STPSC2H12-Y
Datasheet
Automotive 1200 V, 2 A power Schottky silicon carbide diode
Product label
Product status link
STPSC2H12-Y
Product summary
I
F(AV)
V
RRM
2 A
1200 V
T j
(max.)
V
F
(typ.)
175 °C
1.35 V
Features
• AEC-Q101 qualified
• PPAP capable
• No or negligible reverse recovery
• High forward surge capability
• Operating T j
from -40 °C to 175 °C
• Creepage distance of 3 mm as per IEC 60664-1
• ECOPACK2 compliant component
Applications
• Bootstrap function of SiC MOS-FETS
• Snubber diode
• Switching diode
Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC
MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible performance of their controlled switches in all conditions. This rectifier will enhance the performance of the targeted application.
Its improved creepage distance ensures the compatibility with industrial and automotive creepage standards.
DS13118 - Rev 2 - September 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
DS13118 - Rev 2
STPSC2H12-Y
Characteristics
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
I
I
F(AV)
FRM
FSM
Average forward current
Repetitive peak forward current
Surge non repetitive forward current
Parameter
Repetitive peak reverse voltage (T j
= -40 °C to +175 °C)
Forward rms current
T c
= 160 °C, DC
(1)
T c
= 120 °C, DC
(1)
T c
= 160 °C, T j
= 175 °C, δ = 0.1, f w
> 10 kHz t p
= 10 ms sinusoidal, T c
= 25 °C t p
= 10 ms sinusoidal, T c
= 150 °C
T stg
T j
Storage temperature range
Operating junction temperature range
1. Value based on R th(j-c) max.
Value
1200
10
2
5
A
9
15
A
A
13
-65 to +175 °C
-40 to +175 °C
Unit
V
A
Symbol
Table 2. Thermal resistance parameters
Value
Parameter
Junction to case
Typ.
1.9
Max.
2.7
R th(j-c)
For more information, please refer to the following application note:
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Parameter
Reverse leakage current
Forward voltage drop
Table 3. Static electrical characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
I
V
F
R
= V
RRM
= 2 A
1. Pulse test: t p
= 10 ms, δ < 2%
2. Pulse test: t p
= 500 µs, δ < 2%
Min.
-
-
-
-
To evaluate the conduction losses, use the following equation:
P = 1.12 x I
F(AV)
+ 0.565 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Typ.
1
6
1.35
1.75
Max.
12
80
1.50
2.25
Unit
µA
V
Symbol
Q
Cj
(1)
Parameter
Total capacitive charge
Table 4. Dynamic electrical characteristics
Test conditions
V
R
= 800 V
Min.
Typ.
Max.
Unit
15.6
nC page 2/10
STPSC2H12-Y
Characteristics (curves)
Symbol Parameter Test conditions
C j
Total capacitance
V
R
= 0 V, T c
= 25 °C, F = 1 MHz
V
R
= 800 V, T c
= 25 °C, F = 1 MHz
1.
VR
Most accurate value for the capacitive charge:
0
Cj V dV
Characteristics (curves)
Min.
Typ.
Max.
