STPSC10H12G2-TR
Datasheet
1200 V, 10 A, silicon carbide power Schottky diode
A1
K
K
A
NC
D²PAK HV
A
Product label
Product status link
STPSC10H12G2-TR
Product summary
I
F(AV)
V
RRM
10 A
1200 V
T j
(max.)
V
F
(typ.)
175 °C
1.35 V
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating T j
from -40 °C to 175 °C
• Low V
F
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant
Applications
• On board charger (OBC)
• DC/DC
• PFC
Description
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D 2 PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
DS13404 - Rev 1 - August 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STPSC10H12G2-TR
Characteristics
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
I
I
F(AV)
FRM
FSM
Repetitive peak reverse voltage (T j
Forward rms current
Average forward current δ = 0.5, square wave
Repetitive peak forward current
Parameter
= -40 °C to +175 °C)
Surge non repetitive forward current
T c
= 155 °C, DC current
T c
=155 °C, T j
= 175 °C, δ = 0.1
t p
= 10 ms sinusoidal, T c
= 25 °C t p
= 10 ms sinusoidal, T c
= 150 °C
T stg
T j
Storage temperature range
Operating junction temperature
(1)
1. (dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Value
1200
25
10
38
71
A
60
-65 to +175 °C
A
A
-40 to +175 °C
Unit
V
A
Symbol
R th(j-c)
Table 2. Thermal resistance parameters
Value
Parameter
Junction to case
Typ.
0.65
Max.
0.9
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Parameter
Reverse leakage current
Forward voltage drop
Table 3. Static electrical characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
I
V
F
R
= V
RRM
= 10 A
1. Pulse test: t p
= 5 ms, δ < 2%
2. Pulse test: t p
= 500 µs, δ < 2%
Min.
-
-
-
-
To evaluate the conduction losses, use the following equation:
• P = 1.03 x I
F(AV)
+ 0.122 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses:
•
•
AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses on a power diode
Typ.
5
30
1.35
1.75
Max.
60
400
1.50
2.25
Unit
µA
V
DS13404 - Rev 1 page 2/11
STPSC10H12G2-TR
Characteristics
Table 4. Dynamic electrical characteristics
Symbol
Q
Cj
C j
(1)
Parameter
Total capacitive charge
Total capacitance
Test conditions
V
R
= 800 V
V
R
= 0 V, T c
= 25 °C, F = 1 MHz
V
R
= 800 V, T c
= 25 °C, F = 1 MHz
1.
Most accurate value for the capacitive charge:
0
VR
Cj V dV
Min.
Typ.
Max.
Unit
57 nC
-
725
47
-
pF
DS13404 - Rev 1 page 3/11
STPSC10H12G2-TR
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Forward voltage drop versus forward current
(typical values)
20
IF(A)
Pulse test : t p
= 500 µs a
= -40 °C
15
T a
= 25 °C
10 a
= 150 °C
5
0
0.0
0.5
1.0
1.5
2.0
V
F
(V)
2.5
3.0
Figure 2. Reverse leakage current versus reverse voltage applied (typical values)
1.E+02
I
R
(µA)
1.E+01
1.E+00
1.E-01
T j = 150 °C
T j = 25 °C
1.E-02
V
R
(V)
1.E-03
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
Figure 3. Peak forward current versus case temperature
100
I
M
(A)
δ = 0.1
80
60
40
δ = 0.3
δ = 0.5
20
0
0
δ = 1
25
δ = 0.7
50 75
TC(°C)
100 125
T
δ = tp/T tp
150 175
Figure 4. Junction capacitance versus reverse voltage applied (typical values)
700
C j
(pF)
600
500
400
300
200
100
0
0.1
1.0
10.0
100.0
F = 1 MHz
Vosc= 30 mVRMS
Tj = 25 °C
1000.0
VR(V)
10000.0
Figure 5. Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c) / Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tp(s)
1.E+00
Figure 6. Non- repetitive peak surge forward current versus pulse duration (sinusoidal waveform)
1.E+03
I
FSM(A)
Ta = 25 °C
1.E+02
1.E+01
1.E-05
Ta = 150 °C
1.E-04 1.E-03 tp(s)
1.E-02
DS13404 - Rev 1 page 4/11
STPSC10H12G2-TR
Characteristics (curves)
Figure 7. Total capacitive charges versus reverse voltage applied (typical values)
60
Q
Cj(nC)
50
40
30
20
10
0
0 100 200 300 400 500 600
VR(V)
700 800
Figure 8. Thermal resistance junction to ambient versus copper surface under tab for D²PAK package (typical values)
80
R th(j-a)
(°C/W)
70
60
50
40
30
20
10
0
0 5
D²PAK
Epoxy printed board FR4, copper thickness = 35 µm
10 15 20 25 30
S
Cu
35
(cm²)
40
DS13404 - Rev 1 page 5/11
2
2.1
STPSC10H12G2-TR
Package information
Package information
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
D²PAK high voltage package information
Epoxy meets UL94, V0
Figure 9. D²PAK high voltage package outline
DS13404 - Rev 1 page 6/11
DS13404 - Rev 1
Ref.
F
F2
H
H1
J1
L
L1
A
A1
C
D e
E
M
R
V
L2
L3
L4
STPSC10H12G2-TR
D²PAK high voltage package information
4.93
6.85
1.5
2.6
0.20
0°
10.00
7.40
2.49
15.30
1.27
8.95
4.98
0.50
0.78
1.14
Min.
4.30
0.03
1.17
Table 5. D²PAK high voltage package mechanical data
Dimensions
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Figure 10. D²PAK high voltage footprint in mm
10,58
5.23
7.25
1.7
2.9
0.60
8°
10.40
7.80
2.69
15.80
1.40
9.35
5.18
0.90
0.85
1.70
Max.
4.70
0.20
1.37
5,10
7,46
15,95
3,40
1,20
5,08 page 7/11
STPSC10H12G2-TR
D²PAK high voltage package information
2.1.1
Note:
Creepage distance between Anode and Cathode
Symbol
Cd
A-K1
Cd
A-K2
Table 6. Creepage distance between anode and cathode
Parameter
Minimum creepage distance between A and K1 (with top coating)
Minimum creepage distance between A and K2 (without top coating)
D²PAK HV
Value Unit
5.38
3.48
mm
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1)
Figure 11. Creepage with top coating
Figure 12. Creepage without top coating
DS13404 - Rev 1 page 8/11
3
STPSC10H12G2-TR
Ordering information
Ordering information
Order code
STPSC10H12G2-TR
Table 7. Ordering information
Marking
SC10H12G2
Package
D 2 PAK HV
Weight
1.48 g
Base qty.
1000
Delivery mode
Tape and reel
DS13404 - Rev 1 page 9/11
Revision history
Date
31-Aug-2020
Revision
1
Table 8. Document revision history
Changes
First issue.
STPSC10H12G2-TR
DS13404 - Rev 1 page 10/11
STPSC10H12G2-TR
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DS13404 - Rev 1 page 11/11
