STD46P4LLF6
Pchannel 40 V, 0.0125 Ω typ., StripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting
Power MOSFET exhibits the lowest R
DS(on)
in all packages.
Table 1: Device summary
Order codes Marking Package Packaging
STD46P4LLF6 46P4LLF6 DPAK
Tape and reel
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
Features
Order codes
STD46P4LLF6
V
DSS
40 V
R
DS(on) max.
0.015 Ω
I
D
46 A
December 2014 DocID025772 Rev 3
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STD46P4LLF6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
3 Electrical characteristics (curves) .................................................. 6
4 Test circuits ..................................................................................... 8
5 Package mechanical data ............................................................... 9
5.1
DPAK (TO-252) rev. Q type A mechanical data .............................. 10
6 Packaging mechanical data .......................................................... 13
7 Revision history ............................................................................ 15
2/16 DocID025772 Rev 3
STD46P4LLF6
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
I
D
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
Drain current (pulsed)
P
TOT
(1)
Total dissipation at T
C
= 25 °C
T stg
Storage temperature
T j
Max. operating junction temperature
Value
40
±20
46
32.5
184
70
-55 to 175
175
Notes:
(1)
Pulse width limited by safe operating area
Symbol
Table 3: Thermal data
Parameter
R thj-case
Thermal resistance junction-case max.
Value
2.14
Unit
°C/W
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
Unit
A
A
W
°C
V
V
A
°C
DocID025772 Rev 3 3/16
Electrical characteristics
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown Voltage
I
D
= 250 µA, V
GS
= 0
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source on-resistance
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 40 V, (V
GS
= 0)
V
DS
= 40 V, Tc = 125 °C
V
GS
= ± 20 V, (V
DS
= 0)
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 23 A
V
GS
= 4.5 V, I
D
=23 A
Table 5: Dynamic
Test conditions
V
DS
= 25 V, f=1 MHz,
V
GS
= 0
V
DD
= 20 V, I
D
= 46 A
V
GS
= 4.5 V
Min. Typ.
40
1
STD46P4LLF6
1
10
±100
2.5
0.0125 0.015
0.017 0.02
Min. Typ.
-
-
3525
344
-
-
-
-
238.5
34
11.3
13.8
Max. Unit
Max. Unit
-
- pF pF
-
-
-
-
V
µA
µA nA
V
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
Ω
Ω pF nC nC nC
4/16 DocID025772 Rev 3
STD46P4LLF6 Electrical characteristics
Symbol t d(on) t r t d(off) t f
Table 6: Switching on/off (inductive load)
Parameter Test conditions Min. Typ. Max. Unit
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
R
G
= 20 V, I
D
= 23 A,
= 4.7 Ω, V
GS
= 10 V
-
-
-
-
49.4
60.6
170
20
-
-
-
- ns ns ns ns
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Reverse recovery time
Table 7: Source-drain diode
Test conditions
I
SD
= 23 A, V
GS
= 0
Q rr
I
RRM
Reverse recovery charge
Reverse recovery current
I
SD
= 46 A, di/dt = 100 A/µs,
V
DD
= 24 V
Min. Typ. Max. Unit
-
- 29
1.1 V ns
- 27.6 nC
- 1.9 A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
DocID025772 Rev 3 5/16
Electrical characteristics (curves)
3 Electrical characteristics (curves)
I D
(A)
Figure 2: Safe operating area
GIPG040920141344LM
100
10
1
0.1
0.01
0.1
Op er ati on
Lim ite
in
th is ar ea
is
DS
(o d b y m ax
R n)
1
Tj=175 °C
Tc=25 °C
Single pulse
10
100 µs
1 ms
10 µs
V
DS
(V)
Figure 4: Output characteristics
STD46P4LLF6
K
Figure 3: Thermal impedance
GIPG0409141609LM
δ=0.5
0.1
0.01
0.05
0.2
0.1
0.02
Single pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1 t p (s)
Figure 5: Transfer characteristics
6/16
Figure 6: Gate charge vs gate-source voltage
GIPG020920141000LM
V GS
(V)
V DD = 20 V
12
I
D
= 10 A
10
8
6
4
2
0
0 20 40 60 80 Q g (nC)
Figure 7: Static drain-source on-resistance
GIPG040920141629LM
R
DS(on)
(m Ω)
V
GS
=10V
14
13.5
13
12.5
12.0
11.5
11.0
0 5 10 15 20 25 30 35 40 45 I D (A)
DocID025772 Rev 3
STD46P4LLF6
Figure 8: Capacitance variation
Electrical characteristics (curves)
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized VBR(DSS) vs temperature
Figure 12: Source-drain diode forward characteristics
DocID025772 Rev 3 7/16
Test circuits
4 Test circuits
Figure 13: Switching times test circuit for resistive load
STD46P4LLF6
Figure 14: Gate charge test circuit
V
DD
12 V 47 k
Ω
100 nF
1 k Ω
V i
≤ V
GS
I
G
= CONST
100 Ω
D.U.T.
2200 μ F
2.7 k
Ω
47 k Ω
1 k Ω
V
G
P
W
Figure 15: Test circuit for inductive load switching and diode recovery times
AM01469v 1
Figure 16: Unclamped inductive load test circuit
8/16
Figure 17: Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
0
Figure 18: Switching time waveform t on t off t d(on) t r t d(off) t f
90%
10% V
DS
V
GS
90%
90%
10%
AM01472v 1
0
10% AM01473v 1
DocID025772 Rev 3
STD46P4LLF6
5
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID025772 Rev 3 9/16
Package mechanical data
5.1 DPAK (TO-252) rev. Q type A mechanical data
Figure 19: DPAK (TO-252) type A drawings
STD46P4LLF6
10/16 DocID025772 Rev 3
STD46P4LLF6
Dim.
E1 e e1
H c2
D
D1
E
A
A1
A2 b b4 c
L
(L1)
L2
L4
R
V2
Package mechanical data
Table 8: DPAK (TO-252) type A mechanical data mm
Typ. Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
5.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.40 6.60
4.70
2.28
4.40
9.35
1.00
0.60
2.80
0.80
4.60
10.10
1.50
0.20
1.00
0° 8°
DocID025772 Rev 3 11/16
Package mechanical data
Figure 20: DPAK (TO-252) type A footprint
STD46P4LLF6
All dimensions are in mm
12/16 DocID025772 Rev 3
STD46P4LLF6
6 Packaging mechanical data
Figure 21: Tape for DPAK (TO-252)
Packaging mechanical data
DocID025772 Rev 3 13/16
Packaging mechanical data
Figure 22: Reel for DPAK (TO-252)
STD46P4LLF6
14/16
Dim.
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
F
K0
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
Min.
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm mm
Dim.
Max. Min.
6.8
10.4
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
D
G
N
T
A
B
C
1.5
12.8
20.2
16.4
50
Base qty.
Bulk qty.
0.35
16.3
2500
2500
Max.
330
13.2
18.4
22.4
DocID025772 Rev 3
STD46P4LLF6
7
Revision history
Revision history
Date Revision
Table 10: Document revision history
Changes
17-Jan-2014
05-Sep-2014
16-Dec-2014
1
2
3
First release
Changed the title.
Updated Section "Features" and Section "Description" .
Updated Table 2: "Absolute maximum ratings"Table 3: "Thermal data" ,
Table 6: "Switching on/off (inductive load)" , Table 7:
"Source-drain diode" .
Document status promoted from preliminary data to production data.
Minor text changes.
DocID025772 Rev 3 15/16
STD46P4LLF6
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16/16 DocID025772 Rev 3
