STTH200F04
Ultrafast high voltage rectifier
Datasheet - production data
A1
A2
A1
A2
K1
ISOTOP
K1
K2
K2
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
Insulated package ISOTOP:
Insulated voltage: 2500 V
RMS
Capacitance: 45 pF
sine
ECOPACK ® 2 compliant component
Description
This device, which uses ST 400 V technology, is especially suited for use in switching welding equipment.
Table 1: Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max.)
V
F
(typ.) t rr
(max.)
2 x 100 A
400 V
150 °C
0.95 V
70 ns
TM: ISOTOP is a trademark of
STMicroelectronics
December 2017 DocID031309 Rev 1
This is information on a product in full production.
1/10 www.st.com
Characteristics
1 Characteristics
Symbol
Symbol
R th(j-c)
R th(c)
Coupling
Table 2: Absolute ratings (limiting values, per diode)
Parameter
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
Forward rms current
I
F(AV)
Average forward current, δ = 0.5
I
FSM
T stg
T j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
T
C
= 60 °C, per diode t p
= 10 ms sinusoidal
Junction to case
Table 3: Thermal parameters
Parameter
Per diode
Total
STTH200F04
Value
400
200
100
1000 A
-55 to +150 °C
150 °C
Unit
V
A
A
Maximum values
0.60
0.35
0.1
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
Δ T j
(diode1) = P
(diode1) x R th(j-c) (per diode)
+ P
(diode2)
x R th(c)
Symbol
Table 4: Static electrical characteristics (per diode)
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
V
F
(2)
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
V
R
= V
RRM
I
F
= 100 A
I
F
= 200 A
-
-
-
-
-
-
Notes:
(1)
Pulse test: t p
= 5 ms, δ < 2%
(2)
Pulse test: t p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.85 x I
F(AV)
+ 0.003 x I
F
2
(RMS)
75
75
750
1.45
0.95 1.20
0.90 1.15
1.20 1.50
1.15 1.45
µA
V
2/10 DocID031309 Rev 1
STTH200F04
Symbol t rr
I
RM
Q
RR
S t fr
V
FP
Characteristics
Table 5: Dynamic characteristics (per diode)
Parameter Test conditions Min. Typ. Max. Unit
Reverse recovery time
T j
= 25 °C
T j
= 125 °C
I
F
= 0.5 A,
I rr
= 0.25 A,
I
R
= 1 A
I
F
= 1 A, dI
F
/dt = 50 A/μs,
V
R
= 30 V
I
F
= 100 A, dI
F
/dt = -
200 A/μs,
V
R
= 50 V
-
-
70
80
95
105 140 ns
Reverse recovery current
Reverse recovery charge
Softness factor
T j
= 125 °C
I
F
= 100 A, dI
F
/dt = -
200 A/μs,
V
R
= 400 A/μs
-
-
-
15
750
0.3
20 A nC
Forward recovery time T j
= 25 °C
Forward recovery voltage T j
= 25 °C
I
F
= 100 A, dI
F
/dt = 200 A/μs
V
FR
= 1.5 x V
Fmax
I
F
= 100 A, dI
F
/dt = 200 A/μs
- 500 800 ns
- 2.9 V
DocID031309 Rev 1 3/10
Characteristics
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average forward current (per diode)
180
P(W)
160
140
120
100
80
60
40
20
0
0
δ = 0.05
δ = 0.1
I
F(AV)
(A)
δ = 0.2
δ = 0.5
δ
= tp /T
T
δ = 1 tp
10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 3: Relative variation of thermal impedance junction to case versus pulse duration
Z th(j-c)
/ R t h(j-c)
1.0
Single pulse
ISOTOP
STTH200F04
Figure 2: Forward voltage drop versus forward current (per diode)
Figure 4: Peak reverse recovery current versus dI
F
/dt (typical values, per diode) t p
(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 6: Reverse recovery charges versus dI
F
/dt
(typical values, per diode)
4/10 DocID031309 Rev 1
STTH200F04
1.4
Figure 7: Relative variations of dynamic parameters versus junction temperature
Q
RR
; I
RM
[T j
] / Q
RR
; I
RM
[T j
=125°C]
I
F
= 100 A
V
R
= 400 V
1.2
Characteristics
Figure 8: Transient peak forward voltage versus dI
F
/dt (typical values, per diode)
6
V
FP
(V)
I
F
T j
= 100 A
= 125 °C
5
1.0
4
I
RM 0.8
3
0.6
Q
RR
2
0.4
1
0.2
T j
(°C)
0.0
25 50 75 100 125
Figure 9: Forward recovery time versus dI
F
/dt
(typical values, per diode)
150
0
0 50 100 150 200 250 300 350 400 dI
F
/dt(A/µs)
450 500
Figure 10: Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
1000
F = 1 MHz
V
OSC
T j
= 30 mV
RMS
= 25 °C
100
1 10 100
V
R
(V)
1000
DocID031309 Rev 1 5/10
Package information
2 Package information
STTH200F04
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 1.3 N·m
Maximum torque value: 1.5 N·m
STMicroelectronics strongly recommends the use of the screws delivered with this product.
The use of any other screws is entirely at the user's own risk and will invalidate the warranty.
6/10 DocID031309 Rev 1
STTH200F04
2.1 ISOTOP package information
Figure 11: ISOTOP package outline
Package information
DocID031309 Rev 1 7/10
Package information
Ref.
G2
F
F1
H
E1
E2
G
G1
A
A1
B
C
C2
D
D1
E
Diam P
P1
S
14.90
12.60
3.50
4.10
4.60
-0.05
4
4
30.10
Table 6: ISOTOP package mechanical data
Dimensions
Millimeters
Min.
11.80
8.90
7.80
0.75
1.95
37.80
31.50
25.15
23.85
Max.
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
Min.
0.460
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
24.80
15.10
12.80
4.30
4.30
5
0.1
4.30
4.40
30.30
0.587
0.496
0.138
0.161
0.181
-0.002
0.157
0.157
1.185
Inches
0.976
STTH200F04
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
0.594
0.504
0.169
0.169
0.197
0.004
0.169
0.173
1.193
8/10 DocID031309 Rev 1
STTH200F04
3
Ordering information
Ordering information
Table 7: Ordering information
Order code Marking Package Weight
STTH200F04TV1 STTH200F04TV1 ISOTOP
27 g
(without screws)
Base qty.
(1)
10 (with screws)
Delivery mode
Tube
Notes:
(1)
This product is supplied with 40 terminal screws and washers for each tube. The screws and washers are supplied in a separate pack with the order.
4 Revision history
Date
04-Dec-2017
Table 8: Document revision history
Revision
1
Changes
Initial release.
DocID031309 Rev 1 9/10
STTH200F04
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics
– All rights reserved
10/10 DocID031309 Rev 1
