A2
G
A1
G
A1
A2
TO-220FPAB
(T635T-8FP)
Symbol
Table 1. Device summary
Value Unit
I
T(rms)
V
DRM
, V
RRM
V
DSM
, V
RSM
I
GT
6
800
900
35
A
V
V mA
T635T-8FP
6 A Snubberless™ Triac
Datasheet
−
production data
Features
• Medium current Triac
• High static and dynamic commutation
• Three quadrants
• ECOPACK
®
2 compliant component
• Complies with UL standards (File ref: E81734)
Applications
•
General purpose AC line load switching
• Motor control circuits
•
Small home appliances
•
Lighting
• Inrush current limiting circuits
•
Overvoltage crowbar protection
Description
Available in through-hole full pack package, the
T635T-8FP Triac can be used for the on/off or phase angle control function in general purpose
AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected.
Provides UL certified insulation rated at 2 kV.
TM: Snubberless is a trademark of STMicroelectronics
January 2015
This is information on a product in full production.
DocID024247 Rev 2 1/9 www.st.com
9
Characteristics
1 Characteristics
T635T-8FP
Table 2. Absolute maximum ratings (T j
= 25 °C unless otherwise stated)
Symbol Parameter Value Unit
I
T(rms)
A
I
TSM
I
² t
V
DRM
,
V
RRM
V
DSM
,
V
RSM
On-state rms current (full sine wave) T c
= 117 °C
F = 50 Hz t = 20 ms
Non repetitive surge peak on-state current (full cycle, T j
initial = 25 °C)
F = 60 Hz t = 16.7 ms
I
² t value for fusing, T j
initial = 25 °C t p
= 10 ms
Repetitive surge peak off-state voltage
T j
= 150 °C
T j
= 125 °C
Non repetitive surge peak off-state voltage t p
= 10 ms
6
45
47
13
600
800
900
A
A
² s
V
V dI/dt
I
GM
P
G(AV)
T stg
T j
T
L
V ins
Critical rate of rise of on-state current I
G
= 2 x I
GT
, t r
≤
100 ns
F = 100 Hz
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range t p
= 20 µs T j
= 150 °C
T j
= 150 °C
Maximum lead temperature for soldering during 10 s
Insulation rms voltage, 1 minute
100
4
1
- 40 to + 150
- 40 to + 150
260
2
A/µs
A
W
°C
°C kV
Table 3. Electrical characteristics (T j
= 25 °C, unless otherwise stated)
Symbol Test conditions Quadrant Value Unit
I
GT
(1)
V
GT
V
GD
I
H
(1)
I
L dV/dt
(1)
V
D
= 12 V, R
L
= 30
Ω
V
D
= 12 V, R
L
= 30
Ω
V
D
= V
DRM
, R
L
= 3.3 k
Ω
, T j
= 150 °C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 536 V, gate open
V
D
= 402 V, gate open
(dI/dt)c
(1)
Without snubber (dV/dt)c
≥
20 V/µs)
I - II - III
I - II - III
I - II - III
I - III
II
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
1.75
35
1.3
0.2
40
60
65
2000
1000
6
3 mA
V
V mA mA mA
V/µs
V/µs
A/ms
1. For both polarities of A2 referenced to A1
2/9 DocID024247 Rev 2
T635T-8FP Characteristics
Symbol
V
T
(1)
V t0
(1)
R d
(1)
I
TM
= 8.5 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
Table 4. Static characteristics
Test conditions
I
DRM
I
RRM
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
1. For both polarities of A2 referenced to A1
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 125 °C
T j
= 150 °C
Symbol
R th(j-c)
R th(j-a)
Junction to case (AC)
Junction to ambient
Table 5. Thermal resistance
Parameter
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.85
75
5
0.6
2.0
Value
4.5
60
Unit
V
V m
Ω
µA mA
Unit
°C/W
°C/W
1.5
1.0
0.5
0.0
0
Figure 1. Maximum power dissipation versus on-state rms current (full cycle)
8
P(W)
6
4
2
α
=180
180°
5
4
3
2
1
0
0
Figure 2. On-state rms current versus case temperature (full cycle)
7
I
T(RMS)
(A)
α
=180°
6
25 50 75 100 125 150
0
0 1 2
I
T(RMS)
(A)
3 4 5 6
Figure 3. On-state rms current versus ambient temperature (free air convection)
