STL20N6F7
Nchannel 60 V, 0.0046 Ω typ., 20 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
G(4)
1
2
3
4
PowerFLAT™ 3.3x3.3 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 7 6 5
Features
Order code
STL20N6F7
V
DS
60 V
R
DS(on)
max
0.0054 Ω
I
D
20 A
•
Among the lowest R
DS(on)
on the market
•
Excellent figure of merit (FoM)
•
Low C rss
/C iss
ratio for EMI immunity
•
High avalanche ruggedness
Applications
•
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(1, 2, 3)
Order code
STL20N6F7
1 2 3 4
Marking
20N6F
AM15810v1
Table 1: Device summary
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
June 2015 DocID027433 Rev 3
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STL20N6F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics .................................................................... 5
3 Test circuits ..................................................................................... 7
4 Package mechanical data ............................................................... 8
4.1
PowerFLAT 3.3x3.3 package information ......................................... 9
5 Revision history ............................................................................ 12
2/13 DocID027433 Rev 3
STL20N6F7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(1)(2)
I
D
(3)
I
D
(3)
I
DM
(2)(3)
P
TOT
(1)
P
TOT
(3)
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Drain current (continuous) at T pcb
= 25 °C
Drain current (continuous) at T pcb
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Total dissipation at T pcb
= 25 °C
Storage temperature
Operating junction temperature
Notes:
(1)
This value is rated according to R thj-c
.
(2)
Pulse width limited by safe operating area.
(3)
This value is rated according to R thj-pcb
.
Table 3: Thermal data
Parameter Symbol
R
thj-pcb
(1)
R thj-case
Thermal resistance junction-pcb max.
Thermal resistance junction-case max.
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec.
Electrical ratings
Value
20
12
80
78
3
60
± 20
100
61
400
-55 to 150
Unit
A
A
A
W
W
V
V
A
A
A
°C
Value
42.8
1.6
Unit
°C/W
°C/W
DocID027433 Rev 3 3/13
Electrical characteristics
2
4/13
STL20N6F7
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
I
D
= 1 mA, V
GS
= 0 V
V
GS
= 0 V
V
DS
= 60 V
V
GS
= 20 V, V
DS
= 0
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 10 A
Table 5: Dynamic
Test conditions Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 30 V, I
D
= 20 A,
V
GS
= 10 V
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Min.
60
2
Min.
-
-
-
-
-
-
Table 6: Switching times
Test conditions Min.
V
DD
= 30 V, I
D
R
G
= 4.7 Ω, V
= 10 A,
GS
= 10 V
-
-
-
-
Table 7: Source-drain diode
Test conditions Min.
I
SD
= 20 A, V
GS
= 0 -
Symbol Parameter
V
SD
(1)
Forward on voltage t
Q rr rr
Reverse recovery time
Reverse recovery charge
I
RRM
Reverse recovery current
I
D
= 20 A, di/dt = 100 A/µs
V
DD
= 48 V
-
-
-
Typ.
Typ.
1600
880
66
25
7.2
8.1
Max.
1
100
4
0.0046 0.0054
Typ.
15
17.6
24.4
7.8
Typ.
39.6
36
1.8
Max.
-
-
-
-
Max.
1.2
Max.
-
-
-
-
-
-
Unit
V
µA nA
V
Ω
Unit ns ns ns ns
Unit pF pF pF nC nC nC
Unit
V ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027433 Rev 3
STL20N6F7
2.1 Electrical characteristics
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID027433 Rev 3 5/13
Electrical characteristics
Figure 8: Capacitance variations
STL20N6F7
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
6/13 DocID027433 Rev 3
STL20N6F7
3 Test circuits
Figure 13: Switching times test circuit for resistive load
Test circuits
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID027433 Rev 3 7/13
Package mechanical data
4 Package mechanical data
STL20N6F7
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
8/13 DocID027433 Rev 3
STL20N6F7
4.1 PowerFLAT 3.3x3.3 package information
Package mechanical data
Figure 19: PowerFLAT™ 3.3x3.3 HV package outline
BOTTOM VIEW
SIDE VIEW
TOP VIEW
DocID027433 Rev 3
8465286_ A
9/13
Package mechanical data
Dim.
L
L1
L2
ϑ
E1
E2
H
K
D1
D2 e
E
A b c
D
Table 8: PowerFLAT™ 3.3x3.3 HV package mechanical data mm
Min. Typ.
2.90
1.60
0.25
0.65
030
0.05
0.70
0.25
0.14
3.10
3.05
2.15
0.55
3.10
3.00
1.70
0.40
0.75
0.45
0.15
0.80
0.30
0.15
3.30
3.15
2.25
0.65
3.30
8° 10°
STL20N6F7
Max.
3.10
1.80
0.55
0.85
0.60
0.25
0.5
12°
0.90
0.39
0.20
3.50
3.25
2.35
0.75
3.50
10/13 DocID027433 Rev 3
STL20N6F7 Package mechanical data
Figure 20: PowerFLAT™ 3.3x3.3 HV recommended footprint
8465286_footprint
DocID027433 Rev 3 11/13
Revision history
5 Revision history
Date Revision
Table 9: Document revision history
Changes
28-Jan-2015
03-Feb-2015
10-Jun-2015
1
2
3
First release.
Updated Table 2: "Absolute maximum ratings"
In Section 2 Electrical characteristics:
- updated Table 5: Dynamic
- updated Table 6: Switching times
- updated Table 7: Source-drain diode
Added Section 2.1 Electrical characteristics (curves)
STL20N6F7
12/13 DocID027433 Rev 3
STL20N6F7
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DocID027433 Rev 3 13/13
