TN5015H-6G
High temperature 50 A SCRs
Datasheet - production data
G
A
K
A
K
G
D²PAK
A
Features
High junction temperature: T j
= 150 °C
High noise immunity dV/dt = 500 V/µs up to
150 °C
Gate triggering current I
GT
Peak off-state voltage V
High turn-on current rise dI/dt = 100 A/µs
ECOPACK ®
= 15 mA
DRM
/V
RRM
= 600 V
2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Solid state relays
Description
Thanks to its junction temperature T j
up to
150 °C, the device offers high thermal performance operation up to 50 A. Its D²PAK package allows modern SMD designs as well as compact back to back configuration.
Its tradeoff noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (I
GT
= 15 mA) and its turnon current rise (dI/dt = 100 A/μs) allow to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, inrush current limiting circuits.
Order code
Table 1: Device summary
Package V
DRM
/V
RRM
I
GT
TN5015H-6G D²PAK 600 V 15 mA
June 2017 DocID030697 Rev 1
This is information on a product in full production.
1/9 www.st.com
Characteristics
1 Characteristics
TN5015H-6G
Table 2: Absolute maximum ratings (limiting values), T j
= 25 °C unless otherwise specified
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
RMS on-state current
(180 ° conduction angle)
Average on-state current
(180 ° conduction angle)
Non repetitive surge peak on-state current
I 2 t I 2 t value for fusing dl/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
V
DRM
/V
RRM
Repetitive peak off-state voltage
T c
= 120 °C
T c
= 122 °C
T c
= 128 °C
T c
= 134 °C t p
= 8.3 ms t p
= 10 ms t p
= 10 ms f = 60 Hz
T j
= 150 °C
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage t p
= 10 ms
I
GM
P
G(AV)
V
RGM
T stg
T j
Peak gate current
Average gate power dissipation t p
= 20 µs T j
= 150 °C
T j
= 150 °C
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
50
30
25
20
493
450
1012
100
600
V
DRM
/V
RRM
+
100
4
1
5
-40 to +150
-40 to +150
A
A
A
A 2 s
A/µs
V
V
A
W
V
°C
°C
Symbol
Table 3: Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test conditions Value Unit
I
GT
V
GT
V
GD
I
H
I
L dV/dt t gt t q
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
T j
= 150 °C
Max.
Max.
Min.
Max.
I
G
= 1.2 x I
GT
V
D
= 402 V, gate open T j
= 150 °C
Max.
Min.
I
TM
= 100 A, V
D
= 600 V, I
G
= 100 mA, (dI
G
/dt) max = 0.2 A/µs Typ.
I
TM
= 100 A, V
D
= 402 V,
(d
I
/dt)off = 30 A/µs, V
R
= 25 V, dV
D
/dt = 50 V/µs
T j
= 150 °C Typ.
15
1.3
0.15
60 mA
V
V mA
80 mA
500 V/µs
1.9 µs
85 µs
2/9 DocID030697 Rev 1
TN5015H-6G
I
Symbol
V
V
DRM
R
TM
TO
D
, I
RRM
V
D
= V
DRM
= V
RRM lTable 4: Static characteristics
Test conditions
I
TM
= 100 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
T
T
T j j j
= 25 °C
= 150 °C
= 150 °C
T j
= 25 °C
T j
= 150 °C
Symbol
R th(j-c)
R th(j-a)
Table 5: Thermal parameters
Parameter
Junction to case (DC)
Junction to ambient (DC)
S (1) = 1 cm²
Notes:
(1)
S = Copper surface under tab
Max.
Max.
Max.
Max.
Characteristics
Value
1.65
0.85
9
10
6
Unit
V mΩ
µA mA
Max.
Typ.
