STB20N95K5, STF20N95K5,
STP20N95K5, STW20N95K5
Nchannel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5
Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
Figure 1: Internal schematic diagram
Order code
STB20N95K5
STF20N95K5
STP20N95K5
STW20N95K5
Features
Order code V
DS
R
DS(on)
max. I
D
STB20N95K5
STF20N95K5
950 V
0.330 Ω
17.5 A
STP20N95K5
STW20N95K5
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
P
TOT
250 W
40 W
250 W
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Table 1: Device summary
Marking Package
20N95K5
D²PAK
TO-220FP
TO-220
TO-247
Packing
Tape and reel
Tube
January 2017 DocID16825 Rev 5
This is information on a product in full production.
1/22 www.st.com
Contents STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
D 2 PAK package information ............................................................ 10
4.2
4.3
4.4
4.5
TO-220FP package information ...................................................... 13
TO-220 type A package information ................................................ 15
TO-247 package information ........................................................... 17
D 2 PAK packing information ............................................................. 19
5 Revision history ............................................................................ 21
2/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter
D²PAK
TO-220
TO-247
Value
V
GS
I
D
I
D
I
D
(1)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
ESD
Gatesource human body model (R= 1,5 kΩ,
C = 100 pF)
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;
T
C
= 25 °C)
dv/dt (2)
Peak diode recovery voltage slope
dv/dt (3)
MOSFET dv/dt ruggedness
T j
T stg
Operating junction temperature range
Storage temperature range
250
±30
17.5
11
70
2
6
50
-55 to 150
TO-220FP
40
2500
Unit kV
V
V/ns
°C
V
A
A
A
W
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 17.5 A, di/dt ≤ 100 A/μs; V
DS peak ≤ V
(BR)DSS
(3)
V
DS
≤ 760 V
Table 3: Thermal data
Symbol Parameter
Value
D²PAK TO-220 TO-247 TO-220FP
Unit
R thj-case
Thermal resistance junction-case
R thj-amb
Thermal resistance junction-ambient
R
thj-pcb
(1)
Thermal resistance junction-pcb 30
0.5
62.5 50
3.1
62.5
Notes:
(1)
When mounted on 1 inch² FR-4 board, 2 Oz Cu.
Symbol
Table 4: Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax.
)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
°C/W
Value Unit
6 A
200 mJ
DocID16825 Rev 5 3/22
Electrical characteristics
2
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 5: On/off-state
Test conditions
V
(BR)DSS
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 950 V
I
DSS
Zero-gate voltage drain current V
GS
= 0 V, V
DS
T
C
= 125 °C (1)
= 950 V
I
GSS
Gate body leakage current
V
GS(th)
Gate threshold voltage
V
V
DS
DS
= 0 V, V
= V
GS
, I
GS
D
= ±20 V
= 100 µA
R
DS(on)
Static drain-source on-resistance V
GS
= 10 V, I
D
= 9 A
Min. Typ. Max. Unit
950 V
1 µA
50 µA
±10 µA
4 5 V
0.275 0.330
Ω
3
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
o(er)
(1)
C
o(tr)
(2)
R g
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance energy related
Equivalent capacitance time related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 0 to
760 V f = 1 MHz , I
D
= 0 A
V
DD
= 760 V,
I
D
= 17.5 A
V
GS
= 10 V
(see Figure 20: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
-
1550
140
1
-
-
- pF pF pF
-
-
-
-
-
65
178
3.5
48
9
32.5
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
C o(er)
is a constant capacitance value that gives the same stored energy as C oss
while V
DS
is rising from 0 to
80% V
DSS
.
(2)
C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to
80% V
DSS
.
4/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Table 7: Switching times
Symbol Parameter Test conditions t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 475 V, I
D
= 9 A, R
G
= 4.7 Ω
V
GS
= 10 V
(see Figure 19: "Test circuit for resistive load switching times" and Figure 24:
"Switching time waveform" )
Table 8: Source-drain diode
Test conditions Symbol
I
I t t
SD
SDM
V
I
I
SD
Q
Q rr rr rr
(2)
rr
RRM
(1)
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 17.5 A, V
GS
= 0 V
I
SD
= 17.5 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see Figure 21: "Test circuit for inductive load switching and diode recovery times" )
I
SD
= 17.5 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 21: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
18
9
65
18
-
-
-
- ns ns ns ns
Min. Typ. Max. Unit
- 17.5 A
- 70
- 1.5
- 513
- 12
- 46
- 670
- 15
- 44
A
A
V ns
µC ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions
V
(BR) GSO
Gate-source breakdown voltage
Min. Typ. Max. Unit
I
GS
= ± 1 mA, I
D
= 0 A 30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
DocID16825 Rev 5 5/22
Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK and TO-220
Figure 3: Thermal impedance for D²PAK and
TO-220
Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP
6/22
Figure 6: Safe operating area for TO-247 Figure 7: Thermal impedance for TO-247
DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Figure 8: Output characteristics
Electrical characteristics
Figure 9: Transfer characteristics
Figure 10: Gate charge vs gate-source voltage Figure 11: Static drain-source on-resistance
Figure 12: Capacitance variation Figure 13: Output capacitance stored energy
DocID16825 Rev 5 7/22
Electrical characteristics
Figure 14: Normalized gate threshold voltage vs temperature
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Figure 15: Normalized on-resistance vs temperature
Figure 16: Maximum avalanche energy vs. starting T
J
Figure 17: Normalized V
(BR)DSS
vs. temperature
Figure 18: Source-drain diode forward characteristics
8/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
3 Test circuits
Figure 19: Test circuit for resistive load switching times
Test circuits
Figure 20: Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
100 Ω D.U.T.
