STMicroelectronics BUL416T Datasheet
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BUL416T
High voltage fast-switching NPN power transistor
Features
■
■
■
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
■
■
Electronic ballast for fluorescent lighting
Switch mode power supplies
Description
The BUL416T is an high voltage fast-switching
NPN power transistor manufactured in planar technology with diffused collector. This device is designed for lighting and SMPS applications where high voltage capability is needed coupled with high switching speed.
TO-220
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code Marking
BUL416T BUL416T
January 2011
Package
TO-220
Doc ID 16097 Rev 2
Packaging
Tube
1/9 www.st.com
9
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
STG
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T c
≤
25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
R thJC
R thJA
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
BUL416T
Value
1600
800
9
5
8
6
9
110
- 65 to 150
150
Unit
A
A
A
A
W
V
V
V
°C
°C
Value
1.14
62.5
Unit
°C/W
°C/W
2/9 Doc ID 16097 Rev 2
BUL416T Electrical characteristics
T case
= 25 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 1600 V
V
CE
= 1600 V T c
= 125 °C
I
V
CEO
V
CEO(sus)
(1)
EBO
Collector cut-off current
(I
B
= 0)
Collector-emitter sustaining voltage (I
B
= 0)
I
C
=100 mA
Emitter-base voltage
(I
C
= 0)
I
V
CE
E
= 800 V
= 10 mA
V
V
CE(sat)
(1)
BE(sat)
(1)
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
= 2 A _ I
B
= 0.4 A
I
C
= 4 A __ I
B
= 1.33 A
I
C
= 2 A _ _ I
B
= 0.4 A
I
C
= 4 A _ I
B
= 1.33 A h
FE
(1)
DC current gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.7 A V
CE
= 5 V t s t f
Inductive load
Storage time
Fall time
I
C
= 3 A I
B1
= 1 A
V
V
BE(off)
CL
= - 5 V R
BB
= 0
= 200 V L = 200 µH
1.
Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %.
Min.
Typ.
Max.
Unit
100
500
µA
µA
800
9
10
18
1.8
800
250
1.2
1.5
1.2
1.5
32
µA
V
V
V
V
V
V
µs ns
Doc ID 16097 Rev 2 3/9
Electrical characteristics
Figure 2.
Inductive load switching test circuit
BUL416T
1.
Fast electronic switch
2.
Non-inductive resistor
3.
Fast recovery rectifier
4/9 Doc ID 16097 Rev 2
BUL416T
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Doc ID 16097 Rev 2 5/9
Package mechanical data e1
F
H1
J1
L
L1
D
D1
E e
A b b1 c
Table 5.
Dim.
TO-220 type A mechanical data
Min.
4.40
0.61
1.14
0.48
15.25
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm.
Typ.
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
BUL416T
6/9 Doc ID 16097 Rev 2
BUL416T
Figure 3.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Doc ID 16097 Rev 2 7/9
Revision history BUL416T
Table 6.
Date
Document revision history
06-Aug-2009
25-Jan-2010
Revision
1
2
Changes
Initial release.
Document status promoted from preliminary data to datasheet.
8/9 Doc ID 16097 Rev 2
BUL416T
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