TXDVxx12
12 A high voltage Triacs
Features
■
■
■
■
■
■
On-state current (I
T(RMS)
): 12 A
Max. blocking voltage (V
DRM
/V
RRM
): 1200 V
Gate current (I
GT
): 100 mA
Commutation @ 10 V/µs: up to 42.5 A/ms
Noise immunity: 2 kV/µs
Insulated package:
– 2,500 V rms (UL recognized: E81734).
Description
The TXDVxx12 series uses a high performance alternistor technology.
Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control
(especially for fans).
Table 1.
Device summary
Parameter TXDV812RG
Blocking voltage V
DRM
/V
RRM
On-state current I
T(RMS)
Gate current I
GT
800 V
12 A
100 mA
A2
G
A1
A1
A2
G
TO-220AB insulated
TXDV1212RG
1200 V
January 2012 Doc ID 18272 Rev 2 1/7 www.st.com
7
Characteristics
1 Characteristics
TXDVxx12
Table 2.
Symbol
I
T(RMS)
V
DRM
V
RRM
I
TSM
Absolute maximum ratings (limiting values)
Parameter
On-state rms current (180° conduction angle)
Repetitive peak off-state voltage
Non repetitive surge peak on-state current
TXDV812
TXDV1212 t p
= 2.5 ms t p
= 8.3 ms t p
= 10 ms t p
= 10 ms I
2 t I
2 t value for fusing dI/dt
T stg
T j
V
INS(RMS)
(1)
Critical rate of rise of on-state current
I
G
= 500 mA dI
G
/dt = 1 A/µs
Storage junction temperature range
Operating junction temperature range
Insulation rms voltage
1.
A1, A2, gate terminals to case for 1 minute
F = 50 Hz
T c
= 90 °C
T j
= 125 °C
T j
= 25 °C
Value
12
800
1200
170
125
120
72
100
- 40 to + 150
- 40 to + 125
2500
Unit
A
V
A
A
2
S
A/µs
°C
V
Table 3.
Symbol
Electrical characteristics (T j
= 25 °C, unless otherwise specified)
Value
Test conditions Quadrant
TXDV812 TXDV1212
I
GT
V
GT
V
GD t gt
I-II-III
I
L
I
V
D
= 12 V DC, R
L
= 33 Ω
V
G
D
= V
V
D
= V
DRM
= 1.2 x I
R
DRM
I
G
GT
L
= 3.3 k Ω
= 500 mA dI
G
T j
= 110 °C
/dt = 3 A/µs
I
I
I
H
(1) dV/dt
(1)
(dI/dt)c
(1)
V
TM
(1)
V to
(1)
R d
(1)
DRM
RRM
I
I
T
= 500 mA Gate open
Linear slope up to:
V
D
= 67% V
DRM
Gate open
(dV/dt)c = 10 V/µs
TM
V
= 17 A t
DRM
= V
RRM p
= 380 µs
Threshold voltage
Dynamic resistance
T
T j j
= 125 °C
= 110 °C
T j
= 25 °C
T j
= 110 °C
1.
For either polarity of electrode A
2
voltage with reference to electrode A
1
.
I-II-III
I-II-III
I-II-III
I-III
II
MAX.
MAX.
MIN.
TYP.
TYP.
MAX.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
42.5
2
100
1.5
0.2
2.5
100
200
100
2
1.95
1.21
40
0.01
30
5
Unit mA
V
V
µs mA mA kV/µs
A/ms
V
V m
Ω mA
2/7 Doc ID 18272 Rev 2
TXDVxx12 Characteristics
Table 4.
Symbol
P
G(AV)
P
GM
I
GM
V
GM
Gate characteristics (maximum values)
Parameter
Average gate power dissipation
Peak gate power dissipation
Peak gate current
Peak positive gate voltage
Table 5.
Symbol
Thermal resistance
Parameter
R th(j-a)
Junction to ambient
R th(j-c)
DC Junction to case for DC
R th(j-c)
AC Junction to case for 360 °Conduction angle (F = 50 Hz) t p
= 20 µs t p
= 20 µs t p
= 20 µs
Value
1
10
4
16
Value
60
2.5
1.9
Figure 1.
