STTH200L06TV
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
A1
A2
A1
A2
K1
ISOTOP
K1
K2
K2
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
Insulated package ISOTOP:
Insulated voltage: 2500 V
RMS
sine
Description
This device, which uses ST Turbo 2 600 V technology, is especially suited for use in switching power supplies and industrial applications, like rectification and freewheeling diodes.
Table 1: Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max.)
V
F
(typ.) t rr
(max.) up to 2 x 120 A
600 V
150 °C
0.95 V
80 ns
TM: ISOTOP is a trademark of
STMicroelectronics
November 2017 DocID10767 Rev 3
This is information on a product in full production.
1/10 www.st.com
Characteristics
1 Characteristics
Symbol
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
Forward rms current
I
F(AV)
Table 2: Absolute ratings (limiting values, per diode)
Parameter
Average forward current,
δ = 0.5
T c
= 65 °C, per diode
Notes:
(1)
Pulse test: t p
= 5 ms, δ < 2%
(2)
Pulse test: t p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.93 x I
F(AV)
+ 0.0027 x I
F
2
(RMS)
STTH200L06TV
Value
600
180
100
120
800
Unit
V
A
A
I
FSM
I
R
(1)
V
F
(2)
Surge non repetitive forward current
T c
= 35 °C, per diode t p
= 10 ms sinusoidal A
T stg
T j
Storage temperature range
Maximum operating junction temperature
-55 to +150 °C
150 °C
Table 3: Thermal parameters
Symbol Parameter
Maximum values
Unit
R th(j-c)
Junction to case
Per diode
Total
0.60
0.35
0.1
°C/W
R th(c)
Coupling
When the diodes 1 and 2 are used simultaneously:
Δ T j
(diode1) = P
(diode1) x R th(j-c) (per diode)
+ P
(diode2)
x R th(c)
Symbol
Table 4: Static electrical characteristics
Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 150 °C
V
R
= V
RRM
I
F
= 100 A
-
-
-
-
100
100 1000
1.55
0.95 1.20
µA
V
2/10 DocID10767 Rev 3
STTH200L06TV Characteristics
Symbol t rr
I
RM t fr
V
FP
Parameter
Table 5: Dynamic characteristics (per diode)
Test conditions Min. Typ. Max. Unit
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
T
T
T
T j j j j
= 25 °C
= 125 °C
= 25 °C
= 25 °C
I
F
= 0.5 A,
I rr
= 0.25 A,
I
R
= 1 A
I
F
= 1 A, dI
F
/dt = 50 A/μs,
V
R
= 30 V
I
F
= 100 A, dI
F
/dt = 400
A/μs, dI
F
/dt = 100 A/μs
I
F
= 100 A, dI
F
/dt = 200 A/μs
V
FR
= 1.1 x V
Fmax
I
F
= 100 A,
dI
F
/dt = 200 A/μs
V
FR
= 1.1 x V
Fmax
-
-
-
-
-
85
15
3.4
80
120
20
700 ns
A ns
V
DocID10767 Rev 3 3/10
Characteristics STTH200L06TV
1.1 Characteristics (curves)
Figure 2: Forward voltage drop versus forward current (per diode)
80
60
40
20
0
0
200
Figure 1: Conduction losses versus average forward current (per diode)
P(W)
δ = 0.5
δ = 1
180
δ = 0.2
160
δ = 0.1
140
δ = 0.05
120
100
20 40 60
I
F(AV)
(A)
80 100 120
δ =tp/T
T
140 tp
160
Figure 3: Relative variation of thermal impedance junction to case versus pulse duration
Z th(j-c)
/R th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 t
P
(s)
1.E+01
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values, per diode)
30
20
10
60
Figure 4: Peak reverse recovery current versus dI
F
/dt (typical values, per diode)
I
RM
(A)
V
R
T j
= 400 V
= 125 °C
50
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
40
0
0 50 100
I
F
= 0.5 x I
