®
TYN606
TYN1006
6A SCR
S
STANDARD
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
6
600 and 1000
15
Unit
A
V mA
A
G
K
A
DESCRIPTION
The TYN606 and TYN1006 family of Silicon
Controlled Rectifiers are high performance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
K
A
G
TO-220AB
Table 2: Order Codes
Part Numbers
TYN606RG
TYN1006RG
Marking
TYN606
TYN1006
I
GM
P
G(AV)
P
GM
V
DRM
V
RRM
T stg
T j
T
L
Table 3: Absolute Ratings (limiting values)
Symbol Parameter
I
T(RMS)
RMS on-state current (180° conduction angle)
IT
(AV)
I
TSM
I ² t dI/dt
T c
= 110°C
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
T c
= 110°C t p
= 8.3 ms t p
= 10 ms
T j
= 25°C t p
= 10 ms T j
= 25°C
I ² t Value for fusing
Critical rate of rise of on-state current
I
G
= 100 mA , dI
G
/dt = 0.1 A/µs
T j
= 125°C
Peak gate current
Average gate power dissipation
Maximum gate power
Repetitive peak off-state voltage
Storage junction temperature range
Operating junction temperature range t p
= 20 µs T j
= 125°C
T j
= 125°C t p
= 20 µs T j
= 125°C
TYN606
T j
= 125°C
TYN1006
Maximum lead temperature for soldering during 10s at 2mm from case
Value
6
3.8
73
70
24.5
50
Unit
A
A
A
4
1
10
600
1000
- 40 to + 150
- 40 to + 125
260
A 2S
A/µs
A
W
W
V
°C
°C
February 2006 REV. 2 1/6
TYN606 / TYN1006
Tables 4: Electrical Characteristics (T j
= 25°C, unless otherwise specified)
Symbol Test Conditions
I
GT
V
GT
V
GD t gt
I
H
I
L
I
I
V
D
V
D
= 12 V (D.C.) R
V
D
= V
DRM
T
G
= V
DRM
R
L
L
= 33
= 3.3 k Ω
I
G
= 40 mA dI
G
= 100 mA Gate open
= 1.2 x I
GT
Ω
/dt = 0.5 A/µs
T j
= 110°C
MAX.
MAX.
MIN.
TYP.
MAX.
TYP.
dV/dt
V
TM
Linear slope up to:
V
D
= 67 % V
DRM
Gate open
I
TM
= 12 A tp = 380 µs
T j
= 110°C MIN.
MAX.
I
I
DRM
RRM
V
DRM
= V
RRM
T j
= 25°C
T j
= 110°C
MAX.
t q
V
D
= 67 % V
DRM
I
TM
= 12 A V
R
= 25 V dI
TM
/dt = 30 A/µs dV
D
/dt = 50 V/µs
T j
= 110°C TYP.
Table 5: Thermal Resistance
Symbol
R th(j-c)
R th(j-a)
Junction to case (D.C.)
Junction to ambient
Parameter
Value
15
1.5
0.2
2
30
50
200
1.6
10
2
70
Value Unit
2.5
°C/W
60 °C/W
V/µs
V
µA mA
Unit mA
V
V
µs mA mA
µs
Figure 1: Maximum average power dissipation versus average on-state current
2
1
0
0.0
5
4
3
7
P(W)
6
α
= 60°
α
= 90°
α
= 30°
α
= 120°
0.5
1.0
1.5
2.0
I
T(AV)
(A)
2.5
α
= 180°
3.0
3.5
DC
360°
4.0
α
4.5
5.0
Figure 2: Correlation between maximum average power dissipation and maximum allowable temperature (T amb
and T lead
)
5
2
1
4
3
0
0
7
P(W)
α
= 180°
6
20 40
T amb
(°C)
60 80 100
T lead
(°C)
120
110
115
120
140
125
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TYN606 / TYN1006
Figure 3: Average on-state current versus case temperature
6
5
4
3
2
7
I
T(AV)
(A)
D.C.
α = 180°
1
0
0 10 20 30 40 50
T case
(°C)
60 70 80 90 100 110 120 130
Figure 4: Relative variation of thermal impedance versus pulse duration
1
K=[Z th(j-c)
/R th(j-c)
]
Z th(j-c)
0.1
0.01
1E-3 1E-2 1E-1
Z th(j-a)
1E+0 1E+1 1E+2 5E+2
Figure 5: Relative variation of gate trigger current versus junction temperature
2.5
I ,I ,I [T ] / I ,I ,I [T =25°C]
2
1.5
1
I GT
I
H
& I
L
0.5
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110
Figure 6: Surge peak on-state current versus number of cycles
80
I
TSM
(A)
70
60
50
40
30
20
10
0
1 10
Number of cycles
100
One cycle
1000
Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t
2 2
I
TSM
(A), I t (A s)
Figure 8: On-state characteristics (maximum values)
100
I
TM
(A)
T j
=max
I TSM
100
10
10
1 2 5 10
1
1 2
V
TM
(V)
3 4
V =1.0V
R =46m Ω
5
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TYN606 / TYN1006
Figure 9: Ordering Information Scheme
TYN 6 06 RG
Standard SCR series
Voltage
6 = 600V
10 = 100V
Current
06 = 6A
Packing mode
RG = Tube
Table 6: Product Selector
Part Numbers
TYN606RG
TYN1006RG
Voltage (xx)
600 V 1000 V
X
X
Figure 10: TO-220AB Package Mechanical Data
I4 l3 l2 e
B
Ø I b1 a1
L
A a2 b2
C c2
M c1
F
Sensitivity
15 mA
15 mA
Package
TO-220AB
TO-220AB
REF.
DIMENSIONS
Millimeters Inches
A a1
Min.
Typ.
Max.
Min.
Typ.
Max.
15.20
3.75
15.90 0.598
0.147
0.625
a2 13.00
B 10.00
b1 0.61
b2 1.23
C 4.40
c1 0.49
c2 2.40
14.00 0.511
10.40 0.393
0.88
0.024
1.32
0.048
4.60
0.173
0.70
0.019
2.72
0.094
e
F
ØI 3.75
3.85
0.147
0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L l2 l3
M
2.40
6.20
2.65
1.14
1.14
2.60
2.70
0.094
6.60
0.244
2.95
1.70
1.70
0.104
0.044
0.044
0.102
0.106
0.259
0.116
0.066
0.066
0.551
0.409
0.034
0.051
0.181
0.027
0.107
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
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TYN606 / TYN1006
Table 7: Ordering Information
Ordering type
TYN606RG
TYN1006RG
Marking
TYN606
TYN1006
Table 8: Revision History
Date
Sep-2001
Revision
1A
13-Feb-2006 2
Package
TO-220AB
Weight
2.3 g
Base qty
50
Delivery mode
Tube
Description of Changes
First issue.
TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.
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TYN606 / TYN1006
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
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