Max. rms power dissipation versus on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
Figure 2.
Max. rms power dissipation and max. allowable temperatures
(T amb
and T case
) for various R th
T case
(° C)
20
P(W)
18
16
14
12
10
8
6
4
2
0
0 1
α
= 30°
2 3
α = 60°
4
I
T(RMS)
(A)
5
α
= 90°
6 7
α
= 120°
8
α
= 180°
9
α
10 11 12
P(W)
20
18
16
14
12
10
8
6
4
2
0
0 20 40
T amb
(° C)
60 80 100
R th case to ambient
1° C/W
2° C/W
4° C/W
120
-
90
95
-
100
-
105
-
110
-
115
-
120
140
-
125
Unit
W
W
A
V
Unit
°C/W
°C/W
°C/W
Figure 3.
On-state rms current versus case temperature
14
I
T(RMS)
(A)
12
10
8
6
α = 180°
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 4.
Relative variation of thermal impedance versus pulse duration
1
Z /R th
0.1
0.01
1E-3 1E-2
Z th(j-c)
1E-1
Z th(j-a)
1E+0 1E+1 1E+2 5E+2
Doc ID 18272 Rev 2 3/7
Characteristics TXDVxx12
Figure 5.
Relative variation of gate trigger current and holding current versus junction temperature
Figure 6.
Non repetitive surge peak on-state current versus number of cycles
2.5
I
GT
[T ]
I
GT
[T =25°C]
.
120
I
TSM
(A)
2.0
100 t = 20 ms
One cycle
80
1.5
I
GT 60
I
H
1.0
40
0.5
20
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110
0
0
Number of cycles
10 100 1000
Figure 7.
Non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding values of I
2 t
Figure 8.
On-state characteristics (maximum values)
2 2
I
TSM
(A), I t (A s)
1000
I
TM
(A)
T max.:
V =1.21V
R =0.040
Ω
I
TSM
100
T j initial = 25° C
100
10
1
1 2 3
V
TM
(V)
4 5 6
10
1 2 5 10
Figure 9.
Safe turn-off operating area
1000
(dV/dt)c(V/µs)
T j
= 110° C
100
10
1
1
(dI/dt)c(A/ms)
10 100
4/7 Doc ID 18272 Rev 2
TXDVxx12 Package information
●
●
●
Epoxy meets UL94,V0
Cooling method: C (by conduction)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Table 6.
I4 l3 l2
TO-220AB insulated dimensions e
B
Ø I b1 a1
L
A a2 b2
C c2
M c1
F
Dimensions
Millimeters Inches Ref.
Min.
Typ.
Max.
Min.
Typ.
Max.
A 15.20
a1 a2 13.00
3.75
B 10.00
b1 b2
C
0.61
1.23
4.40
c1 0.49
c2 2.40
e 2.40
15.90 0.598
14.00 0.511
10.40 0.393
0.88
0.024
1.32
0.048
4.60
0.173
0.70
2.72
2.70
0.019
0.094
0.094
0.147
0.625
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
F 6.20
ØI 3.75
6.60
3.85
0.244
0.147
0.259
0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65
l2 1.14
l3
M
1.14
2.60
2.95
1.70
0.104
0.044
1.70
0.044
0.102
0.116
0.066
0.066
Doc ID 18272 Rev 2 5/7
Ordering information TXDVxx12
Table 7.
Ordering information
Order code Marking
TXDV812RG
TXDV1212RG
TXDV812
TXDV1212
Package
TO-220AB insulated
Weight Base qty Delivery mode
2.3 g 50 Tube
Table 8.
Date
Document revision history
30-Mar-2011
13-Jan-2012
Revision
1
2
Changes
Initial release.
Updated dI/dt in
Table 2 , and added V
to
and R d
in
Table 3
6/7 Doc ID 18272 Rev 2
TXDVxx12
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Doc ID 18272 Rev 2 7/7
