STD16NF06
N-Channel 60V - 0.060
Ω
- 16A - DPAK
STripFET™ II Power MOSFET
General features
Type
STD16NF06
V
DSS
60V
R
DS(on)
<0.070
Ω
■
■
■
■
Typical R
DS(on)
= 0.060
Ω
Exceptional dv/dt Capability
100% Avalanche Tested
Application Oriented Characterization
I
D
16A
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility
Applications
■
■
■
Audio Amplifiers
Power Tools
Automotive Environment
DPAK
TO-252
1
3
Internal schematic diagram
Order codes
Part Number
STD16NF06T4
January 2006
Marking
D16NF06
Package
TO-252
Packaging
TAPE & REEL
Rev 1
1/11 www.st.com
11
1 Electrical ratings
Table 1.
Absolute maximum ratings
Symbol Parameter
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0V)
Drain-gate Voltage (R
GS
= 20 k Ω )
V
GS
I
D
I
D
P
TOT
Gate-Source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
I
DM
Note 4
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
C
= 100°C
Derating Factor
Peak Diode Recovery voltage slope dv/dt
EAS
T
J
T stg
Single Pulse Avalanche Energy
Operating Junction Temperature
Storage Temperature
Table 2.
Thermal data
R thJC
Thermal Resistance Junction-case Max
R thJA
Thermal Resistance Junction-amb Max
T l
Maximum Lead Temperature For Soldering
Purpose
STD16NF06
Value
11
64
40
0.27
10.5
178
60
60
± 20
16
-55 to 175
3.75
100
275
Unit
A
A
W
W/°C
V/ns mJ
V
A
V
V
°C
°C/W
°C/W
°C
2/11
STD16NF06 2 Electrical characteristics
( T
CASE
= 25 °C unless otherwise specified )
Table 3.
On/off states
Symbol Parameter
V
(BR)DSS
Drain-Source Breakdown
Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage Drain
Current (V
GS
= 0)
Gate Body Leakage Current
(V
DS
= 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
I
D
= 250 µ A V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
=125°C
V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
V
GS
= 10V I
D
= 8A
Table 4.
Dynamic
Symbol Parameter Test Conditions g
fs
Note 5
Forward Transconductance
C iss
C oss
C rss
Q g
Q gs
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
V
DS
= 15V, f = 1MHz, V
GS
= 0
V
DD
= 25V I
=30 I
V
GS
=10V
Figure 14 on page 7
D
= 8A
D
= 16A
Min.
60
2
Min.
Table 5.
Switching times
Symbol Parameter t d(on) t r
Turn-on Delay Time
Rise Time t d(off) t f
Off voltage Rise Time
FallTime
Test Conditions
V
DD
= 30V, I
D
= 8A,
R
G
= 4.7
Ω, V
GS
= 10V
Figure 13 on page 7
V
DD
= 30V, I
D
= 8A,
R
G
= 4.7
Ω, V
GS
= 10V
Figure 15 on page 7
Min.
Typ.
Typ.
6
400
103
41.5
14.1
2.8
5.4
Typ.
4
15
16
5.5
Max.
1
10
±
100
0.060
0.070
Max.
Max.
µA
V
Ω
Unit
V
µA
µA
Unit ns ns ns ns
Unit
S pF pF pF nC nC nC
3/11
2 Electrical characteristics
Table 6.
Source drain diode
Symbol Parameter Test Conditions
I
SD
I
SDM
Note 4
Source-drain Current
Source-drain Current (pulsed)
V
SD
Note 5
Forward on Voltage t rr
Q rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 8A V
GS
= 0
I
SD
V
= 16A, di/dt = 100A/µs,
DD
= 20V, T
J
=150°C
Figure 15 on page 7
Note: 1 Value limited by wire bonding
2 Garanted when external Rg=4.7 Ω and t f
< t fmax
.
3 Starting T
J
= 25°C, I
D
= 19A, V
DD
= 18V
4 Pulse width limited by safe operating area
5 Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min.
STD16NF06
Typ.
49
78
3.2
Max.
16
64
1.5
Unit
A
A
V ns
µ C
A
4/11
STD16NF06
2.1 Electrical chraracteristics (curves)
Figure 1.
Safe Operating Area
2 Electrical characteristics
Figure 2.
Thermal Impedance
Figure 3.
Output Characteristics Figure 4.
Transfer Characteristics
Figure 5.
Transconductance Figure 6.
Static Drain-Source on Resistance
5/11
2 Electrical characteristics
Figure 7.
Gate Charge vs Gate-Source Voltage Figure 8.
Capacitance Variations
STD16NF06
Figure 9.
Normalized Gate Threshold Voltage vs Temperature
Figure 10. Normalized on Resistance vs
Temperature
Figure 11. Source-drain Diode Forward
Characteristics
Figure 12. Normalized Breakdown Voltage vs
Temperature
6/11
STD16NF06
Figure 13. Switching Times Test Circuit For
Resistive Load
Figure 14. Gate Charge Test Circuit
3 Test circuits
Figure 15. Test Circuit For Inductive Load
Switching and Diode Recovery
Times
Figure 17. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive Waveform
7/11
4 Package mechanical data
4 Package mechanical data
STD16NF06
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
8/11
STD16NF06 4 Package mechanical data
DIM.
B2
C
C2
D
A
A1
A2
B
E
G
H
L2
L4
0.64
5.2
0.45
0.48
MIN.
2.2
0.9
0.03
6
6.4
4.4
9.35
0.6
TO-252 (DPAK) MECHANICAL DATA
mm
TYP.
0.9
5.4
0.6
0.6
MAX.
2.4
MIN.
0.086
1.1
0.035
0.23 0.001
0.025
0.204
0.017
0.019
6.2
6.6
4.6
10.1
0.236
0.252
0.173
0.368
0.8
1 0.023
inch
TYP.
0.031
H
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
L2
DETAIL "A"
D
DETAIL "A"
L4
0068772-B
9/11
5 Revision History
5 Revision History
Date
10-Jan-2006
Revision
1 First release
Description of changes
STD16NF06
10/11
STD16NF06 5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
11/11
