STP200N3LL
Nchannel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code V
DS
R
DS(on) max.
I
D
P
TOT
STP200N3LL 30 V
2.4 mΩ
120 A 176.5 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET with very low R
DS(on)
in all packages.
G(1)
S(3)
Order code
STP200N3LL
AM01475v1_Tab
Table 1: Device summary
Marking Package
200N3LL TO-220
Packing
Tube
July 2016 DocID028758 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STP200N3LL
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
TO-220 type A package information ................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID028758 Rev 2
STP200N3LL
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
(1)
I
D
I
DM
(2)
P
TOT
E
AS
(3)
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T case
= 25 °C (silicon limited)
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Single pulse avalanche energy
Storage temperature range
Operating junction temperature range
Notes:
(1)
Current is limited by package.
(2)
Pulse width is limited by safe operating area.
(3)
starting T j
= 25 °C, I
D
= 68 A
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
30
±20
200
120
120
480
176.5
300
–55 to 175
Unit
V
A
W mJ
°C
Value
0.85
62.5
Unit
°C/W
DocID028758 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
I
DSS
Drain-source breakdown voltage
I
GSS
V
GS(th)
Gate threshold voltage
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 30 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 30 V,
T case
= 125 °C (1)
Gate-body leakage current V
DS
= 0 V, V
GS
= ±20 V
R
DS(on)
Static drain-source onresistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 60 A
V
GS
= 4.5 V, I
D
= 60 A
STP200N3LL
Min. Typ. Max. Unit
30
1
V
1
µA
10
±100 nA
2.5
2.15 2.4
V mΩ
2.5 3.1
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
R
G
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
V
DD
= 15 V, I
D
= 120 A, V
GS
= 4.5 V
(see Figure 14: "Test circuit for gate charge behavior" )
f = 1 MHz, I
D
= 0 A, gate DC bias = 0 V, magnitude of alternative signal = 20 mV
Table 6: Switching times
Test conditions Symbol t t d(on) t t r f d(off)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15 V, I
D
= 60 A R
G
= 4.7 Ω,
V
GS
= 10 V (see Figure 13: "Test circuit for resistive load switching times" and
Figure 18: "Switching time waveform" )
Min. Typ. Max. Unit
- 5200 -
-
-
-
-
-
-
-
-
-
-
640
510
53
13
27
1.1
-
-
-
-
-
-
Min. Typ. Max. Unit
18
183
90
108
-
-
-
- pF nC
Ω ns
4/13 DocID028758 Rev 2
STP200N3LL
Symbol Parameter
V
SD
(1)
Forward on voltage t
Q rr rr
Reverse recovery time
Reverse recovery charge
I
RRM
Reverse recovery current
Table 7: Source-drain diode
Test conditions
V
GS
= 0 V, I
SD
= 60 A
I
SD
= 120 A, di/dt = 100 A/µs,
V
DD
= 24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
Min. Typ. Max. Unit
- 1.1 V
- 35 ns
- 34 nC
- 2 A
DocID028758 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STP200N3LL
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on resistance
6/13 DocID028758 Rev 2
STP200N3LL
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
DocID028758 Rev 2 7/13
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STP200N3LL
Figure 14: Test circuit for gate charge behavior
8/13
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID028758 Rev 2
STP200N3LL
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID028758 Rev 2 9/13
Package information
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
STP200N3LL
10/13 DocID028758 Rev 2
STP200N3LL
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 8: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
Package information
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
Max.
4.60
0.88
1.55
0.70
15.75
DocID028758 Rev 2 11/13
Revision history
5
STP200N3LL
Revision history
Date Revision
Table 9: Document revision history
Changes
14-Dec-2015
27-Jul-2016
1
2
First release.
Document status promoted from preliminary to production data.
Updated Section 2: "Electrical ratings"
and Section 3: "Electrical characteristics" .
Added Section 3.1: "Electrical characteristics (curves)" .
Minor text changes.
12/13 DocID028758 Rev 2
STP200N3LL
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