STX826
Low voltage PNP transistor
Features
■ TO-92 package suitable for through-hole PCB assembly
Application
■
■
■
Voltage regulation
Relay driver
Generic switch
Description
The STX826 is a low voltage PNP transistor manufactured in planar technology with base island layout.
TO-92
Figure 1.
Internal schematic diagram
(C)
(2)
(B)
( 3 )
(E)
(1)
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Table 1.
Device summary
Order code Marking Package Packaging
STX826 X826 TO-92 Bag
April 2011 Doc ID 11747 Rev 3 1/9 www.st.com
9
Electrical ratings
Table 2.
Symbol
I
CM
I
B
I
BM
P tot
V
CBO
V
CEO
V
EBO
I
C
T stg
T
J
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T a
= 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
R thj-case
R thj-amb
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
STX826
Value
-6
-1
-2
0.9
-60
-30
-5
-3
-65 to 150
150
Unit
A
W
A
A
V
A
V
V
°C
°C
Value
44.6
139
Unit
°C/W
°C/W
Obsolete Product(s) - Obsolete Product(s)
2/9 Doc ID 11747 Rev 3
STX826 Electrical characteristics
(T case
= 25 °C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions Min.
Typ.
Max.
Unit
V
V
(BR)CEO
(1)
V
V
V
I
I
I
CES
CEO
EBO
(BR)CBO
(BR)EBO
CE(sat)
(1)
BE(sat)
(1)
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
V
V
CE
CE
= -60 V
= -30 V
Emitter cut-off current
(I
C
= 0)
V
EB
= -5 V
Collector-base breakdown voltage (I
E
= 0)
I
C
= -100 µA
Collector-emitter breakdown voltage (I
B
= 0)
I
C
= -10 mA
Emitter-base breakdown voltage (I
C
= 0)
I
E
= -100 µA
Collector-emitter saturation voltage
I
C
= -1 A I
B
= -50 mA
I
C
= -2 A I
B
= -100 mA
I
C
= -3 A I
B
= -150 mA
Base-emitter saturation voltage
I
C
= -2 A I
B
= -100 mA
-60
-30
-5 h
FE
DC current gain
I
C
= -100 mA V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
I
C
= -3 A V
CE
= -2 V f
T
Transition frequency
1.
Pulse duration = 300 µs, duty cycle
≤
1.5 %
V
CE
= -10 V I
C
= -0.1 A
100
80
30
100
-10
-100
-10
-0.4
-0.7
-1.1
-1.2
300
µA
µA
µA
V
V
V
V
V
V
V
MHz
Obsolete Product(s) - Obsolete Product(s)
Doc ID 11747 Rev 3 3/9
Electrical characteristics STX826
Figure 2.
DC current gain (V
CE
=2 V) Figure 3.
DC Current Gain (V
CE
=5 V)
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
Figure 6.
Resistive load switching time
(OFF)
Figure 7.
Resistive load switching time
(ON)
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4/9 Doc ID 11747 Rev 3
STX826
Figure 8.
Reverse biased safe operating area
Electrical characteristics
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Doc ID 11747 Rev 3 5/9
Electrical characteristics
Table 5.
TO-92 mechanical data
Dim.
e e1
L
R
D
E
A b
S1
W
V
Figure 9.
TO-92 drawings
Min.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
mm
Typ.
5°
Max.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
STX826
Obsolete Product(s) - Obsolete Product(s)
01027 8 2_Rev_D
6/9 Doc ID 11747 Rev 3
STX826
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
Doc ID 11747 Rev 3 7/9
Revision history
Table 6.
Date
18-Oct-2005
27-Apr-2011
Document revision history
Revision
2
3
Curves inserted
Changed: Figure 1
Changes
STX826
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8/9 Doc ID 11747 Rev 3
STX826
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