2STC4468
High power NPN epitaxial planar bipolar transistor
Features
■
■
■
■
High breakdown voltage V
CEO
= 140 V
Complementary to 2STA1695
Typical f t
= 20 MHz
Fully characterized at 125 °C
Application
■ Audio power amplifier
Description
This device is an NPN transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior.
Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages.
TO-3P
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
2STC4468
Marking
2STC4468
Package
TO-3P
Packaging
Tube
February 2012 Doc ID 13600 Rev 3 1/10 www.st.com
10
Electrical ratings
Table 2.
Symbol
I
CM
P tot
T stg
T
J
V
CBO
V
CEO
V
EBO
I
C
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Total dissipation at T c
= 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
R thj-case
R thj-amb
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
2STC4468
Value
200
140
6
10
20
100
-65 to 150
150
Unit
A
W
°C
°C
V
A
V
V
Value
1.25
35.7
Unit
°C/W
°C/W
2/10 Doc ID 13600 Rev 3
2STC4468 Electrical characteristics
(T case
= 25 °C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions
V
V
V
V
I
I
CBO
EBO
(BR)CEO
(1)
(BR)CBO
(BR)EBO
(1)
CE(sat)
(1)
V
BE
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-emitter saturation voltage
V
V
CB
EB
= 200 V
= 6 V
Collector-emitter breakdown voltage (I
B
= 0)
I
C
= 50 mA
Collector-base breakdown voltage (I
E
= 0)
I
C
= 100 µA
Emitter-base breakdown voltage (I
C
= 0)
I
E
= 1 mA
Base-emitter voltage
I
C
= 5 A I
B
= 500 mA
I
C
= 7 A I
B
= 700 mA
V
CE
= 5 V I
C
= 5 A h
FE f
T
DC current gain
Transition frequency
I
C
= 3 A V
CE
= 4 V
I
C
= 5 A V
CE
= 4 V
I
C
= 0.5 A V
CE
= 12 V
C
CBO
Collector-base capacitance (I
E
= 0)
Resistive Load
V
CB
= 10 V f = 1 MHz t on t stg t f
Turn-on time
Storage time
Fall time
1.
Pulse duration = 300 µs, duty cycle
≤
1.5 %
V
CC
= 60 V I
C
= 5 A
I
B1
= -I
B2
= 0.5 A
Min.
Typ.
Max.
Unit
140
200
6
70
50
20
150
0.22
4.3
0.5
0.1
0.1
0.5
0.7
1.3
140
µA
µA
V
V
V
V
V
V
MHz pF
µs
µs
µs
Doc ID 13600 Rev 3 3/10
Electrical characteristics 2STC4468
characteristics
Figure 2.
Safe operating area Figure 3.
Power derating versus temperature
0OWERDERATINGVERSUSTEMPERATURE
0
4/4
7
7ITHINFINITEHEATSINK
Figure 4.
Output characteristics
7ITHOUTHEATSINK
4
O
#
!-V
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage Figure 7.
Base-emitter voltage
4/10 Doc ID 13600 Rev 3
2STC4468
Figure 8.
Base-emitter voltage
Electrical characteristics
Figure 9.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
Doc ID 13600 Rev 3 5/10
Package mechanical data
3 Package mechanical data
2STC4468
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
6/10 Doc ID 13600 Rev 3
2STC4468 Package mechanical data
Table 5.
TO-3P mechanical data mm
Dim.
Min. Typ. Max
A 4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 b2 2.80
2.20
3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60 e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q 5
Q1 3.80
Doc ID 13600 Rev 3 7/10
Package mechanical data
Figure 10.
TO-3P package dimensions
2STC4468
8/10 Doc ID 13600 Rev 3
8045950_A
2STC4468 Revision history
Table 6.
Date
Document revision history
21-May-2007
07-Nov-2008
08-Feb-2012
Revision
1
2
3
Changes
Initial release
Document status promoted from preliminary data to datasheet.
–
Figure 3 inserted
– Mechanical data updated
Doc ID 13600 Rev 3 9/10
2STC4468
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10/10 Doc ID 13600 Rev 3