V
G
AM01469v10
Figure 21: Test circuit for inductive load switching and diode recovery times
Figure 22: Unclamped inductive load test circuit
Figure 23: Unclamped inductive waveform Figure 24: Switching time waveform
DocID16825 Rev 5 9/22
Package information
4
4.1
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
D 2 PAK package information
Figure 25: D²PAK (TO-263) type A package outline
10/22 DocID16825 Rev 5
0079457_A_rev22
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
Table 10: D²PAK (TO-263) type A package mechanical data mm
Dim.
Min. Typ. Max.
D1
D2
E
E1
E2 e e1
H
A
A1 b b2 c c2
D
J1
L
L1
L2
R
V2
4.88
15
2.49
2.29
1.27
1.30
7.50
1.10
10
8.50
6.85
4.40
0.03
0.70
1.14
0.45
1.23
8.95
0°
8.70
7.05
2.54
0.4
7.75
1.30
5.28
15.85
2.69
2.79
1.40
1.75
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
8°
DocID16825 Rev 5 11/22
Package information STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Figure 26: D²PAK (TO-263) recommended footprint (dimensions are in mm)
12/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
4.2 TO-220FP package information
Figure 27: TO-220FP package outline
Package information
DocID16825 Rev 5 13/22
Package information
Dim.
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
E
F
F1
F2
A
B
D
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Table 11: TO-220FP package mechanical data mm
Typ. Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
28.6
9.8
2.9
15.9
9
3
30.6
10.6
3.6
16.4
9.3
3.2
14/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
4.3 TO-220 type A package information
Figure 28: TO-220 type A package outline
Package information
DocID16825 Rev 5 15/22
Package information
Dim. e e1
F
H1
J1
L
L1
L20
A b b1 c
D
D1
E
L30
øP
Q
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Table 12: TO-220 type A mechanical data mm
Typ. Min.
4.40
0.61
1.14
0.48
15.25
1.27
Max.
4.60
0.88
1.55
0.70
15.75
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
16/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
4.4 TO-247 package information
Figure 29: TO-247 package outline
Package information
DocID16825 Rev 5
0075325_8
17/22
Package information
Dim.
E e
L
L1
L2
ØP
ØR
S
A
A1 b b1 b2 c
D
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Table 13: TO-247 package mechanical data mm
Typ. Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
18/22 DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
4.5 D 2 PAK packing information
Figure 30: Tape outline
Package information
DocID16825 Rev 5 19/22
Package information STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Figure 31: Reel outline
20/22
Dim.
P1
P2
R
T
W
E
F
K0
P0
A0
B0
D
D1
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
Table 14: D²PAK tape and reel mechanical data
Tape Reel mm
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
Dim.
Min.
A
B
C
D
G
N
T
Base quantity
Bulk quantity
1.5
12.8
20.2
24.4
100
0.35
24.3 mm
Max.
330
1000
1000
13.2
26.4
30.4
DocID16825 Rev 5
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
5
Revision history
Revision history
Date Revision
Table 15: Document revision history
Changes
25-Nov-2009
12-Jan-2010
22-Dec-2011
06-Jun-2012
16-Jan-2017
1
2
3
4
5
First release.
Corrected V
GS
value in Table 2: Absolute maximum ratings.
Inserted device in D 2 PAK.
Document status promoted from preliminary data to datasheet.
Added: Section 2.1: Electrical characteristics (curves)
Updated Section 4: Package mechanical data.
Added Section 5: Packaging mechanical data.
Minor text changes.
Figure 9: Transfer characteristics has been updated.
Updated title, features, description and schematic diagram in cover page.
Minor text changes in Section 1: "Electrical ratings"
and Section 2:
"Electrical characteristics" .
Updated Section 2.1: "Electrical characteristics (curves)"
Updated package information section.
DocID16825 Rev 5 21/22
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
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22/22 DocID16825 Rev 5