Unit
-
190
13
-
pF
1.1
Figure 1. Forward voltage drop versus forward current
(typical values)
Figure 2. Reverse leakage current versus reverse voltage applied (typical values)
4
I
F
(A)
Pulse test : t p
= 500 µs
3
T a
= -40 °C T a
= 25 °C
1.E+01
I
R
(µA)
1.E+00
T j
= 150 °C
1.E-01
2
T a
= 150 °C
T j
= 25 °C
1.E-02
1
0
0.0
0.5
1.0
1.5
2.0
2.5
V
F
(V)
3.0
1.E-03
V
R
(V)
1.E-04
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
Figure 3. Peak forward current versus case temperature
(f w
> 10 kHz)
35
I
M
(A)
δ = 0.1
30
25
20
15
δ = 0.3
δ = 0.5
10
5
0
0
δ = 1 δ = 0.7
25 50 75
T
C
(°C)
100 125 150 175
Figure 4. Junction capacitance versus reverse voltage applied (typical values)
200
C j
(pF)
180
160
140
120
100
80
60
40
20
0
0.1
1.0
10.0
100.0
F = 1 MHz
V
OSC
= 30 mV
RMS
T j
= 25 °C
1000.0
V
R
(V)
10000.0
DS13118 - Rev 2 page 3/10
STPSC2H12-Y
Characteristics (curves)
Figure 5. Relative variation of thermal impedance junction to case versus pulse duration
Z th(j-c)
/R th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 t p
(s)
1.E+00
Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)
1.E+03
I
FSM
(A)
1.E+02
1.E+01
1.E-05
T a
= 25 °C
1.E-04
T a
= 150 °C t p
(s)
1.E-03 1.E-02
Figure 7. Total capacitive charges versus reverse voltage applied (typical values)
Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, e
Cu
= 70 μm)
16
Q
Cj
(nC)
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600 700
V
R
(V)
800
100
90
80
70
60
50
40
30
20
10
0
0
R th(j-a)
(°C/W)
5 10 15 20 25 30
DPAK HV
S
Cu
(cm²)
35 40
DS13118 - Rev 2 page 4/10
2
2.1
STPSC2H12-Y
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
•
•
DPAK HV 2L package information
Epoxy meets UL 94,V0
Cooling method: by conduction (C)
Figure 9. DPAK HV 2L package outline
Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.
DS13118 - Rev 2 page 5/10
Ref.
D
D1
E
E1 e
A
A1
A2 b b4 c c2
L1
L2
V2 e1
H
L
0.45
0.48
6.00
4.60
6.40
4.95
2.16
Min.
2.20
0.90
0.03
0.64
5.20
4.40
9.35
1.00
2.60
0.65
0°
STPSC2H12-Y
DPAK HV 2L package information
Table 5. DPAK HV 2L package mechanical data
Dimensions
Millimeters
Typ.
2.29
0.76
5.10
4.70
5.10
2.28
2.80
0.80
0.60
0.60
6.20
4.80
6.60
5.25
2.40
Max.
2.40
1.10
0.23
0.90
5.40
4.60
10.10
1.50
3.00
0.95
8°
0.017
0.018
0.236
0.181
0.251
0.194
0.085
Min.
0.086
0.035
0.001
0.025
0.204
0.173
0.368
0.039
0.102
0.025
0°
Inches (for reference only)
Typ.
0.090
0.030
0.201
0.185
0.201
0.090
0.110
0.031
0.024
0.024
0.245
0.189
0.260
0.207
0.095
Max.
0.095
0.044
0.010
0.036
0.213
0.182
0.398
0.060
0.119
0.038
8°
Figure 10. Footprint (dimensions in mm)
Note: For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173.
DS13118 - Rev 2 page 6/10
2.1.1
Note:
STPSC2H12-Y
DPAK HV 2L package information
Creepage distance between anode and cathode
Symbol
Cd
A-K
Table 6. Creepage distance between anode and cathode
Parameter
Minimum creepage distance between A and K DPAK HV
DPAK HV creepage distance (anode to cathode) =3.0 mm min. (refer to IEC 60664-1)
Value
3.0
Unit mm
DS13118 - Rev 2 page 7/10
3
STPSC2H12-Y
Ordering information
Ordering information
Order code
STPSC2H12B2Y-TR
Table 7. Ordering information
Marking
PSC2 H12Y
Package
DPAK HV
Weight
0.350 g
Base qty.
2500
Delivery mode
Tape and reel
DS13118 - Rev 2 page 8/10
Revision history
Date
19-Sep-2019
21-Sep-2021
Revision
1
2
Table 8. Document revision history
Changes
Initial release.
Updated Figure 2.
STPSC2H12-Y
DS13118 - Rev 2 page 9/10
STPSC2H12-Y
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DS13118 - Rev 2 page 10/10