F(AV)
150 200 250 300 350 dI
F
/dt(A/µs)
400 450 500
Figure 6: Reverse recovery charges versus dI
F
/dt
(typical values, per diode)
4/10
1400 trr(ns) dI
F
/dt(A/µs)
1200
1000
800
600
400
200
0
0
I
F
= 2 x I
F(AV)
V
R
T j
= 400 V
= 125 °C
I
F
= I
F(AV)
50 100
I
F
= 0.5 x I
F(AV)
150 200 250 300 350 400 450 500
5.0
Q rr
(µC)
4.5
4.0
V
R
T j
= 400 V
= 125 °C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 100
DocID10767 Rev 3
200
I
F
= 2 x I
F(AV)
300
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV) dI
F
/dt(A/µs)
400 500
STTH200L06TV
1.2
1.0
0.8
0.6
0.4
Figure 7: Reverse recovery softness factor versus dI
F
/dt (typical values, per diode)
Sfactor
1.6
1.4
I
F
< 2 x I
F(AV)
V
T j
R
= 400 V
= 125 °C
Characteristics
Figure 8: Relative variations of dynamic parameters versus junction temperature
0.2
dI
F
/dt(A/µs)
0.0
0 50 100 150 200 250 300 350 400 450 500
8
Figure 9: Transient peak forward voltage versus dI
F
/dt (typical values, per diode)
V
FP
(V)
T j
I
F
= I
F(AV)
= 125 °C
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 dI
F
/dt(A/µs)
400 450 500
200
150
100
50
0
400
350
300
250
0
600
Figure 10: Forward recovery time versus dI
F
/dt
(typical values, per diode) t fr
(ns)
550
500
V
FR
I
F
= I
F(AV)
= 1.1 x V
F max.
T j
= 125 °C
450
100 200 300 dI
F
/dt(A/µs)
400 500
Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode)
10000
C(pF)
F = 1 MHz
V
OSC
T j
= 30 mV
RMS
= 25 °C
1000
100
10
1 10 100
V
R
(V)
1000
DocID10767 Rev 3 5/10
Package information
2 Package information
STTH200L06TV
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 1.3 N·m
Maximum torque value: 1.5 N·m
STMicroelectronics strongly recommends the use of the screws delivered with this product.
The use of any other screws is entirely at the user's own risk and will invalidate the warranty.
6/10 DocID10767 Rev 3
STTH200L06TV
2.1 ISOTOP package information
Figure 12: ISOTOP package outline
Package information
DocID10767 Rev 3 7/10
Package information
Ref.
G2
F
F1
H
E1
E2
G
G1
A
A1
B
C
C2
D
D1
E
Diam P
P1
S
STTH200L06TV
14.90
12.60
3.50
4.10
4.60
-0.05
4
4
30.10
Table 6: ISOTOP package mechanical data
Dimensions
Millimeters
Min.
11.80
8.90
7.80
0.75
1.95
37.80
31.50
25.15
23.85
Max.
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
Min.
0.460
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
24.80
15.10
12.80
4.30
4.30
5
0.1
4.30
4.30
30.30
0.587
0.496
0.138
0.161
0.181
-0.002
0.157
0.157
1.185
Inches
0.976
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
0.594
0.504
0.169
0.169
0.197
0.004
0.69
0.69
1.193
8/10 DocID10767 Rev 3
STTH200L06TV
3 Ordering information
Order code Marking
Table 7: Ordering information
Package Weight
Ordering information
Base qty.
STTH200L06TV1 STTH200L06TV1 ISOTOP
27 g
(without screws)
10
(with screws)
Delivery mode
Tube
4 Revision history
Date
Table 8: Document revision history
Revision Changes
07-Sep-2004
05-Sep-2011
06-Nov-2017
1
2
3
First issue.
Updated Figure 6 .
Updated Section "Features"
and Section 2.1:
"ISOTOP package information" .
DocID10767 Rev 3 9/10
STTH200L06TV
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics
– All rights reserved
10/10 DocID10767 Rev 3
