STW40N95K5
Nchannel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
TO-247
1
2
3
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max I
D
P
TOT
STW40N95K5 950 V 0.130 Ω 38 A 450 W
Industry’s lowest R
DS(on)
x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code
STW40N95K5
Table 1: Device summary
Marking Package
40N95K5 TO-247
Packaging
Tube
November 2014 DocID026447 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STW40N95K5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package mechanical data ............................................................. 10
4.1
TO-247 package information ........................................................... 10
5 Revision history ............................................................................ 12
2/13 DocID026447 Rev 2
STW40N95K5
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
GS
I
D
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
I
DM
P
TOT
I
I
D
(1)
AR
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
C
= 100 °C
Max current during repetitive or single pulse avalanche
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= 13 A, V
DD
= 50 V)
dv/dt (2)
Peak diode recovery voltage slope
dv/dt (3)
MOSFET dv/dt ruggedness
T j
T stg
Operating junction temperature
Storage temperature
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 19 A, di/dt ≤ 100 A/µs, V
DS(peak)
≤ V
(BR)DSS.
(3)
V
DS
≤ 760 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-amb max
Electrical ratings
Value
± 30
38
24
152
450
13
700
4.5
50
-55 to 150 mJ
V/ns
V/ns
°C
Unit
A
W
A
V
A
A
Value
0.28
50
Unit
°C/W
°C/W
DocID026447 Rev 2 3/13
Electrical characteristics
2
4/13
STW40N95K5
Electrical characteristics
(T case
=25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0, I
D
= 1 mA
I
DSS
Symbol
Zero gate voltage drain current
Parameter
V
GS
= 0, V
DS
= 950 V
V
GS
= 0, V
DS
= 950 V,
T
C
=125 °C
I
GSS
Gate-body leakage current V
DS
=0, V
GS
= ± 20 V
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA
R
DS(on)
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 19 A
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
C
o(tr)
(1)
C
o(er)
(2)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
GS
=0, V
DS
=100 V, f=1 MHz
V
GS
= 0, V
DS
= 0 to 760 V f = 1 MHz, I
D
=0
V
DD
= 760 V, I
D
= 38 A
V
GS
=10 V
(see Figure 16: "Gate charge test circuit" )
Min. Typ. Max. Unit
950
3
Min. Typ. Max. Unit
-
-
3300
250
-
- pF pF
-
-
-
-
-
-
-
4
1
50
0.110 0.130
Ω
2
398
142
5
93
18.7
63.4
-
-
-
-
-
-
-
V
µA
µA
±10 µA
5 V pF pF pF
Ω nC nC nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
(2) energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss
when V
DS increases from 0 to 80% V
DSS
Symbol Parameter
Table 6: Switching times
Test conditions Min. Typ. Max Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 475 V, I
D
= 19 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15: "Switching times test circuit for resistive load" )
- 33.5 -
- 51 -
- 91.5 -
- 10 - ns ns ns ns
DocID026447 Rev 2
STW40N95K5 Electrical characteristics
Symbol Parameter
I
SD t rr
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage
Reverse recovery time
I
I
Q t
Q rr
RRM rr rr
RRM
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7: Source drain diode
Test conditions
I
SD
= 38 A, V
GS
= 0
I
SD
= 38 A, di/dt = 100 A/µs
V
DD
= 60 V
(see Figure 18: " Unclamped inductive load test circuit" )
I
SD
= 38 A, di/dt = 100 A/µs
V
DD
= 60 V T
J
= 150 °C
(see Figure 18: " Unclamped inductive load test circuit" )
Min. Typ. Max Unit
- 38 A
- 152 A
- 1.5 V
- 706 ns
- 22 µC
- 62 A
- 886 ns
- 28.2 µC
- 64 A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Table 8: Gate-source Zener diode
Parameter Test conditions Min Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
=0 30 - -
The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
V
DocID026447 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STW40N95K5
Figure 3: Thermal impedance
K
δ=0.5
AM09125v1
0.2
0.1
10
-1
0.01
Single pulse
0.02
0.05
Z th =k R thj-c
δ=tp/ t
-2
10
10
-4
10
-3
10
-2 t p t
10
-1 t p
(s)
Figure 4: Output characteristics Figure 5: Transfer characteristics
6/13
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID026447 Rev 2
STW40N95K5
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance
GIPD121120141039FSR
R DS(on)
(norm)
2.6
V
GS
= 10V
2.2
1.8
1.4
1
0.6
0.2
-50 0 50 100 T j
(°C)
Figure 12: Output capacitance stored energy
Figure 11: Normalized V(BR)DSS vs temperature
GIPD121120141041FSR
V (BR)DSS
(norm)
1.12
I
D
= 1m A
1.08
1.04
1.00
0.96
0.92
0.88
-50 0 50 100 T j
(°C)
Figure 13: Source-drain diode forward characteristics
DocID026447 Rev 2 7/13
Electrical characteristics
Figure 14: Maximum avalanche energy vs T J
GIPD141120141040FSR
E AS
(mJ)
600
400
200
Single pulse
I D = 13 A
V DD = 50V
0
-50 0 50 100 T j
(°C)
STW40N95K5
8/13 DocID026447 Rev 2
STW40N95K5
3 Test circuits
Figure 15: Switching times test circuit for resistive load
Test circuits
Figure 16: Gate charge test circuit
Figure 17: Test circuit for inductive load switching and diode recovery times
Figure 18: Unclamped inductive load test circuit
Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform
DocID026447 Rev 2 9/13
Package mechanical data
4
4.1
Package mechanical data
STW40N95K5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
TO-247 package information
Figure 21: TO-247 drawing
10/13 DocID026447 Rev 2
STW40N95K5
Dim.
L1
L2
ØP
ØR
D
E e
L
S
A
A1 b b1 b2 c
Table 9: TO-247 mechanical data mm.
Typ. Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
18.50
3.55
4.50
5.30
5.45
5.50
Package mechanical data
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID026447 Rev 2 11/13
Revision history
5
STW40N95K5
Revision history
Date Revision
Table 10: Document revision history
Changes
03-Jun-2014
14-Nov-2014
1
2
First release.
Document status promoted from preliminary to production data.
Added Section 2.1: "Electrical characteristics (curves)" .
12/13 DocID026447 Rev 2
STW40N95K5
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