Value
0.6
45
Unit
°C/W
DocID030697 Rev 1 3/9
Characteristics
1.1 Characteristics (curves)
Figure 1: Maximum average power dissipation versus average on-state current
TN5015H-6G
50
P(W)
40
α = 30 °
α = 60 °
α = 90 °
α = 120° α = 180° D.C
Figure 2: Average and DC on-state current versus case temperature
I
T(AV)
(A)
60
α = 30° α = 60° α = 90°
α = 120° α = 180° D.C
50
30
40
30
20
20
10
I
T(AV)
(A)
0
0 5 10 15 20 25 30 35 40 45 50
Figure 3: Average and D.C. on state current versus ambient temperature
I
T(AV)
(A)
3.0
10
0
0 25 50 75 100
T
C
(°C)
125 150
Figure 4: Relative variation of thermal impedance versus pulse duration
K=[Z th
/R th
]
1.0E+00
Z th(j-c)
2.5
D.C
Z th(j-a)
2.0
α = 180 °
1.0E-01
1.5
1.0
1.0E-02
0.5
T
A
(°C)
0.0
0 25 50 75 100 125 150
Figure 5: Relative variation of gate trigger current and gate voltage versus junction temperature
(typical values)
I
GT
,V
GT
[T j
] / I
GT
,V
GT
[T j
=25 °C]
2.5
2.0
1.5
1.0
0.5
0.0
-50
V
GT
I
GT
-25 0 25 50 75
T j
(°C)
100 125 tp(s)
1.0E-03
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
150
Figure 6: Relative variation of holding and latching current versus junction temperature
(typical values)
I
H
, I
L
[T j
]/ I
H
, I
L
[T j
=25 °C]
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50
I
L
-25
I
H
0 25 50 75 100
T j
(°C)
125 150
4/9 DocID030697 Rev 1
TN5015H-6G
Figure 7: Relative variation of static dV/dt immunity versus junction temperature
(typical values)
12 d V /d t [ T j
] / d V /d t [ T j
= 150 °C ]
11
V
D
= 402 V
10
9
6
5
4
8
7
3
2
1
0
90
Above test equipment capability
95 100 105 110 115 120 125 130 135 140 145 150
Tj(°C)
Characteristics
500
Figure 8: Surge peak on-state current versus number of cycles
I
TSM
(A)
400
300
200
100
0
1
Repetitive
T c
= 120 °C
T j
Non repetitive initial = 25 °C
10 100
Number of cycles
1000
Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width t p
< 10 ms
Figure 10: On-state characteristics
(maximum values)
Figure 11: Relative variation of leakage current
1.0E+00
I
DRM versus junction temperature
, I
RRM
[Tj; V
DRM
, V
RRM
] / I
DRM
, I
RRM
[150 °C; 600 V]
V
DRM
= V
RRM
= 600 V
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25 50 75
Tj(°C)
100 125 150
60
50
40
30
20
10
0
0
Figure 12: Thermal resistance junction to ambient versus copper surface under tab
R th(j-a)
(°C/W)
80
70
5 10 15
Epoxy printed board FR4, eCU= 35 µm
S
Cu
(cm²)
20 25 30 35 40
DocID030697 Rev 1 5/9
Package information
2
2.1
Package information
TN5015H-6G
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Epoxy meets UL94, V0
Lead-free, halogen-free package
D²PAK package information
Figure 13: D²PAK package outline
6/9 DocID030697 Rev 1
TN5015H-6G
Ref.
Min.
Package information
Table 6: D²PAK package mechanical data
Dimensions
Millimeters
Inches (1)
Typ. Max. Min. Typ.
A
A1
A2
A3 b b2 c c2
4.30
2.49
0.03
0.25
4.60
2.69
0.23
0.93
1.7
0.60
1.36
0.1693
0.0980
0.0012
0.0276
0.0492
0.0177
0.0476
0.0098
0.70
1.25
0.45
1.21
D
D1
D2 e
8.95
7.50
1.30
2.54
9.35
8.00
1.70
0.3524
0.2953
0.0512
0.1
E
E1
E2
G
H
L
L2
L3
R
10.00
8.30
6.85
4.88
15
1.78
1.27
1.40
0.40
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0500
0.0551
0.0157
V2 0° 8° 0°
Notes:
(1)
Dimensions in inches are given for reference only
Figure 14: D²PAK recommended footprint (dimensions are in mm)
Max.
0.1811
0.1059
0.0091
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
8°
DocID030697 Rev 1 7/9
Ordering information
3 Ordering information
Figure 15: Ordering information scheme
TN5015H-6G
4
TN 50 15 H - 6 G - TR
Series
TN = SCR
Current
50 = 50 A
Gate sensitivity
15 = 15 m A
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
G = D ² PA K
Packing mode
Blank = tube
TR = Tape and reel
Order code
TN5015H-6G
TN5015H-6G-TR
Table 7: Ordering information
Marking Package Weight Base qty.
TN5015H6
TN5015H6
D²PAK
D²PAK
1.5 g
1.5 g
50
1000
Delivery mode
Tube
Tape and reel
Revision history
Date
Table 8: Document revision history
Revision
08-Jun-2017 1 Initial release.
Changes
8/9 DocID030697 Rev 1
TN5015H-6G
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