3.0
I
T(RMS)
(A)
α
= 180°
2.5
Figure 4. Relative variation of thermal impedance versus pulse duration
1.0E+00
K = [Zth / Rth]
Z th(j-c)
Z th(j-a)
2.0
1.0E-01
25 50 75 100 125 150
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tp (s)
1.0E+02 1.0E+03
DocID024247 Rev 2 3/9
Characteristics T635T-8FP
Figure 5. On-state characteristics (maximum values)
100
I
TM
(A)
10
T j
= 150 °C
T j max :
V to
R d
= 0.85 V
= 75 m
W
T j
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
TM
(V)
3.5
4.0
Figure 7. Non repetitive surge peak on-state current and corresponding values of I
2 t
Figure 6. Surge peak on-state current versus number of cycles
50
I
TSM
(A)
45
40
35
30
25
20
15
10
5
0
1
Repetitive
T
C
= 117 °C
Non repetitive
T j initial=25 °C
10 t = 20 ms
One cycle
100
Number of cycles
1000
1000
I
TSM(
A), I²t (A²s) dI/dt limitation: 100 A/µs
I
TSM
T j initial=25 °C
2.0
Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)
I
GT
Q1-Q2
I
GT
Q3
1.5
100 1.0
V
GT
0.5
10
0.01
Sinusoidal pulse with
0.10
I²t
0.0
-50 -25 0 25 50 75 100 125 150
1.00
10.00
Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values)
Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)
5 dV/dt [T j
] / dV/dt [T j
=150 °C]
(dV/dt) > 5KV/µs
4
V
D
=V
R
=402V
2.0
1.5
I
L
3
I
H
1.0
2
0.5
1
0
25 50 75 100 125
T j
(°C)
150
0.0
-50 -25 0 25 50 75 100 125 150
4/9 DocID024247 Rev 2
T635T-8FP Characteristics
Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values)
5
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
4
3
2
1
0
0.1
1.0
10.0
T j
=150 °C
(dV/dt)c (V/µs)
100.0
Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values)
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)
1.0E+00
I , I @ [T ; V
DRM
, V
RRM
] / I , I T
*
V
DRM
=V
RRM
=800 V
1.0E-01
V
DRM
=V
RRM
=600 V
1.0E-02
1.0E-03
1.0E-04
25 50
V
DRM
=V
RRM
=400 V
*
IDRM, IRRM @:
[Tjmax = 125 °C; 800 V]
[Tjmax = 150 °C; 600 V]
75 100 125 150
DocID024247 Rev 2 5/9
Package information T635T-8FP
•
Epoxy meets UL94, V0
•
Lead-free package
• Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Figure 14. TO-220FPAB dimension definitions
H
L6
Dia
L3
L2
L4
G1
G
F
F1
F2
L5
D
B
A
E
L7
6/9 DocID024247 Rev 2
T635T-8FP
Ref.
H
L2
L3
L4
L5
L6
L7
Dia.
E
F
F1
A
B
D
F2
G
G1
Package information
28.6
9.8
2.9
15.9
9.00
3.00
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
Table 6. TO-220FPAB dimensions
Dimensions
Millimeters
Max.
4.6
2.7
2.75
0.70
1
1.70
1.70
5.20
2.7
10.4
Min.
0.173
0.098
0.098
0.018
0.030
0.045
0.045
0.195
0.094
0.393
16 Typ.
30.6
10.6
3.6
16.4
9.30
3.20
1.126
0.386
0.114
0.626
0.354
0.118
Inches
0.63 Typ.
1.205
0.417
0.142
0.646
0.366
0.126
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.205
0.106
0.409
DocID024247 Rev 2 7/9
Ordering information T635T-8FP
Figure 15. Ordering information scheme
Triac
Current
6 = 6 A
Gate sensitivity
35 = 35 mA
Specific application
T = Increased (dI/dt)c and dV/dt producing reduced I
TSM
Voltage (V
DRM
, V
RRM
)
8 = 800 V
Package
FP = TO-220FPAB
T 6 35 T - 8 FP
Order code
T635T-8FP
Marking
Table 7. Ordering information
Package Weight Base qty
T635T-8FP TO-220FPAB 2.0 g 50
Delivery mode
Tube
Date
05-Mar-2013
14-Jan-2015
Revision
Table 8. Document revision history
Changes
1
2
Initial release.
Updated
Features ,
Table 2
and
Table 5 .
8/9 DocID024247 Rev 2
T635T-8FP
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© 2015 STMicroelectronics – All rights reserved
DocID024247 Rev 2 9/9
