V
VGE = 0 V, VCE = 1200 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 5: Dynamic characteristics
Symbol
4/17
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Test conditions
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 960 V, IC = 40 A,
VGE = 15 V (see Figure 30: "
Gate charge test circuit")
DocID023753 Rev 5
Min.
Typ.
Max.
-
3200
-
-
220
-
-
80
-
-
158
-
-
17
-
-
85
-
pF
nC
STGW40H120DF2, STGWA40H120DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Typ.
Max.
Unit
Turn-on delay time
18
-
ns
Current rise time
37
-
ns
1755
-
A/µs
152
-
ns
83
-
ns
1
-
mJ
Turn-on current slope
Turn-off-delay time
Current fall time
Min.
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG = 10 Ω
(see Figure 31: " Switching
waveform")
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
1.32
-
mJ
Total switching energy
2.32
-
mJ
Turn-on delay time
36
-
ns
Current rise time
20
-
ns
1580
-
A/µs
161
-
ns
190
-
ns
1.81
-
mJ
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG = 10 Ω
TJ = 175 °C
(see Figure 31: " Switching
waveform" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
2.46
-
mJ
Ets
Total switching energy
4.27
-
mJ
tsc
Short-circuit withstand time
-
µs
Max.
Unit
Eoff
VCC = 600 V, VGE = 15 V,
TJstart = 150 °C
5
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
-
488
ns
-
2.59
µC
-
11.6
A
-
406
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
0.38
mJ
trr
Reverse recovery time
-
484
ns
Qrr
Reverse recovery charge
-
4.5
µC
Irrm
Reverse recovery current
-
18.6
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
170
A/µs
Err
Reverse recovery energy
-
0.94
mJ
IF = 40 A, VR = 600 V,
VGE = 15 V
(see Figure 31: " Switching
waveform") di/dt = 500 A/µs
IF = 40 A, VR = 600 V,
VGE = 15 V TJ = 175 °C
(see Figure 31: " Switching
waveform") di/dt = 500 A/µs
DocID023753 Rev 5
5/17
Electrical characteristics
2.2
STGW40H120DF2, STGWA40H120DF2
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case
temperature
Figure 3: Collector current vs. case
temperature
GIPG130320141053FSR
Ptot
(W)
450
VGE ≥ 15V, TJ ≤ 175 °C
400
GIPG130320141109FSR
IC
(A)
80
VGE ≥ 15V, TJ ≤ 175 °C
70
350
60
300
50
250
40
200
30
150
100
20
50
10
0
0
25
50
0
0
75 100 125 150 175 TC(°C)
Figure 4: Output characteristics (TJ = 25 °C)
13V
VGE=15V
140
11V
100
100
9V
60
40
40
7V
1
2
3
4
5
VCE(V)
Figure 6: VCE(sat) vs. junction temperature
GIPG130320141146FSR
VCE(sat)
(V)
IC= 80A
VGE= 15V
3.4
VGE=15V
13V
11V
80
60
0
0
TC(°C)
GIPG130320141127FSR
140
120
20
