ST13005
High voltage fast-switching NPN power transistor
Datasheet
−
production data
Features
■
■
■
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
■
■
Electronic ballast for fluorescent lighting
Switch mode power supplies
Description
This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
TO-220
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code Marking
(1)
Package Packaging
ST13005
13005 A
13005 C
13005 D
13005 E
13005 F
TO-220 Tube
1.
Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
May 2012
This is information on a product in full production.
Doc ID 5262 Rev 10 1/12 www.st.com
12
3
4
1
2
Contents
Contents
ST13005
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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ST13005
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
STG
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T c
≤
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
R thj-case
R thj-amb
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-amb max
Electrical ratings
Value
700
400
9
4
8
2
4
75
- 65 to 150
150
Unit
A
A
W
°C
°C
V
A
A
V
V
Value
1.7
62.5
Unit
°C/W
°C/W
Doc ID 5262 Rev 10 3/12
Electrical characteristics ST13005
T case
= 25 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions Min.
Typ.
Max.
Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V T
C
=125 °C
1
5 mA mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 9 V 1 mA
V
CEO(sus)
(1)
Collector-emitter sustaining voltage (I
B
= 0)
I
C
=10 mA
V
V
CE(sat)
(1)
BE(sat)
(1)
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
= 1 A _ I
B
= 0.2 A
I
C
= 2 A I
B
= 0.5 A
I
C
= 4 A __ I
B
= 1 A
I
C
= 1 A _ _ I
B
= 0.2 A
I
C
= 2 A _ I
B
= 0.5 A
400
0.5
0.6
1
1.2
1.6
V
V
V h
FE
(1)(2)
DC current gain
I
C
= 1 A V
CE
= 5 V
Group A
Group C
Group D
Group E
Group F
I
C
= 2 A V
CE
= 5 V
15
16
21
26
31
8
32
22
27
32
37
40 t s t f
Resistive load
Storage time
Fall time t
I
C
= 2 A V
CC
= 125 A
I
B1 p
= - I
B2
= 30 µs
1.
Pulse test: pulse duration = 300 µs, duty cycle
≤
=0.4 A 1.5
0.2
3
2.
Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details
µs
µs
V
V
V
4/12 Doc ID 5262 Rev 10
ST13005 Electrical characteristics
Figure 2.
Safe operating area Figure 3.
Derating curve
Figure 4.
DC current gain (V
CE
= 1.5 V) Figure 5.
DC current gain (V
CE
= 5 V)
Figure 6.
Collector-emitter saturation voltage
Figure 7.
Base-emitter saturation voltage
Doc ID 5262 Rev 10 5/12
Electrical characteristics
Figure 8.
Inductive load fall time
ST13005
Figure 9.
Inductive load storage time
Figure 10.
Resistive load fall time Figure 11.
Resistive load storage time
Figure 12.
Reverse biased safe operating area
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ST13005
Figure 13.
Inductive load switching test circuit
Electrical characteristics
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
Figure 14.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
Doc ID 5262 Rev 10 7/12
Package mechanical data
3 Package mechanical data
ST13005
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
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ST13005
Table 5.
Dim.
TO-220 type A mechanical data c
D
D1
E e
A b b1 e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Min.
4.40
0.61
1.14
0.48
15.25
3.75
2.65
mm.
Typ.
1.27
16.40
28.90
Package mechanical data
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
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Package mechanical data
Figure 15.
TO-220 type A drawing
ST13005
00159 88 _typeA_Rev_ S
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ST13005 Revision history
Table 6.
Date
21-Jun-2004
22-Aug-2007
12-Oct-2007
Document revision history
Revision
15-Feb-2012
15-May-2012
6
7
8
9
10
Changes
Updated mechanical data according to PCN APM-PWR/07/2804
Updated marking in
Table 1
– Updated marking in Table 1
– Inserted: Table 3
– Modified: h
FE
in Table 4
– Updated mechanical data
Updated marking in
Table 1 and
4
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ST13005
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