2STN2540
Low voltage fast-switching PNP power bipolar transistor
Features
■
■
■
■
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Surface mounting device in medium power
SOT-223 package
Applications
■
■
■
■
■
Emergency lighting
LED
CCFL drivers (back lighting)
Voltage regulation
Relay driver
Description
The device is a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
4
1
SOT-223
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code Marking
2STN2540 N2540
Package
SOT-223
January 2008 Rev 3
Packaging
Tape and reel
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9
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P tot
T stg
T
J
Absolute maximum rating
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base peak current (t
P
< 5ms)
Total dissipation at T amb
= 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Thermal data
Symbol Parameter
R thj-amb
(1)
Thermal resistance junction-amb __ max
1.
Device mounted on PCB area of 1cm
2
Value
-40
-40
-6
-5
-10
-2
1.6
-65 to 150
150
Unit
W
°C
A
A
°C
V
A
V
V
Value
78
2STN2540
Unit
°C/W
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2STN2540 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol Parameter Test conditions
I
I
CBO
EBO
Collector cut-off current
(I
E
=0)
Emitter cut-off current
(I
C
=0)
V
V
CB
EB
= -30 V
= -5 V
V
CE(sat)
(1)
Collector-emitter saturation voltage
I
C
= -0.5 A I
B
= -5 mA
I
C
= -1 A I
B
= -10 mA
I
C
= -2 A I
B
= -200 mA
I
C
= -5 A I
B
= -500 mA
V
BE(sat)
(1)
Base-emitter saturation voltage
I
C
= -5 A I
B
= -500 mA
V
BE(on)
(1) Base-emitter on voltage V
CE
= -2 V I
C
= -2 A h
C
FE
(1)
CBO
DC current gain
Collector-base capacitance
I
C
= -0.5 A V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
I
C
= -2 A V
CE
= -2 V
I
C
= -5 A V
CE
= -2 V
I
E
= 0 V
CB
= -10 V f = 1 MHz t on t s t f
Resistive load
Turn-on time
Storage time
Fall time
1.
Pulsed duration = 300 µs, duty cycle
≤
I
C
= -1 A _ V
CC
= -10 V
-I
B1
= I
B2
= -0.1 A
T p
= 30 µs
Min.
Typ.
Max.
Unit
-0.1
µ
A
250
200
150
50
-0.1
-80
-120
-140
-350
-120
-180
-200
-450
µ
A mV mV mV mV
-1.3
-1.25
V
V
80
75
426
62 pF ns ns ns
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Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2.
Output characteristics Figure 3.
DC current gain
2STN2540
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
Figure 6.
Base-emitter on voltage Figure 7.
Resistive load switching times
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2STN2540
Figure 8.
Resistive load switching times
Electrical characteristics
Figure 9.
Capacitance
Figure 10.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data 2STN2540
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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2STN2540 Package mechanical data
DIM.
B1 c
D e
A
A1
B e1
E
H
V
0.02
0.60
2.
9 0
0.24
6.
3 0 min.
S OT-22 3 mechanical data mm.
typ
3 .
3 0
6.70
2.
3 0
4.60
3 .50
7.00
0.70
3 .00
0.26
6.50
max.
1.
8 0
0.1
0.
8 5
3 .15
0.
3 5
6.70
3 .70
7.
3 0
10 o
0046067_L
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Revision history 2STN2540
Table 5.
Date
23-Oct-2003
03-Nov-2006
14-Jan-2008
Document revision history
Revision
1
2
3
Changes
Initial release
Added new graphics: fig.2, fig. 7, fig.8, fig.9.
Document status promoted from preliminary data to datasheet.
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2STN2540
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