150
IC
(A)
120
80
100
Figure 5: Output characteristics (TJ = 175 °C)
GIPG130320141114FSR
IC
(A)
50
9V
20
7V
0
0
1
2
3
4
5
VCE(V)
Figure 7: VCE(sat) vs. collector current
GIPG190320151413 RV
VCE(sat)
(V)
VGE= 15V
5.0
TJ= 175°C
4.2
3.0
TJ= 25°C
IC= 40A
2.6
2.2
IC= 20A
3.4
2.6
TJ= - 40°C
1.8
1.8
1.4
-50
6/17
0
50
100
150
TJ(°C)
DocID023753 Rev 5
1.0
0
30
60
90
120
150
IC(A)
STGW40H120DF2, STGWA40H120DF2
Electrical characteristics
Figure 8: Collector current vs. switching
frequency
Figure 9: Forward bias safe operating area
GIPG130320141328FSR
Ic [A]
GIPG130320141339FSR
IC
(A)
120
100
100
1 µs
Tc=80° C
10 µs
80
Tc=100 °C
10
100 µs
60
40
20
rectangular current shape,
(duty cycle=0.5, VCC = 600V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
0
1
0.1
f [kHz]
10
1
10
100
1000
VCE(V)
Figure 11: Diode VF vs. forward current
Figure 10: Transfer characteristics
GIPG130320141348FSR
IC
(A)
140
1 ms
Single pulse
Tc= 25°C, TJ<= 175°C
VGE= 15V
1
VCE=10V
120
TJ=25°C
100
80
TJ=175°C
60
40
20
0
5
11 VGE(V)
9
7
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
GIPG130320141400FSR
VGE(th)
(norm)
IC= 2mA
VCE= VGE
1.1
GIPG130320141405FSR
V(BR)CES
(norm)
1.06
IC= 2mA
1.0
1.02
0.9
0.98
0.8
0.94
0.7
0.6
-50
0
50
100
150
TJ(°C)
DocID023753 Rev 5
0.9
-50
0
50
100
150
TJ(°C)
7/17
Electrical characteristics
STGW40H120DF2, STGWA40H120DF2
Figure 15: Gate charge vs. gate-emitter
voltage
Figure 14: Capacitance variations
VGE
(V)
GIPG190320151507 RV
C
(pF)
Cies
GIPG200320151700 RV
VCC
15
f=1 MHz,VGE=0V
12
1000
IC
40A
IG
1mA
9
Coes
6
Cres
3
100
10
0.1
0
1
10
100
0
VCE(V)
Figure 16: Switching energy vs. collector
current
E
(µJ)
5000
30
60
90
120
150
Qg(nC)
Figure 17: Switching energy vs. gate
resistance
GIPG130320141432FSR
GIPG130320141439FSR
E
(µJ)
4000
VCC = 600V, VGE = 15V,
RG = 10Ω, TJ = 175°C
EOFF
3500
4000
EON
3000
EOFF
2500
3000
EON
2000
2000
1500
VCC = 600 V, VGE = 15 V,
IC = 40 A, TJ = 175 °C
1000
1000
500
0
0
20
40
60
80
Figure 18: Switching energy vs. temperature
E
(µJ)
2500
0
0
IC(A)
10
20
30
40
RG(Ω)
Figure 19: Switching energy vs. collector
emitter voltage
GIPG130320141450FSR
VCC= 600V, VGE= 15V,
RG= 10Ω, IC= 40A
E
(µJ)
3200
GIPG130320141459FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 40A
2300
2100
EOFF
2600
EOFF
1900
2000
1700
EON
1400
1500
EON
1300
800
1100
900
0
8/17
50
100
150
TJ(°C)
DocID023753 Rev 5
200
200
400
600
800
VCE(V)
STGW40H120DF2, STGWA40H120DF2
Electrical characteristics
Figure 20: Short-circuit time and current vs.
VGE
Figure 21: Switching times vs. collector
current
GIPG190320151623 RV
tsc30
(µs)
t
(ns)
Isc
(A)
tSC
ISC
VCC ≤ 600 V
TJ ≤ 150 °C
26
22
320
GIPG140320141159FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 600V
tf
tdoff
100
260
tdon
18
200
14
140
10
10
10
11
13
12
80
VGE(V)
14
Figure 22: Switching times vs. gate
resistance
t
(ns)
1
0
20
40
Irm
(A)
tdoff
30
tf
GIPG140320141215FSR
IF = 40A, VCC = 600V,
VGE = 15V
25
100
TJ =175°C
20
tdon
15
tr
10
80 IC(A)
60
Figure 23: Reverse recovery current vs. diode
current slope
GIPG140320141205FSR
TJ= 175°C, VGE= 15V,
IC= 40A, VCC= 600V
tr
10
5
1
0
10
20
30
40
0
0
RG(Ω)
Figure 24: Reverse recovery time vs. diode
current slope
IF = 40A, VCC = 600V,
VGE = 15V
1400
800
1200 1600
di/dt(A/µs)
Figure 25: Reverse recovery charge vs. diode
current slope
GIPG140320141222FSR
trr
(ns)
400
1200
Qrr
(nC)
6000
GIPG140320141238FSR
IF = 40A, VCC = 600V,
VGE = 15V
5500
1000
5000
800
4500
600
TJ =175°C
400
3500
200
0
0
TJ =175°C
4000
400
800
1200 1600
di/dt(A/µs)
DocID023753 Rev 5
3000
0
400
800
1200 1600
di/dt(A/µs)
9/17
Electrical characteristics
STGW40H120DF2, STGWA40H120DF2
Figure 26: Reverse recovery energy vs. diode current slope
GIPG140320141247FSR
Err
(µJ)
IF = 40A, VCC = 600V,
VGE = 15V
1400
1200
1000
800
TJ =175°C
600
400
0
400
800
1200 1600
di/dt(A/µs)
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
10/17
DocID023753 Rev 5
STGW40H120DF2, STGWA40H120DF2
3
Test circuits
Test circuits
Figure 29: Test circuit for inductive load
switching
Figure 30: Gate charge test circuit
VCC
C
A
A
12 V
L=100 µH
G
E
B
G
RG
1 kΩ
100 nF
B
3.3
µF
C
+
47 kΩ
VCC
1000
µF
Vi ≤ VGMAX
D.U.T
2200
µF
E
-
IG=CONST
100 Ω
D.U.T.
2.7 kΩ
VG
47 kΩ
PW
AM01504v 1
Figure 31: Switching waveform
DocID023753 Rev 5
1 kΩ
AM01505v1
Figure 32: Diode reverse recovery waveform
11/17
Package information
4
STGW40H120DF2, STGWA40H120DF2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-247 package information
Figure 33: TO-247 package outline
12/17
DocID023753 Rev 5
STGW40H120DF2, STGWA40H120DF2
Package information
Table 8: TO-247 package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID023753 Rev 5
3.65
5.50
5.50
5.70
13/17
Package information
4.2
STGW40H120DF2, STGWA40H120DF2
TO-247 long leads package information
Figure 34: TO-247 long lead package outline
14/17
DocID023753 Rev 5
STGW40H120DF2, STGWA40H120DF2
Package information
Table 9: TO-247 long lead package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
P
3.50
3.60
Q
5.60
S
6.05
L1
4.30
DocID023753 Rev 5
3.70
6.00
6.15
6.25
15/17
Revision history
5
STGW40H120DF2, STGWA40H120DF2
Revision history
Table 10: Document revision history
Date
Revision
03-Oct-2012
1
First release.
2
Updated features in cover page.
Updated Table 4: Static characteristics, Table 5: Dynamic
characteristics and Table 7: Diode switching characteristics (inductive
load).
Minor text changes.
3
Updated title and description in cover page.
Updated Table 4: Static characteristics, Table 5: Dynamic
characteristics and Table 7: Diode switching characteristics (inductive
load).
Added Section 2.1: Electrical characteristics (curves).
4
Added device in TO-247 long leads.
Updated 4: Package information.
Updated Figure 7, Figure 11, Figure 14, Figure 15, Figure 20, Figure 21
and added Figure 26.
Minor text changes.
5
Modified: Table 2: "Absolute maximum ratings", Section 2: "Electrical
characteristics", Table 6: "IGBT switching characteristics (inductive
load)"
Minor text changes.
29-Jan-2014
24-Mar-2014
31-Mar-2015
28-Jun-2016
16/17
Changes
DocID023753 Rev 5
STGW40H120DF2, STGWA40H120DF2
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